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Validation of a Terminally Amino Functionalized Tetra-Alkyl Sn(IV) Precursor in Metal-Organic Chemical Vapor Deposition of SnO <sub/>2</sub> Thin Films: Study of Film Growth Characteristics, Optical, and Electrical Properties
摘要： Tin(IV) oxide is a promising semiconductor material with leading-edge properties toward chemical sensing and other applications. For the growth of its thin films, metal–organic chemical vapor deposition (MOCVD) routes are advantageous due to their excellent scalability and potential to tune processing temperatures by careful choice of the reactants. Herein, a new and highly efficient MOCVD process for the deposition of tin(IV) oxide thin films employing a terminally amino alkyl substituted tin(IV) tetra-alkyl compound is reported for the first time. The liquid precursor, tetrakis-[3-(N,N-dimethylamino)propyl] tin(IV), [Sn(DMP)4], is thermally characterized in terms of stability and vapor pressure, yielding highly pure, polycrystalline tin(IV) oxide thin films with tunable structural and morphological features in the presence of oxygen. Detailed X-ray photoelectron spectroscopy (XPS) analysis reveals the presence of oxygen vacancies and high amounts of chemisorbed oxygen species. Based on these promising features, the MOCVD process is optimized toward downscaling the thickness of tin(IV) oxide films from 25 to 50 nm to study the impact of incipient surface morphological changes occurring after initial thin-film formation on the electrical properties as investigated by van der Pauw (vdP) resistivity measurements. Optical bandgaps of thin films with varying thicknesses are estimated using ultraviolet–visible (UV–vis) spectroscopy.
关键词： composition,SnO2,morphology,MOCVD,resistivity
更新于2025-09-10 09:29:36
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Optimization of dispersant-free colloidal ink droplets for inkjet patterning without the coffee-ring effect using 1-octanethiol-coated copper nano-ink with a Standard Clean-1-treated substrate
摘要： Inkjet-printed patterns and droplets were formed by the inkjet printing method on a Standard Clean-1 (SC-1)-treated substrate using anti-oxidized copper nano-ink. The hydrophobicity of the substrate increased after the SC-1 treatment. Copper nanoparticles were coated with 1-octanethiol vapors via a dry coating method to produce anti-oxidized nanoparticles, which were dispersed in a solvent to form a nano-ink. Droplets of the 1-octanethiol-coated copper nano-ink at 50 wt% concentration had a uniform morphology when printed on the SC-1-treated glass substrate. The minimum printed pattern line width was 55 μm on the SC-1-treated glass and had a resistivity of 1.73 × 10–7 ?·m. This resistivity was 4.3-times lower than that of the untreated substrate. Moreover, the pattern printed using the nano-ink made with 1-octanethiol-coated copper nanoparticles showed good adhesion and provided approximately 2.1-times lower resistivity. The dispersion of the nanoparticles within the droplet was more hydrophobic and formed uniform inkjet-printed patterns that had lower resistivity compared with those made with the uncoated nanoparticle-containing ink.
关键词： SC-1 treatment,Coffee-ring effect,1-Octanethiol-coated copper nano-ink,Inkjet printing,Resistivity
更新于2025-09-10 09:29:36
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Characterization of Er-doped AlN films prepared by RF magnetron sputtering
摘要： Er-doped AlN thin film were deposited on sapphire substrates (0001) by RF magnetron sputtering at different sputtering times. The crystalline structure, surface morphology and electrical properties of the thin films have been investigated. The XRD patterns and the SEM sectional diagram indicate that Er-doped AlN thin films presents the preferred orientation of C axis. The crystalline quality of the films rises first and then decreases with the increase of sputtering time and reaches best at 90 minutes. Piezoelectric coefficient d33 indicates maximum value of 9.53pm/V. Correspondingly, the best surface morphology of thin film was obtained at 90 minutes and the surface roughness reached a minimum of 2.012 nm. In addition, the change of resistance is same with change of the crystalline quality and the resistivity reached a maximum of 4.36*1012Ω?cm at 90minutes.
