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[IEEE 2018 2nd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) - Kolkata (2018.5.4-2018.5.5)] 2018 2nd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech) - Effect of Self-Consistency Technique on Current Density Profile of Resonant Tunneling Diode
摘要： This paper reveals the importance of self-consistency technique for computing current density in resonant tunneling device. AlxGa1-xAs/GaAs/AlyGa1-yAs is considered for simulation purpose, and both Schr?dinger and Poisson's equations are simultaneously solved subject to appropriate boundary conditions to obtain current density as a function of externally applied bias. Structural parameters and material compositions within type-I range are varied to get the fluctuations in current, which is otherwise absent when calculation is performed without applying self-consistency technique. Findings are significant as magnitude of current obtained is higher than that obtained when self-consistency is absent. Result has immense importance for low bias application of RTD due to the presence of peaks at particular system compositions.
关键词： Peak current density,Resonant tunneling diode,Poisson's equation,Current density,Self-consistency technique,Schrodinger's equation
更新于2025-09-23 15:22:29
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Electromodulation of the Negative Differential Resistance in an AlGaAs/GaAs Resonant Tunneling Diode
摘要： In this work, we investigate the impact of the width of the AlGaAs right barrier and the doping concentration in the contact layers on the negative differential resistance (NDR) and the device performance of a double-barrier AlGaAs/GaAs resonant tunneling diode (RTD). Our simulation is performed using a non-equilibrium Green's formalism (NEGF). The obtained results show that increasing the width Lb2 of the right barrier, strongly reduces the peak-to-valley current ratio (PVCR. Especially, it reduces from 2.5 for symmetric RTD AlGaAs (5 nm) / GaAs (5 nm) to 1.1 when the right barrier AlGaAs is equal to 8 nm. Our findings show that a specific width of the right barrier Lb2 = 9 nm exists for which the NDR disappears completely. In addition, an increase in the doping concentration in the contact layers is found to reduce the (PVCR) and, consequently, the (NDR). These results open the door for designing resonant tunneling diodes with suitable negative differential resistances. The simulation of the RTD is performed with the use of Nanohub tools which confirms the various results presented in this paper.
关键词： Schrodinger equation,Resonant tunneling diode,Peak to valley ratio,Current-voltage characteristics,Negative differential resistance
更新于2025-09-19 17:15:36
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Multiscroll chaotic attractors in Optical Injected Semiconductor Laser Driven by a Resonant Tunneling Diode Current
摘要： This paper shows a complex nonlinear dynamics of an optically injected laser diode (LD) between a free-running laser and a perturbed laser. A bifurcation diagram analysis sustained Lyapunov exponents’ spectra reveals chaotic and quasi-periodic dynamics for restricted ranges of directly modulated by electrical current from a resonant tunneling diode (RTD) circuit. The LD model evolves a new control parameter called effective gain coefficient (EGC) and can switch the frequency ??????and by EGC variations, including the generation of the hyperchaotic regime and multiscroll chaotic attractors through a cascade of periodic oscillations to the chaos. Moreover, an implementation of this new coupled system also shows that when an AC signal ?????? ??????(2??????????) is added to the DC voltage bias, the LD outputs show several optical signals such as periodic, injection.
关键词： chaotic attractors,optical injection,semiconductor laser,resonant tunneling diode,Optoelectronic circuit
更新于2025-09-19 17:13:59
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Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas
摘要： This study describes the design of a resonant tunneling diode (RTD) oscillator (RTD oscillator) with a RTD-gated-graphene-2DEF (two dimensional electron fluid) and demonstrates the functioning of this RTD oscillator through a transmission line simulation model. Impedance of the RTD oscillator changes periodically when physical dimension of the device is of considerable fraction of the electrical wavelength. As long as impedance matching is achieved, the oscillation frequency is not limited by the size of the device. An RTD oscillator with a graphene film and negative differential resistance (NDR) will produce power amplification. The positive electrode of the DC power supply is modified and designed as an antenna. So, the reflected power can also be radiated to increase RTD oscillator output power. The output analysis shows that through the optimization of the antenna structure, it is possible to increase the RTD oscillator output to 22 mW at 1.9 THz and 20 mW at 6.1 THz respectively. Furthermore, the RTD oscillator has the potential to oscillate at 50 THz with a matching antenna.
关键词： transmission line model,RTD-gated-graphene-2DEF,resonant tunneling diode (RTD),graphene-plasma,two-dimensional electron fluid (2DEF),resonant tunneling diode oscillator (RTD oscillator),terahertz
更新于2025-09-11 14:15:04
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Long wavelength type II InAs/GaSb superlattice photodetector using resonant tunneling diode structure
摘要： We report on a long wavelength type-II InAs/GaSb superlattice photodetector using resonant tunneling diode (RTD) structure. The linewidth of the satellite peak of the x-ray diffraction curve of the as-grown sample is only 15.7 arcsec showing a very high structural quality. The response maximum wavelength of the RTD detector is 7.5 μm and the 50% cutoff wavelength is 9.6 μm at 77 K. The measured QE is 147% at 7.5 μm when the applied bias voltage is 1.45 V and the corresponding responsivity is 8.9 A/W. This unusual QE is attributed to a large gain achieved when the device is under a resonant tunneling condition. The corresponding shot noise limited detectivity D* is 1.2×1010cm · Hz/W at 1.45 V at 77 K.
