- 标题
- 摘要
- 关键词
- 实验方案
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A new approach to the schrodinger equation with position-dependent mass and its implications in quantum dots and semiconductors
摘要： In this study, we introduce a new approach to construct the Schr?dinger equation with position-dependent mass characterized by an emerging particle’s effective mass, in perfect analogy with the problems involving a position-dependent mass particle in semiconductor heterostructures. We have discussed several of its properties and some of its implications in quantum dots and semiconductors. It was observed that the PDM approach affects only semiconductors with large interatomic scaling such as non-crystalline semiconductors and its effect on conventional semiconductors is insignificant.
关键词： spatial transformation,quantum dots,Position-dependent mass,interatomic scaling
更新于2025-09-19 17:13:59
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Two-Color Mid-Infrared Laser Filaments Produce Terahertz Pulses with Extreme Efficiency
摘要： A novel quantization watermarking method is presented in this paper, which is developed following the established feature modulation watermarking model. In this method, a feature signal is obtained by computing the normalized correlation (NC) between the host signal and a random signal. Information modulation is carried out on the generated NC by selecting a codeword from the codebook associated with the embedded information. In a simple case, the structured codebooks are designed using uniform quantizers for modulation. The watermarked signal is produced to provide the modulated NC in the sense of minimizing the embedding distortion. The performance of the NC-based quantization modulation (NCQM) is analytically investigated, in terms of the embedding distortion and the decoding error probability in the presence of valumetric scaling and additive noise attacks. Numerical simulations on artificial signals confirm the validity of our analyses and exhibit the performance advantage of NCQM over other modulation techniques. The proposed method is also simulated on real images by using the wavelet-based implementations, where the host signal is constructed by the detail coefficients of wavelet decomposition at the third level and transformed into the NC feature signal for the information modulation. Experimental results show that the proposed NCQM not only achieves the improved watermark imperceptibility and a higher embedding capacity in high-noise regimes, but also is more robust to a wide range of attacks, e.g., valumetric scaling, Gaussian filtering, additive noise, Gamma correction, and Gray-level transformations, as compared with the state-of-the-art watermarking methods.
关键词： Decoding error probability,valumetric scaling,normalized correlation,spread transform,quantization watermarking
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE High Power Diode Lasers and Systems Conference (HPD) - Coventry, United Kingdom (2019.10.9-2019.10.10)] 2019 IEEE High Power Diode Lasers and Systems Conference (HPD) - Coherent beam combining of tapered amplifiers under QCW regime
摘要： In this paper, based on fractional calculus, the arbitrary-order fractor is proposed to implement the analog circuit realization of the arbitrary-order Fractional Hop?eld Neural Networks (FHNNs) and the fractor-based FHNNs are ?rst proposed to apply to the hardware security of defense against chip cloning attacks. Since the fractor is the most important circuit component needed to implement the FHNNs, the hardware achievement of the arbitrary-order fractor is the primary task and crux for the state-of-the-art application of the FHNNs to defense against chip cloning attacks. Motivated by this need, based on fractional calculus, the arbitrary-order fractor is proposed to implement the analog circuit realization of the arbitrary-order FHNNs and the fractor-based FHNNs are proposed to apply to defense against chip cloning attacks. The ?rst step is the proposal for the analog circuit realization of an arbitrary-order FHNN. In particular, the hardware achievement of the arbitrary-order net-grid-type capacitive scaling fractor of the arbitrary-order FHNNs is chie?y analyzed in detail. The circuit con?guration of the arbitrary-order net-grid-type scaling fractor can be achieved more convenient than any other discovered approximate implementation of the arbitrary-order fractor. Finally, the approximation performance of the arbitrary-order fractor of the FHNNs is analyzed, the arbitrary-order FHNNs are achieved by analog circuit realization, and its ability of defense against chip cloning attacks is illustrated in detail experimentally. The main contribution of this paper is the proposal for the ?rst preliminary attempt of a feasible hardware implementation of the arbitrary-order FHNNs for defense against chip cloning attacks. Different order FHNNs can be achieved and distributed for different users, respectively. Thus, in a similar way to frequency band, order band can also be allocated ef?ciently that is another emerging promising electronic resource.