关键词： piezoelectric properties,Er-doped AlN,crystal structure,resistivity,sputtering time,magnetron sputtering
更新于2025-09-10 09:29:36
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Tailoring Physical Properties of Carbon Nanotube Threads During Assembly
摘要： Spinnable carbon nanotubes (CNTs) are useful formats for studying physical properties of CNT fiber assemblies in their pristine states. They are free of catalyst, uniform in length, with a comparatively narrow diameter distribution, and their assembly into thread does not require additional chemicals or solvents. Good quality drawable CNT arrays can be readily assembled into uniform diameter threads with great control over the number of CNTs incorporated into the thread assembly. This uniformity allows study the physical properties that result from changes that occur during thread formation. Here, we report trends of electrical resistivity and mechanical strength that resulted from alterations in their manufacturing parameters, allowing to change intrinsic physical properties of a material such as electrical resistivity. We correlate the electrical resistivity and mechanical strength as a function of diameter, density, and turns/meter. Understanding the effects of dry-spinning parameters will allow a better design of the physical properties of CNT threads for specific applications, such as strain or electrochemical sensors.
关键词： resistivity,threads,and twist angle.,fibers,yarns,Carbon nanotubes,diameter control
更新于2025-09-10 09:29:36
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Enhanced dielectric properties of BaTiO3 ceramics with cerium doping, manganese doping and Ce-Mn co-doping
摘要： Ba1?xCexTi1?yMnyO3 (where x and y varies from 0.00 to 0.03) ceramic samples are synthesized by conventional solid state reaction technique. The samples are sintered at 1473 K for 4 h. The grain size is observed to increase with increasing dopant and co-dopant concentration. The X-ray diffraction confirmed the cubic phase of these BaTiO3-based ceramics with a small amount of secondary phase. The current density shows a nearly linear relationship with voltage, and the AC resistivity of the samples is observed to decrease with increasing frequency and doping concentration. The dielectric constant and dielectric loss were observed to decrease with frequency in the lower frequency range (0.2–10 kHz), but remained almost the same at the high-frequency region (>10 kHz). Though Ce-doped samples shows better dielectric properties than Mn-doped samples, the Ce-Mn co-doped samples, having improved their dielectric properties, can be used to fabricate different optoelectric devices.
关键词： resistivity,SEM,solid state reaction,dielectric properties,XRD,grain size
更新于2025-09-09 09:28:46
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Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped <i>n</i> <sup>+</sup> -Ge <sub/> 1? <i>x</i> </sub> Sn <sub/><i>x</i> </sub> structure
摘要： We examined the formation of Ni(Ge1?xSnx)/n+-Ge1?xSnx contacts with Sb- and P-doped Ge1?xSnx epitaxial layers with various electron concentrations and investigated the crystalline structure and contact resistivity. The fully maintained strain and no serious degradation of the crystallinity were confirmed in the Sb-doped Ge1?xSnx layer after Ni stanogermanidation, while the Sn content slightly decreased. The contact resistivity of Ni(Ge1?xSnx)/Sb-doped Ge1?xSnx interface achieved a value lower than the P-doped samples, in spite of high Sn contents with a Ni germanidation temperature of 350 °C. The ultra-low contact resistivity as low as 10?9 Ω cm2 was obtained with the Ni(Ge1?xSnx)/Sb-doped Ge0.935Sn0.065 sample with an electron concentration of 1.8×1020 cm?3.