关键词： long wavelength,InAs/GaSb superlattice,quantum efficiency,resonant tunneling diode,type II
更新于2025-09-11 14:15:04
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[IEEE 2018 International Russian Automation Conference (RusAutoCon) - Sochi, Russia (2018.9.9-2018.9.16)] 2018 International Russian Automation Conference (RusAutoCon) - Reliability Prediction of Radio Frequency Identification Passive Tags Power Supply Systems Based on A<inf>3</inf>B<inf>5</inf> Resonant-Tunneling Diodes
摘要： The methodology of predicting radio frequency identification (RFID) passive tag power supply system reliability is developed. The reliability of a RFID passive tag power supply system is estimated in terms of a parametric failure associated with the I-V characteristics drift of resonant-tunneling diodes (RTD) that are a part of the tag rectifier under the influence of external factors beyond the tolerance limits. The methodology of the time to failure of the RFID passive tag power supply system calculation by the criterion of the minimum permissible range is presented. The developed methodology can be used in the design of RFID systems with passive UHF and SHF tags to predict their reliability under specified operating conditions. The developed algorithms and software modules can be integrated into the corresponding CAD systems.
关键词： passive tag,resonant-tunneling diode,degradation,radio frequency identification,I-V characteristic,reliability,power supply system
更新于2025-09-10 09:29:36
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[Advances in Intelligent Systems and Computing] Modelling and Simulation in Science, Technology and Engineering Mathematics Volume 749 (Proceedings of the International Conference on Modelling and Simulation (MS-17)) || Computation of Current Density in Double Well Resonant Tunneling Diode Using Self-consistency Technique
摘要： Double well resonant tunneling diode is analytically simulated for different constituent layer widths, and also for different operating temperatures. Peak current densities are obtained at particular bias values, which speak for eigenstates alignment between adjacent quantum wells. Self-consistency technique is incorporated for simulation purpose which provides accurate result regarding the position of the peaks, optimum structural parameters in order to obtain that magnitude, and the junction temperature to obtain measurable current at the applied bias range. It may also be noted that current increases with increase in temperature. Two different dimension set are used for simulation in order to reveal the external influence on electrical properties of the device. Different dimensions of contact regions also help to analyze fluctuations in peak current profile. Thus the device can be operated at those biasing points, where peaks are appeared.
关键词： Resonant tunneling diode,Self-consistency technique,Quantum transport,Current density,Semiconductor heterostructures
更新于2025-09-09 09:28:46
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[IEEE 2018 15th European Radar Conference (EuRAD) - Madrid, Spain (2018.9.26-2018.9.28)] 2018 15th European Radar Conference (EuRAD) - 15 Gbps Wireless Link Using W-band Resonant Tunnelling Diode Transmitter
摘要： A 15 Gbps wireless link over 50 cm distance is reported in this paper. A high power and low phase noise resonant tunneling diode (RTD) oscillator is employed as the transmitter. The fundamental carrier frequency is 84 GHz and the maximum output power is 2 mW without any power amplifier. The measured phase noise value was -79 dBc/Hz at 100 KHz and -96 dBc/Hz at 1 MHz offset. The modulation scheme used was amplitude shift keying (ASK). The 15 Gbps data link showed a correctable bit error rate (BER) of 4.1×10-3, while lower data rates of 10 Gbps and 5 Gbps had BER of 3.6×10-4 and 1.0×10-6, respectively.
关键词： resonant tunneling diode,amplitude shift keying (ASK),wireless communication
更新于2025-09-04 15:30:14
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[IEEE 2018 International Russian Automation Conference (RusAutoCon) - Sochi (2018.9.9-2018.9.16)] 2018 International Russian Automation Conference (RusAutoCon) - Application of Computer Statistical Experiment for Studying Resonant-Tunneling Diode Parameter Reproducibility Under Batch Production Conditions
摘要： The object of research is a resonant-tunneling diode (RTD) based on GaAs/AlGaAs multilayer heterostuctures. A software package based on the resonant-tunneling diode current-voltage characteristic’s high-speed modeling algorithm with a computer statistical experiment module is submitted. The developed package was used for studying the diode’s design parameters’ technological errors’ effect on the RTD I-V characteristics’ variation. The results' adequacy is verified by comparison with the experimental data.
关键词： computer statistical experiment,statistical optimization,resonant-tunneling diode
更新于2025-09-04 15:30:14