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Numerical Investigation for Scale-Up of an Electron Cyclotron Resonance Plasma for Fluorine-Doped Tin Oxide Thin Film Production
摘要： A low-temperature process is required to deposit ?uorine doped tin oxide (FTO) as a transparent conductive oxide on polyethylene terephthalate (PET) substrate, as the latter is polymeric and has a low melting point. An electron cyclotron resonance (ECR) plasma system is the best way to deposit metal oxide with high transparency and electrical conductivity at temperatures below 100 (cid:2)C. Characteristics of an ECR plasma include its high ionization energy and electron density; however, its use is limited in large-scale deposition. In order to overcome this limitation, a large-scale ECR plasma system with a dual microwave generator was designed by numerical investigation of a laboratory-scale ECR plasma system. FTO ?lms prepared in the laboratory-scale and large-scale systems were compared. The change in electrical resistivity and optical transmittance with deposition pressure in the large-scale ECR plasma system with dual linear microwave generator is similar to that observed in the laboratory-scale ECR plasma system. The velocity distribution of active species near the substrate in the large-scale ECR plasma system showed a very similar pattern to that in the laboratory-scale ECR plasma system over a range of 1.5 × 10?2 to 0.8 × 10?2 m/s. The electrical resistivity and optical transmittance of FTO ?lms deposited by a large-scale ECR plasma system using a dual microwave generator had respective values of 4.3 × 10?3 ～ 9.18 × 10?3 (cid:2) · cm and 86.5～88.2%.
关键词： Dual Microwave,ECR Plasma,Electrical Resistivity,Optical Transmittance,Fluorine-Doped Tin Oxide
更新于2025-09-04 15:30:14
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Formation of silver films for advanced electrical properties by using aerosol deposition process
摘要： A simple room temperature aerosol deposition (AD) process was used to fabricate silver thick films for high efficiency metallization that can be applied to decrease the resistance–capacitance delay and increase the signal propagation speed in integrated circuits. To obtain more advanced performance than aerosol-deposited silver films reported in previous studies, experimental parameters (orifice size of nozzle and gas consumption) that could directly affect electrical resistivity were optimized in advance. The proper small orifice size was selected for facilitated reduction of electrical resistivity by activating the percolation effect and making more conduction channels. High gas consumption also reduced the electrical resistivity of the silver films, forming plenty of metal clusters. Using experimental parameters that showed the lowest resistivity, silver thick films were fabricated via the AD process and their properties were analyzed. The results of the X-ray diffraction confirmed that the silver particles underwent impact-induced plastic deformation. As the film thickness was thickened up to 12 scans, the collided particles filled up the rough alumina substrate. After 12 scans, the silver films became densified due to severe plastic deformation of the as-deposited silver particles. Therefore, the growth mechanism suggests that most silver particles in the initial deposition step contribute to mechanical interlocking, and the subsequent particles could lead to film densification.
关键词： aerosol deposition,electrical resistivity,silver films,metallization,integrated circuits
更新于2025-09-04 15:30:14
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - First Principles Calculations of the Effect of Stress in the I-V Characteristics of the CoSi<inf>2</inf>/Si Interface
摘要： We present ab initio-based electronic transport calculations on the effect of uniaxial and bi-axial stress on the CoSi2/nSi interface resistivity for the three main silicon crystallographic directions. For the [001] case, we identify two distinctive low and high bias conduction regimes for both compressive and tensile stress. In these regimes, the current is dominated by electronic transmission pathways near the Γ point for bias up to ~0.1V, while for higher bias it is dominated by transmission at the (±1/2, ±1/2) conduction band valleys of the Brillouin zone, which results in a contact resistivity decrease of up to 30% at 0.2V bias. This effect is less pronounced for the [110] direction, and negligible for the [111] case due to the symmetry of the Si conduction band valleys along these directions. This study provides insight into stress-based optimization pathways for contact resistivity reduction of silicide interfaces in next generation semiconductor devices.
