- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Impact of high resistivity transparent (HRT) layer in cadmium telluride solar cells from numerical simulation
摘要： In this study, Solar Cell Capacitance Simulator (SCAPS-1D) is utilized to examine the properties of cadmium telluride (CdTe) based solar cell. The key aim of this study is to explore the prospects of enhancing the ef?ciency of CdTe solar cells by adding a high resistivity transparent (HRT) layer to the conventional cell structure. For that purpose, novel HRT layer structures are suggested in CdTe solar cells between a cadmium sul?de (CdS) window layer and transparent conductive oxide (TCO) layer. Simulation results presented in this paper are from four proposed structures with three different HRT materials compared to the conventional design. The optimal parameters that offer the optimum functionality of the conventional design (SnO2/CdS/CdTe/MoTe2), with and without the HRT layer, are determined. Obtained results validate an enhancement in ef?ciency of the solar cell with Zn2SO4 as the HRT layer due to lower recombination loss and barrier height at the back contact region. The suggested cell with Zn2SO4 demonstrates an ef?ciency of 17.61% (Voc ? 0.92 V, Jsc ? 25.41 mA/cm2, FF ? 75.35), with only 20 nm HRT layer and 25 nm CdS as a window layer. In the meantime, the reference cell (no HRT layer) depicts an ef?ciency of 17.01% with 4000 nm thick CdTe as an absorber layer. However, the normalized ef?ciency of the suggested cells decreases linearly with increased temperature.
关键词： SCAPS-1D,solar cells,cadmium telluride,high resistivity transparent layer,numerical simulation
更新于2025-09-23 15:21:01
-
An investigation on determinants of silver paste metallization contact performance on crystalline silicon solar cells
摘要： Since the application of silver (Ag) electrodes is of vital importance to the power output of crystalline silicon (c-Si) solar cells, the factors affecting Ag paste metallization contact performance on Si wafers need to get well understood. Herein, the correlation of Ag/Si contact resistivity and glasses used in Ag paste was studied comprehensively. Here taken for exemplification are three types of glass samples used in Ag paste, because the application of them can result in obvious differences in the contact interface characteristics as well as in the contact resistivity. It was found that the factors affecting contact resistivity include the formation of Ag colloids in the glass phase, the doping concentration in the contacted Si surface, and the fixed charge density and defect states density at the interface. In terms of these issues, the key functions and mechanisms of glasses used in Ag paste are elucidated, and also their effects on electrical performance of cells are discussed in this article.
关键词： glass frit,metallization contact,contact resistivity,crystalline silicon solar cells,silver paste
更新于2025-09-23 15:21:01
-
Optical and Electrical Performance of ZnO Films Textured by Chemical Etching
摘要： Zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering on the glass substrate as transparent conductive oxide films. For silicon solar cells, a proper surface texture is essential to introduce light scattering and subsequent light trapping to enhance the current generation. In this study, the magnetron-sputtered ZnO films were textured by wet-chemical etching in diluted hydrochloric acid (HCl) for better light scattering. The diffuse transmittance of the surface textured ZnO films was measured to evaluate the light scattering. The influence of hydrochloric acid concentration on the morphology, optical and electrical properties of the surface-textured ZnO film was investigated. The ZnO film etched in 0.05M HCl solution for 30 s exhibited average diffuse transmittance in the visible wavelength range of 9.52 % and good resistivity of 1.10 x 10-3 Ω·cm while the as-deposited ZnO film had average diffuse transmittance of 0.51 % and relatively high resistivity of 5.84 x 10-2 Ω·cm. Experimental results illustrated that the optical and electrical performance of ZnO films can be significantly improved by introducing the surface texture through the wet-chemical etching process.
关键词： surface texture,light scattering,diffuse transmittance,resistivity,zinc oxide
更新于2025-09-23 15:21:01
-
All-Room-Temperature Processed 17.25%-Crystalline Silicon Solar Cell
摘要： In creating the next-generation of crystalline silicon (c-Si) solar cells, the goals are to improve energy conversion efficiency and reduce costs. Here, we demonstrate all-room-temperature-processed high-efficiency thin-film/c-Si heterojunction solar cells. Functional thin film multilayers of ITO/Ni/vanadium oxide (VOx) and barium oxide (BaOx)/Al are stacked on the front and rear sides, respectively. The comprehensive analysis revealed Ni and BaOx interlayers facilitated the selective collection of charge carriers. With the MgF2 antireflection layer, the efficiency of 17.25% was achieved, suggesting a strategy for the room-temperature fabrication of high-efficiency c-Si solar cells.
