- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Bifacial p-Type PERC Solar Cell with Efficiency over 22% Using Laser Doped Selective Emitter
摘要： In this paper, we report one bifacial p-type PERC solar cell with e?ciency over 22% using laser doped selective emitter produced in larger-scale commercial line on 6-inch mono-crystalline wafer. On front side of the solar cell, square resistance of p-n junction was found to be closely related with laser power at certain laser scan speed and frequency. On the other side, the rear ?ngers with di?erent ratios of height and width and rear silicon nitride (SiNx) layer with di?erent thickness were optimized, and a highest rear e?ciency of the bifacial solar cell was obtained. Finally, bifacial silicon solar cells with the front and rear e?ciencies exceeding 22% and 15% (AM1.5, 1000 W/m2, 25 C) were successfully achieved, respectively.
关键词： p-type,bifacial,passivated emitter and rear (PERC) solar cells,laser doped selective emitter
更新于2025-09-23 15:19:57
-
Green-laser-doped selective emitters with separate BBr3 diffusion processes for high-efficiency n-type silicon solar cells
摘要： Laser-doped boron selective emitters are an ideal candidate for enabling less emitter recombination, lower contact resistance and better blue response of efficient n-type silicon solar cells. However, the low boron concentration of the borosilicate glasses formed during boron diffusion processes and the implementation of ultraviolet lasers have hindered the commercialization of laser-doped boron selective emitters. In this contribution, separate BBr3 diffusion processes for green-laser-doped selective emitters are demonstrated. Laser doping processes were conducted between (1) borosilicate glass deposition and boron driving in and (2) post-oxidation, achieving the optimized laser doped selective emitter with the Rsheet,pt/Rsheet,ptt of 95.0 Ω/□/54.3 Ω/□, accompanying with the pt profile of Nmax < 1.4? 1019 cm(cid:0) 3. By comparison to the homogeneous emitter with sheet resistance of 88.9 Ω/□, J0e, total of 45.3 fA/cm2 and ρc, metal of 2.9 mΩ/cm2, the employment of the optimum laser doped selective emitter has resulted in the J0e, total of 31.1 fA/cm2 and the ρc, metal of 1.0 mΩ/cm2. Finally, the improvement of simulated VOC (699.6 mV), FF (81.38%) and efficiency (23.13%) were obtained by using the optimized laser doped SEs, compared with the simulated VOC (694.5 mV), FF (81.14%) and efficiency (22.89%) of the reference. Separate BBr3 diffusion processes for green-laser-doped selective emitters demonstrate the employment of industrial green laser and boron diffusion furnace, instead of expensive ultraviolet laser and other complex boron resources, indicating a promising potential for industrial feasibility.
关键词： Driving in,Separate BBr3 diffusion,N-type silicon solar cells,Post-oxidation,Green-laser-doping,Selective emitter
更新于2025-09-19 17:13:59
-
High‐precision alignment procedures for patterning processes in solar cell production
摘要： We present two approaches for high-accuracy aligning of patterning processes with each other when fabricating solar cells. We introduce the approaches on the example of two different patterning processes of which one is adjustable (laser process) and one is not adjustable (screen-printing process). The basic idea is to measure the coordinates of the applied structures of each involved patterning process at discrete grid points with respect to a reference coordinate system. We chose the grid points such that they completely define the final cell pattern. Then, we adjust the grid point coordinates of one of the patterning processes (the laser process) according to the pattern of the other process (the screen-printing process). The laser then performs the patterning by connecting the corrected grid points with each other in the desired direction. We perform the associated high-precision measurement of the patterns' coordinates by using either a high-precision offline coordinate measuring machine or a high-resolution inline camera system with subsequent computer-based data processing. The latter inline method enables high throughput and is, in turn, of great interest for mass production of solar cells. In this paper, we demonstrate the alignment procedure approaches on “pPassDop” solar cells by adjusting a locally applied laser process to the directly following screen-printing step. This proof of principle includes both above-mentioned methods for coordinate determination in separate cell batches. Our innovative alignment procedures so far demonstrated the successful matching of 40-μm-wide screen-printed contact fingers to 70-μm-wide laser-processed lines over the entire area of 6-inch solar cells.
