- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Quantum Chip with the Optimized Tunnel Structure for Measuring a Charge Qubit Based on a Double Quantum Dot
摘要： A circuit of a measuring chip for determining an arbitrary pure state of a charge qubit is proposed. The strength of the current flowing through a single-electron transistor in the steady-state mode depends on the state of the qubit. To enhance the sensitivity of the transistor, its working part is built from three quantum dots (QDs) with the energy levels forming a symmetric configuration. The parameters of the system are calculated using a microscopic model of two-dimensional QDs. The time dependences of the population of the structure’s states are obtained and the current strength, sensitivity, and measuring contrast as functions of the geometric parameters of the system are determined. The effect of dissipative processes related to the acoustic phonons on the measurements is investigated and the rates of electron relaxation and dephasing in a two-level system are calculated.
关键词： quantum dot,charge qubit,acoustic phonons,single-electron transistor,quantum detector,electron tunneling
更新于2025-09-23 15:21:01
-
Single-Electron Transistor Based on a Linear Structure of Three Electrically and Optically Controlled Tunnel-Coupled Quantum Dots
摘要： A schematic diagram of a single-electron transistor with a sensitive element based on a resonant tunneling nanostructure consisting of three semiconductor quantum dots is discussed. The electron density in the steady (current) mode at the structure’s output is numerically calculated using a model of the incoherent electron transport between the extreme points and metallic reservoir contacts. The dependences of the electron density on time and system parameters are obtained. It is shown that there are sets of parameters that can provide high levels of sensitivity and reliability of the external electric field measurements. An alternative optically controlled transistor circuit is proposed, in which the electron transport through the structure is supported by a resonant laser field.
关键词： electron tunneling,quantum detector,quantum dot,single-electron transistor
更新于2025-09-16 10:30:52