S-Type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

摘要： Current-controlled (also known as “S-type”) negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, it is experimentally identified that semiconducting transition-metal dichalcogenides (TMDs) can host a bipolar S-type NDR devices. Theoretical simulations indicate that the origin of the NDR in these devices arises from a thermal feedback mechanism. Furthermore, the potential applications of TMD-based S-type NDR device in signal processing and neuromorphic electronics are demonstrated.