关键词： PERL,coordinate correction,silicon solar cells,patterning processes,selective emitter,PERC,bifacial,alignment,screen printing,pPassDop,laser
更新于2025-09-16 10:30:52
-
AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Adaptation of the industrial PERC solar cell process chain to plated Ni/Cu/Ag front contact metallization
摘要： Three approaches to close the efficiency gap between screen-printed Ag-paste and Ni/Cu/Ag-plated front contact metallization on industrial passivated emitter and rear cells (PERC) solar cells are presented in this paper. In the first approach, the POCl3 diffusion is adjusted to an emitter profile (reduced peak doping) for plated contacts. The second approach is to adapt the laser over doping (LOD) process of the phosphor silicate glass (PSG) to create the selective emitter to the properties of laser patterning and plating. In the third approach, we vary the process step order of front laser patterning and back side aluminum firing. The three approaches show very promising results. Efficiencies higher than 22% and open-circuit voltage VOC values of close to 680 mV are reached on a cell area of 251,99cm2. Overall the values excel the reference values obtained with screen printing and firing of Ag-paste. For future developments, VOC values between 685 mV and 690 mV and efficiencies around 22.5% seem very likely.
关键词： laser over doping,Ni/Cu/Ag-plated front contact,PERC solar cells,selective emitter,POCl3 diffusion
更新于2025-09-12 10:27:22
-
Theoretical analysis of solar thermophotovoltaic energy conversion with selective metafilm and cavity reflector
摘要： This work performs a detailed theoretical analysis for low-concentration solar thermophotovoltaic (STPV) system with both solar absorber and thermal emitter made of previously-developed selective meta?lms along with a cavity re?ector for performance enhancement. When paired with an InGaAsSb cell, the initial meta?lm structure shows an STPV system e?ciency of 7.1% at 50 suns, where about half of the incident solar energy is lost through the thermal emission from the top surface of the absorber according to energy loss analysis. In order to enhance the STPV system performance, the meta?lm layer thicknesses of the solar absorber and those of the thermal emitter are optimized at 50 suns, increasing the STPV system e?ciency from 7.1% to 10.2%. Moreover, a cavity re?ector above the absorber is considered to recycle the infrared photons emitted from the top surface of the absorber. The e?ects of the size and the re?ectivity of the cavity re?ector on the e?ciency are discussed. The results show that, the e?ciency of the optimized meta?lm based STPV system at 50 suns can be increased from 10.2% to 17.4% with a cavity made of ideal re?ectors.
关键词： Solar power,Selective emitter,Meta?lm,Thermophotovoltaic
更新于2025-09-11 14:15:04
-
High-efficiency n-type silicon PERT bifacial solar cells with selective emitters and poly-Si based passivating contacts
摘要： Bifacial crystalline silicon (c-Si) solar cells have currently attracted much attention due to the front high-efficiency and additional gain of power generation from the back side. Here, we have presented n-type passivated emitter and rear totally-diffused (n-PERT) bifacial c-Si solar cells featuring front selective emitter (SE) and polysilicon (poly-Si) based passivating contacts. The SE formation was scanned with laser doping based on front boron-diffusion p+ emitter. The poly-Si based passivating contacts consisting of nano-layer SiOx of ~1.5 nm thickness grown with cost-effective nitric acid oxidation and phosphorus-doped polysilicon exhibited excellent passivation for high open-circuit voltage. We have successfully achieved the large-area (156 × 156 mm2) n-PERT bifacial solar cells yielding top efficiency of 21.15%, together with a promising short-circuit current density of 40.40 mA/cm2. Theoretical calculation has further demonstrated that the optimal thickness of SiOx nano-layer will increase from 1.5 nm to 1.8 nm if the density of interface defect state decreases by one magnitude from 1 × 1010 cm?2/eV, and the cell efficiency can be improved up to 24.64% with open-circuit voltage over 0.720 V by optimizing the parameters of functional materials and interface layers. The present work has indicated that the commercialization of low-cost and high-efficiency n-PERT bifacial c-Si cells is possible due to the processes compatible with existing production lines.
关键词： n-PERT bifacial,Nano-layer SiOx,Poly-Si based passivating contacts,c-Si solar cells,Selective emitter
更新于2025-09-11 14:15:04