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Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
摘要： The effects of low-energy (<15 eV) high-flux O2+ ion bombardment (>1017 cm?2 cycle?1) during the plasma-enhanced atomic layer deposition (PE-ALD) were investigated. High-dose O2+ ion bombardment on the properties of Al2O3 films deposited on 3D nanostructures by PE-ALD caused interfacial mixing, and AlSiOx films with abrupt interfaces were formed on Si surfaces. Interfacially mixed AlSiOx films were selectively formed on single-crystal Si, amorphous Si, and degraded SiO2 surfaces, whereas normal ALD Al2O3 films were formed on thermally grown SiO2 surfaces. At the same time, the interfacially mixed AlSiOx films were selectively formed on the horizontal top and bottom faces of the 3D nanostructures, whereas normal ALD Al2O3 films were formed on the vertical sidewalls. The morphology and thickness of the film deposited on the amorphous Si surface were the same as those on the single-crystal Si surface. The interfacially mixed AlSiOx film possessed rough surface morphology and a layered structure of Al-/Si-/Al-rich AlSiOx layers. The low-energy high-flux O2+ ion bombardment condition required for the interfacial-mixing ALD was realized in a direct inductively coupled plasma (ICP) reactor with a self-resonant planar coil, in which high-density plasma was excited near the substrate. The O2+ ion flux was found to be controllable over a wide range through variation in the O2 pressure. The ratio of O2+ ion flux at 0.01 Torr to that at 1 Torr was 289. The steep decrease of the ion flux with increasing pressure was attributed to the decrease of electron density in the upstream plasma for intensifying electron energy loss and the decrease of the ambipolar diffusion coefficient in the downstream plasma. A comparison of electron densities near the substrate and those at the presheath edge calculated from measured positive ion fluxes using the Bohm criterion revealed that negative ions, which significantly affect the positive ion flux, scarcely exist near the substrate. The interfacial-mixing PE-ALD has the potential to realize area-selective and topographically selective depositions, which are key technologies for fabricating next-generation electronic devices with 3D nanostructures. The direct ICP reactor is suitable for realizing selective deposition using the interfacial-mixing ALD.
关键词： plasma-enhanced atomic layer deposition,selective deposition,inductively coupled plasma,interfacial mixing,ion bombardment
更新于2025-09-23 15:21:01
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Bio‐Assisted Tailored Synthesis of Plasmonic Silver Nanorings and Site‐Selective Deposition on Graphene Arrays
摘要： The spontaneous interaction between noble metals and biological scaffolds enables simple and cost-effective synthesis of nanomaterials with unique features. Here, plasmonic silver nanorings are synthesized on a ring-like protein, i.e., a peroxiredoxin (PRX), and used to assemble large arrays of functional nanostructures. The PRX drives the seeding growth of metal silver under wet reducing conditions, yielding nanorings with outer and inner diameters down to 28 and 3 nm, respectively. The obtained hybrid nanostructures are selectively deposited onto a solid-state 2D membrane made of graphene in order to prepare plasmonic nanopores. In particular, the interaction between the graphene and the PRX allows for the simple preparation of ordered arrays of plasmonic nanorings on a 2D-material membrane. This fabrication process can be finalized by drilling a nanometer scale pore in the middle of the ring. Fluorescence spectroscopic measurements in combination with numerical simulations demonstrate the plasmonic effects induced in the metallic nanoring cavity. The prepared nanopores represent one of the first examples of hybrid plasmonic nanopore structures integrated on a 2D-material membrane. The diameter of the nanopore and the atomically thick substrate make this proof-of-concept approach particularly interesting for nanopore-based technologies and applications such as next-generation sequencing and single-molecule detection.
关键词： plasmonics,selective-deposition,nanopores,hybrid-nanomaterials,silver nanorings
更新于2025-09-12 10:27:22
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Electrochemical and in situ SERS study of the role of an inhibiting additive in selective electrodeposition of copper in sulfuric acid
摘要： The role of an inhibiting additive in selective copper (Cu) deposition was investigated using linear sweep and cyclic voltammetry and in situ SERS. Both the normalized SERS peak intensity of Basic Red 12 and the Cu deposition current showed hysteresis. These results indicate that Basic Red 12 desorbs or decomposes on the surface during electrodeposition of Cu. Therefore the concentration of Basic Red 12 on the patterned area decreases more than that on the flat area. This inhomogeneity of concentration leads to the preferential growth of Cu on the patterned area.
关键词： overburden,copper electroplating,selective deposition,anisotropic deposition,copper interconnects
更新于2025-09-09 09:28:46