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Improving carrier transport in strontium-doped cuprous oxide thin films prepared by Nebulizer spray pyrolysis for solar cell applications
摘要： Strontium-doped Cu2O thin ?lms of different doping concentrations (0, 3, 5 and 7%) are deposited successfully with the help of Nebulizer spray technique. All the samples were characterized by XRD, AFM, Raman, UV–Vis, photoluminescence and Hall effect, and solar cell ef?ciency is calculated. From the XRD studies, the cubic structural phase of Cu2O is con?rmed. The micrographs of AFM explain that the particles were uniformly distributed on the surface with homogeneous grains. The band gap value ranges from 2.17 to 1.95 eV as the doping concentration increases from 0 to 7%. The PL emission at * 630 nm also con?rms the cuprous oxide phase. The deposited ?lm exhibits p-type conductivity with low resistivity of 0.90 9 102 X cm and high carrier concentration of 22.7 9 1015 cm-3. A heterojunction solar cell of FTO/n-ZnO/p-Sr-doped Cu2O is fabricated, and the power conversion ef?ciency (g) is 0.75% for 7% Sr-doped ?lm.
关键词： Strontium-doped Cu2O,Resistivity and heterojunction solar cell,AFM,Optical studies,Raman
更新于2025-09-16 10:30:52
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Contributions to the Contact Resistivity in Fired Tunnel-Oxide Passivating Contacts for Crystalline Silicon Solar Cells
摘要： In this article, we investigate the contact resistivity of p-type passivating contacts for silicon solar cells. Our contact structures are compatible with firing, a rapid annealing process similar to the one used for sintering of the screen-printed metallization in solar cell manufacturing. We find that the short firing process crystallizes the doped layers and incorporates active boron dopants up to the solubility concentration at the chosen firing temperature. The dependence of our contact resistivities on carrier density and temperature suggest that the hole transport is a combination of tunneling through the oxide at the wafer surface and of thermionic field emission over the Schottky barrier to the metallization. For ideal firing conditions, we find implied open-circuit voltages up to 720 mV and contact resistivities as low as 15 m·Ω·cm2.
关键词： silicon solar cell,passivating contact,Contact resistivity
更新于2025-09-16 10:30:52
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Performance of polycrystalline GaN based metal-semiconductor-metal (MSM) photodetector with different contact
摘要： This paper describes performance of polycrystalline GaN based metal-semiconductor-metal (MSM) photodetector using different contact; Al, ITO, Ni and Pt. The performance of each photodetector was investigated in term of electrical resistivity (r ), signal-to-noise ratio (SNR), responsivity (R), internal quantum efficiency (η) and temporal responsivity. From the results, Ni is suggested to be a good contact for the photodetector. This is due to diffusion of NixO, formed by residual oxides on the GaN layer, into the Ni contact reduced the resistivity, thereby increasing the electrical conductivity of the photodetector. The photodetector with Ni contact demonstrated significant increase in SNR behavior with increasing bias voltage, while its r value was measured to be 2.02 M?.cm2, and η was 3.13%, 2.36% and 1.52%, at λ = 342 nm, 385 nm and 416 nm, respectively. From the temporal responsivity measurement, the rise time = 1.75 sec, the recovery time = 1.87 sec and the sensitivity = 5840%.
关键词： MSM photodetector,electrical contact,resistivity,internal quantum efficiency and temporal responsivity,signal-to-noise ratio,polycrystalline GaN,responsivity
更新于2025-09-12 10:27:22
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Nondestructive Contact Resistivity Measurements on Solar Cells Using the Circular Transmission Line Method
摘要： The contact resistivity (ρc) of screen-printed contacts is a significant component of series resistance in industrial solar cells. Measuring ρc with standard techniques, such as the transmission line method (TLM), requires that the custom printed test structures be isolated from the device. In this article, we present a method for measuring ρc on solar cells using the circular TLM (cTLM), where the test structures are hidden within the busbars of the solar cell. This alleviates the need for the test structure to be isolated from the device, allowing for the fast and nondestructive measurement of ρc without causing additional shading on the cell. These measurements are performed with a semiautomatic tool, the ContactSpot-PRO, used for the accurate and systematic measurement of the ρc on the cTLM structures. Our results show that the cTLM technique compares well to the linear TLM technique on several samples fired through a range of temperatures. However, numerical models generated using Quokka3 and scanning electron microscopy images indicate that structural differences in screen-printed TLM and cTLM structures affect the actual contact resistivity of each pattern. The numerical models also show how nonuniform sheet resistance beneath and in-between the printed contacts can affect the measured ρc when using both the TLM and cTLM.