关键词： silicide,Ab initio,electronic transport,contact resistivity
更新于2025-09-04 15:30:14
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Synthesis of type-II based (1-x)Ba <sub/>0.6</sub> (Ca <sub/>1/2</sub> Sr <sub/>1/2</sub> ) <sub/>0.4</sub> Ti <sub/>0.5</sub> Fe <sub/>0.5</sub> O <sub/>3</sub> +(x)Ni <sub/>0.40</sub> Zn <sub/>0.45</sub> Cu <sub/>0.15</sub> Fe <sub/>1.9</sub> Eu <sub/>0.1</sub> O <sub/>4</sub> composites via standard solid state reaction method and investigation of multiferroic properties
摘要： A series of multiferroic composites, (1-x)Ba0.6(Ca1/2Sr1/2)0.4Ti0.5Fe0.5O3+(x)Ni0.4Zn0.45Cu0.15Fe1.9Eu0.1O4 ((1-x)BCSTFO+(x)NZCFEO) where x = 0.0, 0.1, 0.2, 0.3, 0.4, 0.5, 1.0 have been synthesized by standard double sintering ceramic method sintered for 3 hours at 1200?C in air. The X-ray diffraction patterns reveal that the multiferroics and the parent ceramic samples crystallize in simple cubic structure with a slightly distored lattice parameter. The X-ray and bulk density increase with the increasing ferrite content. Consequently, the porosity decreases indicating better crystallization. A decreasing trend in dielectric constant is observed while the relative quality factor (RQF) increases signi?cantly with the increasing ferromagnetic NZCFEO. At the same time, M–H hysteresis loops reveal that ferromagnetic property enhances with the addition of Ni0.40Zn0.45Cu0.15Fe1.9Eu0.1O4 (NZCFEO). The highest values of coercive ?eld ～ 92 O and saturation magnetization ～1.37 emu/g are observed for x = 10% and x = 50% compositions respectively. Additionally, the permeability enhances up-to x = 30% but decreases with further doping. The room temperature resistivity rises due to the decrease in hopping mechanism. The samples exhibit a decreasing trend for resistivity with the increase of temperature. The dopant concentration has also shown an impressive impact on the activation energy. As a result, the multiferroic properties of (1-x)BCSTFO+(x)NZCFEO have been signi?cantly improved considering the measured magnetic and ferroelectric properties.
关键词： multiferroic composites,resistivity,dielectric constant,permeability,ferromagnetic property
更新于2025-09-04 15:30:14
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Temperature Effect on Optical and Electrical Properties of ZnO Films
摘要： Zinc oxide thin films were deposited on a glass substrate by Radio frequency magnetron sputtering. The effect of substrate temperature on the microstructure, optical and electrical properties was investigated. Crystal structure and surface morphology of the films were examined by X-ray diffraction and atomic force microscopy. XRD patterns and AFM images show that the crystallinity and grain size are increasing with the increase of substrate temperature. Electrical properties of the films were evaluated by Hall effect measurements. Experimental results indicate a decrease of film resistivity with the increase of substrate temperature. Zinc oxide films exhibit high transmittance of 84 % in the visible wavelength range 400-800 nm and is independent on the substrate temperature. Present work shows that the enhancement of the ZnO film performance with high transparency and low resistivity can be achieved by increasing the substrate temperature.
关键词： Resistivity,Zinc oxide film,Transmittance,Substrate temperature
更新于2025-09-04 15:30:14
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CMOS-compatible graphene
摘要： Complementary metal–oxide–semiconductor (CMOS)-based integrated circuits use metal interconnect wires, which are made of aluminium and, more recently, copper, to provide electrical connections between the various circuit components. As technology node scaling has continued to fit more devices per square inch of silicon, interconnect wire cross-sections have needed to shrink, leading to increased resistivity, heating and electromigration issues. Recent investigations into the use of metals with higher melting points than copper, such as cobalt and ruthenium, have shown promising electromigration stability results, but their higher resistivities may limit their application to short local interconnects only. Similarly, attempts to use highly conductive graphene have so far been limited due to the need for high processing temperatures, which are incompatible with CMOS technologies. Kaustav Banerjee and colleagues at the University of California, Santa Barbara have now developed an approach to fabricate intercalation-doped graphene nanoribbon interconnects within the thermal constraints of CMOS technology processing. The method, which is based on a pressure-assisted solid-phase diffusion technique, brings the growth temperature down to 300 °C, and the researchers are able to demonstrate the fabrication of 20-nm-wide multilayer graphene interconnects on SiO2. The resistivity of the interconnects is less than that of metal interconnects with similar cross-sections, and the results suggest a four-fold reduction in circuit delay could be achieved if they were used as an alternative to cobalt- and ruthenium-based interconnects. Furthermore, stability and reliability analysis suggests an absence of any electromigration-related issues.
关键词： interconnects,CMOS,resistivity,electromigration,graphene
更新于2025-09-04 15:30:14