- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Influence of Silicon Layers on the Growth of ITO and AZO in Silicon Heterojunction Solar Cells
摘要： In this article, we report on the properties of indium tin oxide (ITO) deposited on thin-film silicon layers designed for the application as carrier selective contacts for silicon heterojunction (SHJ) solar cells. We find that ITO deposited on hydrogenated nanocrystalline silicon (nc-Si:H) layers presents a significant drop on electron mobility μe in comparison to layers deposited on hydrogenated amorphous silicon films (a-Si:H). The nc-Si:H layers are not only found to exhibit a larger crystallinity than a-Si:H, but are also characterized by a considerably increased surface rms roughness. As we can see from transmission electron microscopy (TEM), this promotes the growth of smaller and fractured features in the initial stages of ITO growth. Furthermore, secondary ion mass spectrometry profiles show different penetration depths of hydrogen from the thin film silicon layers into the ITO, which might both influence ITO and device passivation properties. Comparing ITO to aluminum doped zinc oxide (AZO), we find that AZO can actually exhibit superior properties on nc-Si:H layers. We assess the impact of the modified ITO Rsh on the series resistance Rs of SHJ solar cells with >23% efficiency for optimized devices. This behavior should be considered when designing solar cells with amorphous or nanocrystalline layers as carrier selective contacts.
关键词： secondary ion mass spectrometry (SIMS),indium tin oxide (ITO),series resistance,Aluminum doped zinc oxide (AZO),transparent conductive oxide (TCO),transmission electron microscopy (TEM),silicon heterojunction (SHJ)
更新于2025-09-16 10:30:52
-
Three-Dimensional Imaging of Selenium and Chlorine Distributions in Highly Efficient Selenium-Graded Cadmium Telluride Solar Cells
摘要： Thin-film solar modules based on cadmium telluride (CdTe) technology currently produce the world’s lowest cost solar electricity. However, the best CdTe modules now contain a cadmium selenium telluride (CST) alloy at the front of the absorber layer. Despite this, research characterizing the behavior of selenium in alloyed CdTe devices is currently very limited. Here we employ advanced secondary ion mass spectrometry measurements to map the three-dimensional distribution of selenium in a graded CST/CdTe device for the first time. We find significant interdiffusion of selenium between the CST and CdTe layers in the cell, primarily out of the CST grain boundaries and up into the CdTe grain boundaries and grain fringes above. This results in significant lateral variations in selenium concentrations across grains and hence also lateral fields, which we estimate using the measured selenium concentrations.
关键词： secondary ion mass spectrometry (SIMS),Alloying,CdTe,solar energy
更新于2025-09-16 10:30:52