关键词： screen-printed contacts,circular transmission line method,nondestructive measurement,contact resistivity,solar cells
更新于2025-09-11 14:15:04
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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Femtosecond Laser Processing and Evaluation of Broadband THz Anti-Reflection Structures
摘要： We fabricate terahertz anti-reflection structures on the surface of high-resistivity silicon via femtosecond laser processing. We measure its spectral properties by terahertz time-domain spectroscopy, and find a broadband increase in transmissivity over 0.3 - 2.5 THz. We investigate the observed spectral characteristics of this transmission by using numerical simulation. We successfully reproduce the observed result for all frequencies, including a previously undocumented high-frequency drop-off, when the model includes additional material losses. We believe these effects to be induced by the laser-ablation fabrication process.
关键词： anti-reflection,high-resistivity silicon,femtosecond laser processing,terahertz time-domain spectroscopy,terahertz
更新于2025-09-11 14:15:04
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AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Electrical and optical analysis of a spray coated transparent conductive adhesive for two-terminal silicon based tandem solar cells
摘要： This work presents the results of the electrical and optical characterization of a new transparent conductive adhesive (TCA) that combines the techniques of spray pyrolysis and a sol-gel like process. This approach is of particular interest since the adhesive itself forms both the electrical and the mechanical interconnection of the bonded sub-cells. The electrical and optical characterization of the developed TCA shows a minimum connecting resistivity of 17 ?cm2 and a simulated reflection at the Si-TCA interface of ≈ 20%. By coating both substrate surfaces with a TiO2 anti reflection coating (ARC), the reflectance at the Si-TCA interface was successfully reduced down to <5%. The efficiency potential of a glued dual junction device was simulated in dependence of the electrical and optical properties of the TCA. The reported values of 17 ?cm2 connecting resistivity and 20% reflection limit the device efficiency to 22.3% (71% of the maximum achievable efficiency). Reducing the reflection to below 5%, as practically demonstrated in this paper, allows to increase this value to 25.3% (>80% of maximum), while additionally reducing the connecting resistivity to 10 ?cm2 or 1 ?cm2 allows for a further increase to 27.3% and 30.0%, respectively.
关键词： reflection losses,sol-gel process,tandem solar cells,connecting resistivity,TiO2 anti reflection coating,electrical characterization,transparent conductive adhesive,optical characterization,spray pyrolysis
更新于2025-09-11 14:15:04
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The operation of THz quantum cascade laser in the region of negative differential resistance
摘要： We investigate the light-current-voltage characteristics and emission spectra of 2.3 THz quantum cascade laser operating in the negative differential resistance (NDR) region. It was shown that the formation of electric ?eld domains (EFDs) leads to a large number of discontinuities on the current-voltage and the total optical power on current characteristics. Measurements of emission spectra at different current (before the NDR region and in the NDR region) shows that the formation of EFDs results in decrease of the output intensity, but does not in?uence on lasing frequencies. The performed calculations qualitatively explain the experimental results.
