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oe1(光电查) - 科学论文

39 条数据
?? 中文(中国)
  • Polarized THz Emission from In-Plane Dipoles in Monolayer Tungsten Disulfide by Linear and Circular Optical Rectification

    摘要: Recent advances in the development of polarized terahertz (THz) emission from nanomaterials have not only opened up a new “TeraNano” interdiscipline but also provided a new tool for nonlinear optical process research. Herein, THz radiation mechanism of monolayer tungsten disulfide (WS2) is first investigated by both linear and circular polarization laser excitations at room temperature. The results reveal that polarized THz emission is dominated by the optical rectification based on in-plane nonlinear dipoles, which is totally different from that of bulk WS2. The mechanism is verified by the azimuthal angle and pump polarization angle dependence of THz emission in both experiment and theory. Furthermore, controllably elliptically polarized THz emission is observed with the maximum ellipticity of ≈0.52 based on nonresonant nonlinear process under the circularly polarized excitation. A clear understanding of THz radiation mechanism of 2D materials will facilitate further design, optimization, and polarization control of integrable 2D THz optoelectronics.

    关键词: THz radiation,monolayer WS2,in-plane nonlinear dipoles,optical rectification,elliptically polarized THz emission

    更新于2025-09-23 15:23:52

  • Spin Rectification dc Voltage Spectra via Sweeping Frequency

    摘要: A new measurement method of a spin rectification dc voltage spectrum through fixing the magnetic field and sweeping the frequency has been proposed, which is compared to the common method to acquire a typical spectrum via sweeping an external magnetic field. Based on the shortened microstrip fixture, the measurements of rectified dc voltage as a function of frequency have been performed. From the analysis of results of the permalloy (Py) film with various thicknesses, the magnetic parameters are presented. This method can be used in samples with magnetic domains varied with respect to the external magnetic field, such as, stripe domain structures.

    关键词: stripe domain structure,monolayer Py films,frequency-swept,spin rectification effect (SRE)

    更新于2025-09-23 15:23:52

  • Numerical investigation of energy performance and cost analysis of Moroccan’s building smart walls integrating vanadium dioxide

    摘要: Thermochromic materials such as vanadium dioxide (VO2) have the capability to regulate their infrared reflectivity depending on ambient temperature. Such smart materials are attractive for applications like smart windows and smart roofs. In this paper, we investigate numerically the impact of tungsten (W) doped VO2 application as a smart outdoor wall layer on the building energy consumption in the Mediterranean climate. Temperature distributions through wall configurations with and without W doped VO2 were calculated using finite differences method implemented in Matlab environment. Calculations take into consideration dynamic variations of W doped VO2 absorptivity depending on outdoor temperature variations. Decrement factor, time lag, transmission and peak loads of cooling and heating were calculated. Results have shown that the indoor surface temperature is attenuated during summer by 2–3 °C depending on orientation. Cooling energy saving due to the use of W doped VO2 in summer is around 70% monthly which is equivalent to save $21.6/month of electricity invoiced amount. During winter, W doped VO2 maintains the same value of absorptivity as the uninsulated wall. Thus, results show small differences for indoor surface temperature and heating energy consumption. The application of W doped VO2 in intelligent thermal wall insulation offers a real-time dynamic variation of building’s envelope solar absorptivity and makes smart walls concept more feasible.

    关键词: Energy efficiency,Smart wall,Radiative thermal rectification,Thermochromic,Real-time dynamic absorptivity,Vanadium dioxide

    更新于2025-09-23 15:23:52

  • RF Characterization of NiO and TiO <sub/>2</sub> Based Metal-Insulator-Metal (MIM) Diodes on Flexible Substrates