关键词： Fractional calculus,defense against chip cloning attacks,fractance,allocation of order band,net-grid-type scaling fractor
更新于2025-09-19 17:13:59
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[IEEE 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Grenoble, France (2019.4.1-2019.4.3)] 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Nanowire & Nanosheet FETs for Ultra-Scaled, High-Density Logic and Memory Applications
摘要： We report on vertically stacked lateral nanowires (NW)/nanosheets (NS) gate-all-around (GAA) FET devices as promising candidates to obtain a better power-performance metric for logic applications for advanced sub-5nm technology nodes, in comparison to finFETs. In addition, vertical NW/NS GAA FETs appear particularly attractive for enabling highly dense memory cells such as SRAMs (with improved read and write stability), and as the selector devices for ultra-scaled MRAMs with lower energy consumption values. These cells can be manufactured by a cost-effective, co-integration scheme with a finFET or NW/NS FET high-performance logic platform for increased on-chip memory content.
关键词： lateral and vertical nanowire and nanosheet gate-all-around FETs,memory,CMOS,logic,scaling,MRAM
更新于2025-09-19 17:13:59
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Chiral Cavity Mode in a GaAs-Based Three-Dimensional Photonic Crystal Fabricated by a Micro-Manipulation Method using an Optical Microscope
摘要： A novel quantization watermarking method is presented in this paper, which is developed following the established feature modulation watermarking model. In this method, a feature signal is obtained by computing the normalized correlation (NC) between the host signal and a random signal. Information modulation is carried out on the generated NC by selecting a codeword from the codebook associated with the embedded information. In a simple case, the structured codebooks are designed using uniform quantizers for modulation. The watermarked signal is produced to provide the modulated NC in the sense of minimizing the embedding distortion. The performance of the NC-based quantization modulation (NCQM) is analytically investigated, in terms of the embedding distortion and the decoding error probability in the presence of valumetric scaling and additive noise attacks. Numerical simulations on artificial signals confirm the validity of our analyses and exhibit the performance advantage of NCQM over other modulation techniques. The proposed method is also simulated on real images by using the wavelet-based implementations, where the host signal is constructed by the detail coefficients of wavelet decomposition at the third level and transformed into the NC feature signal for the information modulation. Experimental results show that the proposed NCQM not only achieves the improved watermark imperceptibility and a higher embedding capacity in high-noise regimes, but also is more robust to a wide range of attacks, e.g., valumetric scaling, Gaussian filtering, additive noise, Gamma correction, and Gray-level transformations, as compared with the state-of-the-art watermarking methods.
关键词： Decoding error probability,spread transform,normalized correlation,quantization watermarking,valumetric scaling
更新于2025-09-19 17:13:59
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Scaling Resistance in Nanophotonics-Enabled Solar Membrane Distillation
摘要： This study compares the scaling behavior of membrane distillation (MD) with that of nanophotonics-enabled solar membrane distillation (NESMD). Previous research has shown that NESMD, due to its localized surface heating driven by photothermal membrane coatings, is an energy-efficient system for off-grid desalination; however, concerns remained regarding the scaling behavior of self-heating surfaces. In this work, bench-scale experiments were performed, using model brackish water, to compare the scaling propensity of NESMD with MD. The results showed NESMD to be highly resistant to scaling; a three times higher salt concentration factor (c/c0) was achieved in NESMD compared to MD without any decline in flux. Analyses of the scaling layer on NESMD membranes revealed that salt deposition was 1/4 of that observed for MD. Scaling resistance in NESMD is attributed to its lower operating temperature, which increases the solubility of common scalants and decreases salt precipitation rates. Precipitation kinetics measurements revealed an order of magnitude faster precipitation under heated conditions (62 °C, k = 8.7 × 10?2 s?1) compared to ambient temperature (22 °C, k = 7.1 × 10?3 s?1). These results demonstrate a distinct advantage of NESMD over MD for the treatment of high scaling potential water, where scaling is a barrier to high water recovery.