关键词： THz region,Resonant-phonon design,Quantum-cascade laser,Negative differential resistivity
更新于2025-09-11 14:15:04
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AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Excess charge carrier injection densities in PERC solar cells at open-circuit voltage and maximum power point
摘要： Nowadays passivated emitter and rear contact (PERC) solar cells are mainstream cell technology. An accurate knowledge of the excess charge carrier injection density during illumination will help to understand the kinetic behavior of charge carrier sensitive defects such as boron-oxygen related defect, LeTID defect or FeB pair dissociation and thus supports reliability improvements of PERC cells. However, the excess charge carrier injection density is not easily accessible in experiments. The aim of our research is to investigate the distribution of the injection density in PERC cells in the range of 22% to 24% efficiency. Thus, we perform a numerically simulated Design of Experiment varying the base resistivity and the location of recombination to derive the excess charge carrier injection density. However, no relevant combined influences of the location of recombination on the injection density are found. The base averaged excess charge carrier injection density increases with higher PERC efficiencies as well as with higher specific resistivity of the base. For a sufficient description of the injection density at open-circuit condition, the law of mass action under applied voltage considering high-level injection can be used to calculate the injection density. At maximum power point voltage, an effective voltage at the pn-junction is derived considering the voltage drop due to the lumped series resistance. This effective voltage is used to calculate an injection density with the law of mass action considering high level injection.
关键词： base resistivity,recombination,PERC solar cells,maximum power point,open-circuit voltage,excess charge carrier injection density
更新于2025-09-11 14:15:04
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Structural, optical and electrical studies of DC-RF magnetron co-sputtered Cu, In & Ag doped SnS thin films for photovoltaic applications
摘要： This work reports the tuning of optical and electrical properties of SnS through the incorporation of Cu, In and Ag atom without altering its chemical and crystal structural properties, using DC-RF magnetron co-sputtering technique with an in-situ substrate temperature of 400 °C. Doping is increased up to ~10% by varying the DC sputtering voltage as evident from EDAX analysis. Morphological studies show the variation in surface morphology, particle size and surface roughness due to the incorporation of dopant cation into SnS lattice sites. Film with optimized doping of ~5% resulted the substitutional doping of dopant cations (Cu2+, In3+ and Ag2+) into SnS lattice sites which resulted an improved absorption coefficient and hall carrier concentration with a decrease in band gap and electrical resistivity. Hall measurement studies of Cu 4.8% doped SnS film shows the p-type conductivity with lowest electrical resistivity of 90 Ω cm and improved carrier concentration of 1017 cm?3.
关键词： SnS thin films,Optical energy band gap,Co-sputtering,Electrical resistivity,Phase formation
更新于2025-09-11 14:15:04
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Synthesis and characterization of (1??? <i>x</i> )(La <sub/>0.6</sub> Ca <sub/>0.4</sub> MnO <sub/>3</sub> )/ <i>x</i> (Sb <sub/>2</sub> O <sub/>3</sub> ) ceramic composites
摘要： The composites ((1 ? x)(La0.6Ca0.4MnO3)/x(Sb2O3)) (x = 0.00, 0.07 and 0.12) were synthesized by conventional solid-state reaction method. The results of X-ray di?raction (XRD) and SEM indicate that Sb2O3 and LCMO coexist in the composites and Sb2O3 mainly segregates at the grain boundaries of LCMO. Furthermore, the magnetic study shows a typical variation. The resistivity of the composite samples was measured at the applied magnetic ?elds of 0T, 2T and 5T. All the specimens undergo a metallic–semiconductor transition at the temperature Tρ. The temperature dependence of resistivity shows that the transport behavior of the composites is governed by the grain boundaries. It is suggested that the Sb2O3 addition, acts as a separation layer between grains. The ρ-T ?t well with the phenomenological equation for conductivity under a percolation approach. Magnetoresistance (MR) has been found to reach a maximum value with Sb2O3 addition. The magnetocaloric properties of LCMO based on resistivity measurements were investigated. We measure the magnetic entropy change ΔSM from the resistivity which is similar to that calculated from the magnetic measurements. Finally, the TCR curves show good value under zero magnetic ?eld, which makes it a good candidate for bolometer applications.
关键词： MR,Manganite-composite,percolation model,resistivity,TCR
更新于2025-09-10 09:29:36