- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
[NanoScience and Technology] Silicene (Prediction, Synthesis, Application) || Electronic and Topological Properties of Silicene, Germanene and Stanene
摘要： In this chapter, we review the recent progress on electronic and topological properties of monolayer topological insulators including silicene, germanene and stanene. We start with the description of the topological nature of the general Dirac system and then apply it to silicene by introducing the spin and valley degrees of freedom. Based on them, we classify all topological insulators in the general honeycomb system. We discuss topological electronics based on honeycomb systems. We introduce the topological Kirchhoff law, which is a conservation law of topological edge states. Field effect topological transistor is proposed based on the topological edge states. We show that the conductance is quantized even in the presence of random distributed impurities. Monolayer topological insulators will be a key for future topological electronics and spin-valleytronics.
关键词： topological Kirchhoff law,silicene,topological insulators,topological electronics,Dirac system,field effect topological transistor,spin and valley degrees of freedom,stanene,quantized conductance,germanene
更新于2025-09-23 15:21:21
-
Topologically Nontrivial Valley States in Bilayer Graphene Quantum Point Contacts
摘要： We present measurements of quantized conductance in electrostatically induced quantum point contacts in bilayer graphene. The application of a perpendicular magnetic field leads to an intricate pattern of lifted and restored degeneracies with increasing field: at zero magnetic field the degeneracy of quantized one-dimensional subbands is four, because of a twofold spin and a twofold valley degeneracy. By switching on the magnetic field, the valley degeneracy is lifted. Because of the Berry curvature, states from different valleys split linearly in magnetic field. In the quantum Hall regime fourfold degenerate conductance plateaus reemerge. During the adiabatic transition to the quantum Hall regime, levels from one valley shift by two in quantum number with respect to the other valley, forming an interweaving pattern that can be reproduced by numerical calculations.
关键词： quantum point contacts,quantized conductance,valley degeneracy,bilayer graphene,Berry curvature
更新于2025-09-04 15:30:14