关键词： nanophotonics-enabled solar membrane distillation,photothermal membrane coatings,scaling resistance,desalination,membrane distillation
更新于2025-09-19 17:13:59
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[IEEE 2018 3rd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) - Bangalore, India (2018.5.18-2018.5.19)] 2018 3rd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) - Analysis of Single-Stage Resonant Power Factor Corrector for LED Lighting Application
摘要： A novel quantization watermarking method is presented in this paper, which is developed following the established feature modulation watermarking model. In this method, a feature signal is obtained by computing the normalized correlation (NC) between the host signal and a random signal. Information modulation is carried out on the generated NC by selecting a codeword from the codebook associated with the embedded information. In a simple case, the structured codebooks are designed using uniform quantizers for modulation. The watermarked signal is produced to provide the modulated NC in the sense of minimizing the embedding distortion. The performance of the NC-based quantization modulation (NCQM) is analytically investigated, in terms of the embedding distortion and the decoding error probability in the presence of valumetric scaling and additive noise attacks. Numerical simulations on artificial signals confirm the validity of our analyses and exhibit the performance advantage of NCQM over other modulation techniques. The proposed method is also simulated on real images by using the wavelet-based implementations, where the host signal is constructed by the detail coefficients of wavelet decomposition at the third level and transformed into the NC feature signal for the information modulation. Experimental results show that the proposed NCQM not only achieves the improved watermark imperceptibility and a higher embedding capacity in high-noise regimes, but also is more robust to a wide range of attacks, e.g., valumetric scaling, Gaussian filtering, additive noise, Gamma correction, and Gray-level transformations, as compared with the state-of-the-art watermarking methods.
关键词： Decoding error probability,spread transform,normalized correlation,quantization watermarking,valumetric scaling
更新于2025-09-19 17:13:59
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Direct observation of ultrafast electrons generated by high-intensity laser-matter interaction
摘要： High intensity ultrashort laser pulses interacting with thin solid targets are able to produce energetic protons and ions by means of extremely large accelerating fields, generated by escaping electrons. The characterization of such electrons is thus a key factor for the understanding of the accelerating potential temporal evolution. Here, we present temporally resolved measurements of the ultrafast escaping electron component. The charge, electric field, and temporal duration of the emitted ultrafast electron beams are determined using temporal diagnostics with a 100 fs temporal resolution. Experimental evidence of scaling laws for the ultrafast electron beam parameters with respect to the incident laser pulse energy is retrieved and compared with theoretical models, showing an excellent agreement.
关键词： ultrafast electrons,high-intensity laser-matter interaction,scaling laws,temporal diagnostics
更新于2025-09-19 17:13:59
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Analysis of the topographic roughness of the Moon using the Wavelet Leaders Method and the Lunar Digital Elevation Model from the Lunar Orbiter Laser Altimeter and SELENE Terrain Camera
摘要： The Wavelet Leaders Method (WLM) is a wavelet-based multifractal formalism that allows the identification of scale breaks (thus scaling regimes), the definition of scaling properties (mono versus multi fractality of the surface) and the calculation of the H?lder exponent that characterizes each pixel, based on the comparison between a theoretical wavelet and topographic values. Here we use the WLM and the SLDEM2015 digital elevation model to provide a near-global and a local isotropic characterization of the lunar roughness. The near-global study of baselines between 330 m and 1,350 km reveals scale breaks at ~1.3, 42.2 and 337.6 km. Scaling properties and H?lder exponent values were calculated for the three corresponding scaling regimes: 330–659 m, 1.3–21.1 km, and 42.2–168.8 km. We find that the dichotomy between the highlands and the maria is present at all scales. Between 330–659 m, the H?lder exponent map shows the unique signature of Orientale basin, rilles and a correlation with the age of mare units. Between 1.3–21.1 km, it shows the unique signature of the Orientale basin and a relationship with the density of 5-20 km diameter craters. Scaling properties and H?lder exponent values were also calculated locally for complex craters, basins, rilles and light plains, for two scaling regimes: 165–659 m, 1.3–21.1 km. Relationships between the H?lder exponent values at 165–659 m , the density of <500 m diameter craters and different geologic units were found and a potential scale break near 165 m was identified.
关键词： scaling regimes,Wavelet Leaders Method,SLDEM2015,lunar roughness,H?lder exponent
更新于2025-09-16 10:30:52
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Device Structure and Passivation Options for the Integration of Scaled IGZO TFTs
摘要： The focus of this work is on the performance dependence of scaled the device structure and IGZO TFTs with variations semiconductor passivation scheme. TCAD simulation was used to provide insight on the details which establish the limits on electrostatic control. Dielectrics used for the gate and back-channel regions have been adjusted to overcome short-channel effects, along with required modifications in process recipes for PECVD passivation layers, oxygen ambient annealing, and ALD capping material. Scaled devices with channel lengths as small as L = 1 μm have been investigated and evaluated by the electrostatic behavior, and stability when subjected to thermal and bias stress. An optimized process and associated procedural details for scaled devices is presented, along with suggested options for further channel length reduction to submicron dimensions.
关键词： IGZO TFTs,scaling,TCAD simulation,electrostatic control,PECVD,short-channel effects,ALD,thermal stability,bias stress,passivation
更新于2025-09-16 10:30:52