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Effect of Precursor Aging on Builta??In Potential in Formamidiniuma??Based Perovskite Solar Cells
摘要： Formamidinium-based perovskite with optimal bandgap and improved thermal stability is a promising active material for application in perovskite solar cells (PSCs). The hybrid precursor solutions, formed by adding various smaller cations, are often used for improving the phase stability in PSCs. In this work, we report the effort on understanding the aging effect of a methylammonium- and bromine-free formamidinium precursor solution on the performance of FA0.85Cs0.1Rb0.05PbI3-based PSCs. Our results reveal that deterioration in the built-in potential in the PSCs is closely associated with the formation of the secondary phase in the FA0.85Cs0.1Rb0.05PbI3 active layer. The formation of the secondary phase in the active layer is related to the hydrolysis of the precursor solution. The suppression of the moisture encroachment greatly enhances the durability of the precursor solution and performance reproducibility of the PSCs.
关键词： precursor solution aging,perovskite solar cell,secondary phase,built-in potential
更新于2025-09-23 15:21:01
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Averaged angle-resolved electroreflectance spectroscopy on Cu(In,Ga)Se <sub/>2</sub> solar cells: Determination of buffer bandgap energy and identification of secondary phase
摘要： Currently, the use of Zn(O,S) as buffer material for Cu(In,Ga)Se2 (CIGS) solar cells is intensely studied in order to further boost the performance of these devices. In this context, nondestructive analytical tools are needed that enable the determination of buffer bandgap energies in the complete device. To this end, we developed a spectroscopic approach based on electroreflectance (ER). From a set of measured angle-resolved ER (ARER) spectra, an averaged modulus spectrum is numerically calculated. This method suppresses the commonly observed detrimental line-shape distortions due to interference effects in the layered device structure and thus enables the determination of bandgap energies even for thin buffer layers. To verify the working principle of ARER, we first apply it to CIGS absorber and CdS buffer layers. Then, we utilize it to investigate CIGS solar cells with Zn(O,S) buffers. All ARER results are compared to the results of diffuse ER, a technique previously developed for the suppression of interference fringes. We demonstrate that ARER is the superior ER method for nondestructive bandgap determination of thin buffer layers in complete CIGS solar cells. Moreover, a Cu containing compound was determined as a secondary phase in the Zn(O,S) buffer by combined ARER studies, scanning transmission electron microscopy, and energy-dispersive X-ray spectroscopy.
关键词： CIGS solar cells,secondary phase,bandgap energy,Zn(O,S) buffer,electroreflectance
更新于2025-09-12 10:27:22
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Fabrication of Cu2ZnSnS4 Thin Films from Ball-Milled Nanoparticle inks under Various Annealing Temperatures
摘要： Cu2ZnSnS4 (CZTS) has been recognized as a promising thin-?lm absorber material of chalcopyrite-related solar cells. A two-stage method for fabricating CZTS ?lms using CZTS nanoparticles was developed. Nanocrystal inks fabricated by a ball-milling method was utilized to deposit CZTS precursors by spin-coating approach. The CZTS precursors were annealed in the sulfur atmosphere under di?erent annealing temperatures ranging from 550 °C to 650 °C. In?uences of annealing temperature on grain growth, composition, crystallinity, and photovoltaic properties of CZTS ?lms were characterized. With the increase of annealing temperature, grain growth was enhanced, while the sulfur atomic ratio ?st increased then decreased. The crystallinity of the ?lms was signi?cantly improved after the annealing, and the obvious peak of the secondary phase of ZnS, were observed from the X-ray di?raction results, when the annealing temperature increased to 625 °C. However, the secondary phase was not detected from the surface Raman spectrum. Through comparing the Raman spectrum of di?erent areas of the CZTS ?lm, secondary phases of ZnS and SnS were observed, indicating the decomposition of CZTS ?lms, due to the high temperature. The highest conversion e?ciency of 7.5% was obtained when the annealing temperature was 600 °C.
关键词： Cu2ZnSnS4 solar cell,secondary phase,annealing
更新于2025-09-11 14:15:04