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European Microscopy Congress 2016: Proceedings || FIB patterning for position-controlled nanowire growth
摘要： Semiconductor nanowire (NW) based heterostructures are a promising material system for next generation optoelectronic devices, such as flexible solar cells and light emitting diodes [1]. Their reduced contact area and surface strain relaxation allow for epitaxial growth on lattice-mismatched substrates, a key advantage for integration of different III-V semiconductors with existing silicon-based technology. Position-controlled NWs can be grown in ordered arrays on Si to improve uniformity and device integration. This is commonly performed by using a SiO2 thin film as a mask. Patterning of circular holes in the mask (Fig. 1(a)) allows for site-specific NW growth in predefined patterns and positions. To date, this is performed using lithography techniques such as electron beam lithography or nanoimprint lithography [2]. Important processing parameters include oxide thickness, hole diameter and pattern pitch, requiring several steps to be optimized in order to achieve a high yield of uniform NWs [3]. Additionally, the catalytic particle is rarely centered in the hole, leading to undesirable asymmetry in the NW cross-sections [4]. In this work, the parameter space for direct patterning of NW growth substrates by focused ion beam (FIB) is explored (Fig. 1). Self-catalyzed GaAsSb NWs were grown using molecular beam epitaxy (MBE) on a FIB patterned Si(111) substrate with 40 nm thermal oxide, where hole size, dose and Ga-beam overlap were systematically varied (Fig. 1(a-c)). It is expected that a higher degree of flexibility and control can be attained using FIB compared to the conventionally used resist-based patterning techniques. In addition, patterning by FIB leads to Ga implantation in both Si and SiO2, which could positively affect the self-catalyzed NW growth and the properties of the NW-substrate system in a unique way. After MBE growth, three distinct growth regimes can be recognized, present in all arrays (Fig. 1(d-e)): The smallest (10 nm pattern) diameter row features a high yield (≤ 80%) of straight NWs. As the hole diameter increases there is initially a transition to more parasitic crystal growth and finally multiple (2-5) NWs grow within each hole. As the dose increases between arrays in each column, the patterned diameter for these transitions decreases proportionally. The results demonstrate that using FIB the parameter space can be mapped out efficiently within a single growth session and that growth can be tuned between aligned single NWs, 2D parasitic crystals and multiple NWs per hole. Transmission electron microscopy and electrical testing of single NWs directly on the growth substrate [5] will be used to refine the structural analysis and study the electrical properties of these NWs. It is expected that in addition to the flexibility of FIB patterning, III-V NWs grown on FIB-patterned Si will exhibit novel properties due to the implantation of Ga and the altered NW-substrate interface.
关键词： self-catalyzed,nanowires,focused ion beam,nanostructuring,GaAsSb
更新于2025-09-11 14:15:04
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High density GaAs nanowire arrays through substrate processing engineering
摘要： GaAs nanowires (NWs) vertically aligned were successfully fabricated through substrate processing engineering. High-density vertical GaAs NWs are grown on n-type Si (111) substrate by molecular beam epitaxy. Systematic experiments indicate that substrate pretreatment is crucial to vertical epitaxial growth of one-dimensional (1D) nanomaterials. The substrates etched using diluted buffered oxide etch (BOE) were explored to improve the NW density and vertical. We also find that the substrate processing engineering strongly affect the morphology of GaAs NWs. Finally, we demonstrate fabrication of GaAs NW arrays on Si surface by field-emission scanning electron microscopy (FE-SEM). This single-step process indeed offers a simple and cost-effective way to obtain a large area of GaAs NW arrays without using e-beam lithography (EBL) and/or nanoimprint lithography (NIL) processes. This work provided a new approach for hight density NW arrays.
关键词： GaAs nanowire arrays,self-catalyzed,buffered oxide etch,molecular beam epitaxy
更新于2025-09-09 09:28:46
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Insight of surface treatments for CMOS compatibility of InAs nanowires
摘要： A CMOS compatible process is presented in order to grow self-catalyzed InAs nanowires on silicon by molecular beam epitaxy. The crucial step of this process is a new in-situ surface preparation under hydrogen (gas or plasma) during the substrate degassing combined with an in-situ arsenic annealing prior to growth. Morphological and structural characterizations of the InAs nanowires are presented and growth mechanisms are discussed in detail. The major influence of surface termination is exposed both experimentally and theoretically using statistics on ensemble of nanowires and density functional theory (DFT) calculations. The differences observed between Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE) growth of InAs nanowires can be explained by these different surfaces terminations. The transition between a vapor solid (VS) and a vapor liquid solid (VLS) growth mechanism is presented. Optimized growth conditions lead to very high aspect ratio nanowires (up to 50 nm in diameter and 3 micron in length) without passing the 410 °C thermal limit, which makes the whole process CMOS compatible. Overall, our results suggest a new method for surface preparation and a possible tuning of the growth mechanism using different surface terminations.
关键词： nanowires,growth modeling,self-catalyzed growth,hydrogen preparation,density functional theory (DFT) modeling,III-V semiconductors on silicon,InAs
更新于2025-09-04 15:30:14
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Deterministic switching of the growth direction of self-catalyzed GaAs nanowires
摘要： Typical vapor-liquid-solid growth of nanowires is restricted to vertical one-dimensional geometry, while there is a broad interest for more complex structures in the context of electronics and photonics applications. Controllable switching of the nanowire growth direction opens up new horizons in the bottom-up engineering of self-assembled nanostructures, for example, to fabricate interconnected nanowires used for quantum transport measurements. In this work, we demonstrate a robust and highly controllable method for deterministic switching of the growth direction of self-catalyzed GaAs nanowires. The method is based on the modification of the droplet-nanowire interface in the annealing stage without any fluxes and subsequent growth in the horizontal direction by a twin-mediated mechanism with indications of a novel type of interface oscillations. A 100% yield of switching the nanowire growth direction from vertical to horizontal is achieved by systematically optimizing the growth parameters. A kinetic model describing the competition of different interface structures is introduced to explain the switching mechanism and the related nanowire geometries. The model also predicts that growth of similar structures is possible for all vapor-liquid-solid nanowires with commonly observed truncated facets at the growth interface.
关键词： Growth direction,Surface energetics,Self-catalyzed GaAs nanowires,Crystal facets
更新于2025-09-04 15:30:14