    摘要: This paper presents the fabrication and characterization of metal-insulator-metal (MIM) diodes on flexible substrates for RF and microwave circuit applications. Diodes using two types of insulators, titanium dioxide (TiO2) and nickel oxide (NiO), are investigated. These insulators are obtained using different oxidation techniques, i.e., in-situ oxidation for TiO2 and plasma oxidation for NiO. Asymmetric metal contacts (Ti-TiO2-Pd and Ni-NiO-Mo) are utilized to achieve nonlinear I–V characteristics. The fabricated diodes show strong non-linearity, high current densities, and low turn-ON voltage. The diodes show RF to dc rectification with near-ideal behavior and rectification sensitivity of 22 V/W (18 GHz) and 46 V/W (18 GHz) for TiO2 and NiO, respectively. NiO-based diodes barrier shows higher current density and higher cutoff frequency in comparison with TiO2 as expected diodes due to thinner oxide and lower dielectric constant. The diodes also work well as frequency doublers over a wide frequency range of 1–4 GHz for TiO2 and 2–10 GHz for NiO-based diodes. Good dc and RF performance of diodes indicate that good quality oxide can be achieved on plastic substrates and MIM devices can provide a perfect solution for RF and microwave circuits on a flexible substrate.

    关键词: MIM diodes,rectification,Flexible electronics,harmonic generation,thin film devices,microwave circuits

    更新于2025-09-23 15:23:52

  • [IEEE IGARSS 2018 - 2018 IEEE International Geoscience and Remote Sensing Symposium - Valencia (2018.7.22-2018.7.27)] IGARSS 2018 - 2018 IEEE International Geoscience and Remote Sensing Symposium - A Novel Fine Registration Technique for Very High Resolution Remote Sensing Images

    摘要: This paper presents a novel registration noise (RN) estimation technique for fine registration of very high resolution (VHR) images. This is accomplished by using a two-step strategy to estimate and mitigate residual local misalignments in standardly registered VHR images. The first step takes advantages of the superpixel segmentation and frequency filtering to generate sparse superpixels as the basic objects for RN estimation. Then local rectification is employed for fine registration of the input image under the aid of RN information. More factors are taken into consideration in order to enhance the RN estimation performance. The proposed approach is designed in a fine registration strategy, which can effectively improve the pre-registration result. The experimental results obtained with real datasets confirm the effectiveness of the proposed method.

    关键词: local rectification,superpixel segmentation,Fine registration,VHR image,sparse representation

    更新于2025-09-23 15:22:29

  • Automatic Rectification of the Hybrid Stereo Vision System

    摘要: By combining the advantages of 360-degree field of view cameras and the high resolution of conventional cameras, the hybrid stereo vision system could be widely used in surveillance. As the relative position of the two cameras is not constant over time, its automatic rectification is highly desirable when adopting a hybrid stereo vision system for practical use. In this work, we provide a method for rectifying the dynamic hybrid stereo vision system automatically. A perspective projection model is proposed to reduce the computation complexity of the hybrid stereoscopic 3D reconstruction. The rectification transformation is calculated by solving a nonlinear constrained optimization problem for a given set of corresponding point pairs. The experimental results demonstrate the accuracy and effectiveness of the proposed method.

    关键词: projection model,hybrid stereo vision,automatic rectification

    更新于2025-09-23 15:22:29

  • Doping-induced giant rectification and negative differential conductance (NDC) behaviors in zigzag graphene nano-ribbon junction

    摘要: By p-type and n-type doping on the electrode edges of V-notched zigzag graphene nano-ribbons (ZGNRs), four V-notched ZGNR-based PN-junctions are designed theoretically. The electronic transport properties of the doped and un-doped V-notched ZGNRs are studied applying non-equilibrium Green’s function method combined with the density functional theory. The numerical results show that, the doped systems are less conductive than the un-doped system, because after doping the transition states become localized. To our surprise, the ZGNR-based PN-junctions do not show obvious rectification by purely doping the boron atoms and nitrogen atoms on the edges of two ZGNR electrodes respectively. However, after hydrogenated the doped boron atoms and nitrogen atoms, the ZGNR systems present giant rectifications with the maximum rectification ratios up to 106 ~ 107, which attributed to the vanishing of overlap between left-electrode sub-band and right-electrode sub-band in the negative bias regime after the doped boron and nitrogen atoms being hydrogenated. Due to the same reason, the hydrogenated doping systems also show large negative differential conductance behaviors.