关键词： Si solar cells,Room-temperature,Vanadium oxide,Contact resistivity,Barium oxide
更新于2025-09-23 15:19:57
-
Band structure controlled solid solution of spray deposited Cd1-x ZnxS films: Investigation on photoluminescence and photo response properties
摘要： Nano crystalline Cd1-xZnxS (x=0.00-1.00 at. %) films were deposited on glass substrates through conventional chemical spray pyrolysis method at different temperatures. The films with x< 0.70 have exhibited hexagonal phase beyond which cubic phase was noticed. The shifting of XRD peaks with higher Zn content, confirmed the formation of Cd1-xZnxS solid solutions. The film crystallinity improved at higher deposition temperatures, while it decreased with increasing x. SEM images showed nearly spherical granular shapes for x=0, which gradually deteriorate in size at higher x and changed to fibrous structure for x>0.60. Further the films with x=0.40-0.60 seem to be porous and well-suited for gas sensing applications. The EDS confirmed the presence of Cd, Zn and S with expected stoichiometry. The optical transmittance and the energy band gap increased with increasing temperature and x. The shift of absorption edge to the shorter wavelength with Zn content has made film high transparent in blue region. The extinction coefficient reduced with x and Urbach energy has shown the formation of defects. Photoluminescence spectra exhibited broad emission bands which could be deconvoluted to multiple peaks attributable to defect states. The film resistivity increased with x that resulted in decrease of carrier concentration which was determined through Hall Effect measurements. The crystallinity was found to influence the photo-response of the films. The films with high Cd contents showed excellent photo response which can be used as photo-detector due to its rapid decline of resistance in the band edge region. The smaller grain and fibrous structured films with large open surface area obtained here, can be used in gas sensing while, the films with x>0.60 are well-suited for the fabrication of window layers of solar cells.
关键词： structure properties,CdZnS thin films,photo response,optical properties,resistivity,photoluminescence
更新于2025-09-23 15:19:57
-
Structural, electrical and mechanical properties of ВС films prepared by pulsed laser deposition from mixed and dual boron-diamond/graphite targets
摘要： Relatively low and high deposition rates of BCх films were realized by pulsed laser ablation of mixed B–diamond and dual B–graphite targets, respectively. Deposition was performed at 500 °C and the rate of film deposition was determined with respect to the number of atomic monolayers (obviously less or more than one monolayer) grown for one laser pulse. In the case of BCх films formation with a low deposition rate, doping with B facilitated the growth of the nanocomposite structure, which possessed an increased fraction of sp3 bonds, a very low electrical resistance, and an improved mechanical performance. The change of the sheet resistance of these films as the temperature was reduced from 300 to 65 K had a metallic character. For about 95-nm-thick films with bulk compositions of BC1.7 and BC0.6, the resistivity at room temperature were approximately equal to 1.5 mΩ·cm, and the lowest resistivity of 0.23 mΩ·cm was detected for B-enriched film at 85 K. With an increase in the B atom concentration in such films, the charge carrier (holes) concentration decreased, and their mobility increased from 180 to 10,500 cm2·V?1·s?1 due to samples cooling. The application of a higher deposition rate from the dual B–graphite target activated surface migration of condensed atoms, which caused the development of granular morphology, the B segregation and the reduction of the sp3 bond fraction. The hardness and electrical conductivity of such films were obviously inferior to those of the films obtained by PLD with a low deposition rate.
关键词： Hardness,Thin films,Resistivity,Pulsed laser deposition,Boron,Diamond-like carbon
更新于2025-09-19 17:15:36
-
A study of azimuthal electromagnetic wave LWD based on self-adaptive hp finite element method
摘要： Azimuthal electromagnetic wave logging-while-drilling (LWD) technology can detect weak electromagnetic wave signal and realize real-time resistivity imaging. It has great values to reduce drilling cost and increase drilling rate. In this paper, self-adaptive hp finite element method (FEM) has been used to study the azimuthal resistivity LWD responses in different conditions. Numerical simulation results show that amplitude attenuation and phase shift of directional electromagnetic wave signals are closely related to induced magnetic field and azimuthal angle. The peak value and polarity of geological guidance signals can be used to distinguish reservoir interface and achieve real-time geosteering drilling. Numerical simulation results also show the accuracy of the self-adaptive hp FEM and provide physical interpretation of peak value and polarity of the geological guidance signals.
