- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Effects of Proton Radiation-Induced Defects on Optoelectronic Properties of MoS2
摘要： We report on photoluminescence spectroscopy and transmission electron microscope imaging of suspended and substrate-supported flakes of the 2D semiconductor MoS2 before and after exposure to 100 keV proton radiation with fluences of 6x1013, 6x1014, and 6×1015 p/cm2 and subsequent annealing. An indirect-to-direct band gap transition is observed, which is preserved after annealing. This transition is accompanied by an unexpected increase in photoluminescence intensity after radiation exposure of multi-layer samples, which is attributed to higher radiative efficiency of the direct gap transition.
关键词： surface wettability,Transition metal di-chalcalgenide,proton radiation,semiconductor nanostructures
更新于2025-09-23 15:23:52
-
Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location
摘要： We have investigated the displacement damage (DD) effect on the electrical characteristics of ZnO thin film transistors (TFTs) based on its location of origin in the device structure. The area subjected to the maximum proton dose induces a maximum DD effect in that particular location. ZnO TFTs with two different passivation layer thicknesses were prepared to obtain maximum proton dose distribution in either the ZnO channel layer or ZnO/SiO2 interface. The devices were irradiated by a proton beam with an energy 200 keV and 1 × 1014 protons/cm2 fluence. Transport of Ions in Matter (TRIM) simulation, followed by calculation of depth distribution of the nonionizing energy loss (NIEL), illustrated different proton dose distribution profiles and NIEL profiles along the depth of the device for these two types of samples. The sample with the maximum proton dose peaks at the ZnO/SiO2 interface exhibited a significant degradation in device electrical characteristics as compared to the negligible degradation of the sample when the maximum proton dose was absorbed in the ZnO layer. Therefore, the investigation into the radiation hardness of proton-irradiated ZnO TFTs is non-trivial since the displacement damage induces drastic changes on the device characteristics based on the damage location.
关键词： ZnO,NIEL,Displacement damage,Thin-film transistors,Proton radiation effects
更新于2025-09-23 15:21:01
-
Proton Radiation Hardness of Perovskite Tandem Photovoltaics
摘要： We propose and test monolithic perovskite/CIGS tandem solar cells for readily stowable, ultra-lightweight space photovoltaics. We design operando and ex situ measurements to show that perovskite/CIGS tandem solar cells retain over 85% of their initial power-conversion efficiency after high-energy proton irradiation. While the perovskite sub-cell is unaffected after this bombardment, we identify increased non-radiative recombination in the CIGS bottom cell and nickel-oxide-based recombination layer. By contrast, monolithic perovskite/silicon-heterojunction cells degrade to 1% of their initial efficiency due to radiation-induced defects in silicon.
关键词： Perovskite/SHJ,Proton Radiation Hardness,Space Photovoltaics,Perovskite Tandem Photovoltaics,Perovskite/CIGS
更新于2025-09-23 15:21:01
-
Radiation effects on the performance of flexible perovskite solar cells for space applications
摘要： Solar cells for space applications are required to be tolerant to harsh environmental conditions. Especially, tolerance against radiation and charged particles is mandatory. Here we study the effect of low-energy (<< 1 MeV) proton radiation to evaluate the radiation tolerance of flexible perovskite solar cells (PSCs). Low-energy protons are more likely to be stopped in the shallower regions of solar cells, thereby causing greater performance degradation than high-energy protons. Flexible PSCs with layer sequence PET/ITO/PEDOT:PSS/perovskite/PCBM/BCP/metal were fabricated and were irradiated with 100 keV protons (fluence from ~ 3 × 1010 to ~ 3 × 1012 protons/cm2, equating several years in space). Flexible PSCs exhibited a good radiation tolerance and did not show color center formation, revealing their outstanding resistance against low-energy proton radiation. This can be credited to the combined effect of intrinsically large carrier diffusion length exceeding the thin absorber film thickness and the defect tolerance of perovskite crystals.
关键词： defect tolerance,space applications,radiation tolerance,low-energy proton radiation,flexible perovskite solar cells
更新于2025-09-23 15:19:57
-
Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell
摘要： The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of di?erent ?uences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the e?ect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the e?ect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these e?ects. In our study, we explain fundamentally the causes of the e?ects of the irradiation on the solar cells. Taking into account the empirical formula of di?usion length under the e?ect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then in?uence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion e?ciency). It appears also in this study that, at low ?uence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.
关键词： silicon solar cell,proton radiation,diffusion length,electrical parameters,carrier distribution,junction dynamic velocity
更新于2025-09-16 10:30:52