    关键词: Giant rectification,Negative differential conductance,Graphene nano-ribbon junction,Boron and nitrogen doping

    更新于2025-09-23 15:22:29

  • Quantum-dot circuit-QED thermoelectric diodes and transistors

    摘要: Recent breakthroughs in quantum-dot circuit-quantum-electrodynamics systems are promising both from fundamental perspectives and from the point of view of quantum photonic devices. However, understanding such setups as potential thermoelectric devices has been missing. In this paper, via the Keldysh nonequilibrium Green’s function approach, we show that cavity-coupled double quantum-dots can serve as excellent quantum thermoelectric diodes and transistors. Using an enhanced perturbation approach based on the exact polaron transformation, we find dependencies of thermoelectric transport properties on the electron-photon interaction beyond the predictions from the conventional second-order perturbation theory. In particular, strong light-matter interaction leads to pronounced rectification effects for both charge and heat, as well as thermal transistor effects in the linear transport regime, which opens up a cutting-edge frontier for quantum thermoelectric devices.

    关键词: rectification,light-matter interaction,circuit-QED,diode,transistor,thermoelectric,thermal transistor,quantum-dot

    更新于2025-09-23 15:22:29

  • Current Rectification in a Structure: ReSe2/Au Contacts on Both Sides of ReSe2

    摘要: Schottky effect of two-dimensional materials is important for nanoscale electrics. A ReSe2 flake is transferred to be suspended between an Au sink and an Au nanofilm. This device is initially designed to measure the transport properties of the ReSe2 flake. However, a rectification behavior is observed in the experiment from 273 to 340 K. The rectification coefficient is about 10. The microstructure and elements composition are systematically analyzed. The ReSe2 flake and the Au film are found to be in contact with the Si substrate from the scanning electron microscope image in slant view of 45°. The ReSe2/Si and Si/Au contacts are p-n heterojunction and Schottky contacts. Asymmetry of both contacts results in the rectification behavior. The prediction based on the thermionic emission theory agrees well with experimental data.

    关键词: Two-dimensional materials,Rectification,ReSe2

    更新于2025-09-23 15:22:29

  • High-Performance p-BP/n-PdSe2 Near-Infrared Photodiode with Fast and Gate-Tunable Photoresponse

    摘要: Van der Waals heterostructures composed of transition metal dichalcogenide (TMDs) materials have become a remarkable compact system that could offer an innovative architecture for advanced engineering in high-performance energy-harvesting and optoelectronic devices. Here, we report a novel van der Waals (vdW) TMDs heterojunction photo-diode composed of black phosphorus (p-BP) and palladium diselenide (n-PdSe2) which establish a high and tunable rectification and photoresponsivity. A high rectification up to ≈ 7.1 × 105 is achieved which is successfully tuned by employing the back gate voltage to the heterostructure devices. Besides, the device significantly shows the high and gate-controlled photoresponsivity of ?? = 9.6 × 105 ?? ?? ―1, 4.53 × 105 ???? ―1 and 1.63 × 105 ???? ―1 under the influence of light of different wavelengths (?? = 532, 1064 and 1310 nm) in visible and near-infrared regions respectively due to interlayer optical transition and low Schottky. The device also demonstrates extraordinary values of detectivity (?? = 5.8 × 1013 Jones) and external quantum efficiency (?????? ≈ 9.4 × 106), which are an order of magnitude higher than the currently reported values. The effective enhancement of photovoltaic characteristics in visible and infrared regions of this TMDs heterostructure based system has a huge potential in the field of optoelectronics to realize high-performance infrared photodetectors.

    关键词: rectification,palladium diselenide,detectivity,photoresponsivity,transition metal dichalcogenide materials,near-infrared

    更新于2025-09-23 15:21:01