关键词： contact resistivity,n-type doping,GeSn
更新于2025-09-09 09:28:46
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Self-Assembly Synthesis of Silver Nanowires/Graphene Nanocomposite and Its Effects on the Performance of Electrically Conductive Adhesive
摘要： Among recent advances in electronic packaging technologies, electrically conductive adhesives (ECAs) attract most researchers’ attention, as they are environment-friendly and simple to apply. ECAs also have a lower operating temperature and volume resistivity compared with conventional electronic conductive adhesives. In ECAs, the conducting ?llers play a signi?cant role in improving conductivity and strength. In this work, as ?ller additives, the silver nanowires/ graphene nanocomposites (AgNWs-GNs) were successfully fabricated via a facile self-assembly method. The characteristics of the as-prepared nanocomposites were evaluated by FTIR (Fourier Transform infrared spectroscopy), XRD (X-ray Diffraction), XPS (X-ray photoelectron spectroscopy), TEM (Transmission electron microscope) and Raman tests, demonstrating a successful synthesis process. Different amounts of AgNWs-GNs were used as additives in micron ?ake silver ?ller, and the effects of AgNWs-GNs on the properties of ECAs were studied. The results suggested that the as-synthesized composites can signi?cantly improve the electrical conductivity and shear strength of ECAs. With 0.8% AgNWs/GNs (AgNWs to GO (Graphite oxide) mass ratio is 4:1), the ECAs have the lowest volume resistivity of 9.31 × 10?5 ?·cm (95.4% lower than the blank sample without ?llers), while with 0.6% AgNWs/GNs (AgNWs to GO mass ratio is 6:1), the ECAs reach the highest shear strength of 14.3 MPa (68.2% higher than the blank sample).
关键词： electrically conductive adhesive,volume resistivity,graphene,silver nanowires
更新于2025-09-09 09:28:46
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Nondestructive Testing for Archaeology and Cultural Heritage (A Practical Guide and New Perspectives) || Nondestructive Testing Technologies for Cultural Heritage: Overview
摘要： In this chapter, the most used NDT geophysical technologies applied in the field of preventive archaeology and in the analysis of monumental heritage will be considered. Starting from the current state of the art, we will examine: Ground-Penetrating Radar (GPR), electrical active (Electrical Resistivity Tomography—ERT; induced polarization—IP) and passive (Self-Potential—SP), and seismic sonic an ultrasonic methods. Here some important theoretical aspect will be explained as simply as possible, also using practical examples.
关键词： Monumental Heritage,Preventive Archaeology,Induced Polarization,Electrical Resistivity Tomography,Geophysical Technologies,Seismic Sonic,Self-Potential,Ground-Penetrating Radar,Nondestructive Testing,Ultrasonic Methods
更新于2025-09-09 09:28:46
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Controllable magnetization and resistivity jumps of manganite thin films on BaTiO <sub/>3</sub> substrate
摘要： Manganites thin films grown on ferroelectric BaTiO3 (BTO) exhibit dramatic jumps for both magnetization and resistivity upon cooling in accordance with the temperature-dependent structural transitions of the BTO substrate. Both upward and downward jumps have been reported at the same temperature point where BTO undergoes a structural transition from monoclinic to rhombohedral. Using La5/8Ca3/8MnO3/BaTiO3 as protype system, we solve the puzzle by showing that the direction of the jumps can be controlled by applying an electric field during post growth cooling which determines the orientation of the c-axis of the BTO substrate at room temperature. This offers a convenient way to control the magnetic and transport behavior of manganites films using electric field.
关键词： manganite thin films,resistivity jumps,electric field control,magnetization,BaTiO3 substrate
更新于2025-09-09 09:28:46
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Enhancement of transport properties in single ZnSe nanowire field-effect transistors
摘要： Wide-gap semiconductors are excellent candidates for next-generation optoelectronic devices, including tunable emitters and detectors. ZnSe nanowire-based devices show great promise in blue emission applications, since they can be easily and reproducibly fabricated. However, their utility is limited by deep level defect states that inhibit optoelectronic device performance. The primary objective of this work is to show how the performance of ZnSe nanowire devices improves when nanowires are subjected to a post-growth anneal treatment in a zinc-rich atmosphere. We use low temperature photoluminescence spectroscopy to determine the primary recombination mechanisms and associated defect states. We then characterize the electronic properties of ZnSe nanowire field effect transistors fabricated from both as-grown and Zn-annealed nanowires, and measure an order-of-magnitude improvement to the electrical conductivity and mobility after the annealing treatment. We show that annealing reduces the concentration of zinc vacancies, which are responsible for strong compensation and high amounts of scattering in the as-grown nanowires.
关键词： electrical resistivity,II–VI semiconductors,crystal defects,carrier transport,photoluminescence,carrier mobility,nanowires
更新于2025-09-09 09:28:46