关键词： resistivity,Azimuthal electromagnetic wave,finite element,geological guidance
更新于2025-09-19 17:15:36
-
Minority Carrier Lifetime Measurements for Contactless Oxidation Process Characterization and Furnace Profiling
摘要： Contactless minority carrier lifetime (lifetime) measurements by means of microwave detected photoconductivity are employed for oxidation process characterization and furnace profiling. Characterization is performed on oxidized float zone substrates with high resistivity and outstanding bulk quality, suggesting that the measured effective lifetime is strongly dominated by interface recombination and therefore reflects the oxide quality. The applied approach requires neither test structures nor time consuming measurements and is therefore of particular interest if high throughput is required. The method is used to investigate the impact of oxidation furnace leakage as well as to analyze the oxidation homogeneity across a horizontal oxidation furnace. For comparison, capacitance-voltage measurements are conducted to characterize the oxide properties. It is found that any type of furnace leakage, which induces fixed oxide charges as well as interface states, has a heavy impact on the measured effective lifetime, especially on the shape of generation rate dependent lifetime curves. Furthermore, a distinct lifetime decrease towards the tube door of the oxidation furnace could be observed. The latter is even detectable in an ideal oxidation process, generating high quality oxides. Besides plain equipment characterization, the presented approach is suitable to optimize the oxidation process itself regarding different parameters like temperature, gas flow, pressure, or process time.
关键词： oxide characterization,float zone,lifetime,high-resistivity,furnace profiling
更新于2025-09-19 17:15:36
-
Evidence of Low Temperature Joints in Silver Nanowire Based Transparent Conducting Layers for Solar cells
摘要： The primary stage of joint formation of silver nanowires (AgNWs) at 60 °C is investigated using rotary scanning transmission electron microscopy (STEM with tomographic reconstruction images), and super large-scale molecular dynamic (MD) simulation (2×106 atoms). This study proves to establish that silver nanowires do not require the conventional high temperature post treatment process at 200 °C to form fused contacts at the intersections. In fact, a low temperature annealing at 60 °C facilitates formation of highly conductive networks. The connection between the nanowires is made through a stage called thinning, shown in this report for the first time, which occurs before broadening of the nanowires and is caused due to simultaneous effects of loads from the top nanowires and the heating, as confirmed by STEM and MD result. The outcomes of our investigation significantly promote the application of AgNWs as a transparent conductive layer for solar cells with requirement of low temperature processing such as Kasterite, Perovskite and Organic solar cells.
关键词： Low temperature process,Scanning transmission electron microscopy,Molecular dynamic simulation,Junction resistivity,Transparent conductive layer,Silver nanowire
更新于2025-09-19 17:13:59
-
Nearly Epitaxial Low-Resistive Co Germanide Formed by Atomic Layer Deposited Cobalt and Laser Thermal Annealing
摘要： With ALD-Co on n+-Ge (ND of 2×1019 cm-3) as the platform, annealing schemes including rapid thermal annealing (RTA) and laser thermal annealing (LTA) were employed to study its impact on the characteristics of CoGe2. CoGe2 formed by LTA shows no agglomeration and a low ρc of 1.3×10-8 Ω-cm2 which is reduced by 54 % as compared to the counterpart RTA. In addition, a uniform and atomically smooth CoGe2 with nearly epitaxial crystal structure is also achieved by LTA. Furthermore, LTA-formed CoGe2 does not require any barrier layer during formation which is in stark difference to other germanides and would greatly improve line resistance of the ever scaled contact trench. The promising results mainly stem from the low thermal budget with significant thermal gradient/shallow heat distribution of LTA that effectively limits excess surface Co diffusion and grooving effect, proving the high contact performance enabler beyond 5 nm node.
关键词： smooth interface,cobalt germanide,laser thermal annealing,contact resistivity,barrier,epitaxial crystal structure
更新于2025-09-16 10:30:52