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On-chip Optical Vector Quadrature De-multiplexer Proposal for QAM De-aggregation by Single Bi-directional SOA-based Phase-sensitive Amplifier
摘要： In this paper, a simple optical vector quadrature de-multiplexer (QD) scheme is proposed for de-aggregating input 10 Gbaud 16/32/64 quadrature amplitude modulation (QAM) signals into two pulse amplitude modulation (PAM) streams. The proposed QD is based on a single bi-directional degenerate phase-sensitive amplifier (PSA), where the wavelength and the polarization status of the extracted in-phase and quadrature components stay the same as the input signal. Since the proposed QD is realized using PSA based on semiconductor optical amplifier (SOA), it is also possible to realize an on-chip QD system, providing an integrated platform for optical signal processing. Through numerical simulation, the transfer characteristics of the proposed QD system show that the SOA-based PSA has a high phase-sensitive gain extinction ratio of 44.1 dB. The constellations, error vector magnitudes (EVMs), and bit-error rates (BERs) of the data streams after the de-aggregation are numerically investigated to verify the proposed QD scheme. For the 10 Gbaud 16/32/64 QAM signals with an input optical signal-to-noise ratio (OSNR) of 25 dB, the de-aggregated PAM4/PAM6/PAM8 signals show 6.1, 5.6, and 8.2 dB receiver OSNR improvements at the BER of 10?3, respectively. Also, to optimize the performance of the subsystem, the BER performance dependence on the phase difference between two arms in the subsystem is also examined. The simulation results reveal that the proposed QD can accomplish the function of optical vector de-aggregation well for the high-level QAM signals. The proposed QD can be applied to information de-aggregation, format conversion, and direct detection for optical vector signals, which may have great potential values for the flexible optical networks.
关键词： Optical fiber communication,semiconductor optical amplifiers,nonlinear optical devices,optical signal processing
更新于2025-09-23 15:22:29
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[IEEE 2019 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC) - Ixtapa, Mexico (2019.11.13-2019.11.15)] 2019 IEEE International Autumn Meeting on Power, Electronics and Computing (ROPEC) - Correlation Study between Photovoltaic Power Output and Environmental Variables Using an Embedded IoT System
摘要： An ultrafast electro-optical amplified switch based on chip-on-carrier semiconductor optical amplifier with high optical contrast (33 dB) is presented. Switching times up to 115 ps with small overshoot were achieved by using the multi-impulse step injected current technique. These results are compared with previous preimpulse step injected current technique, and achieve a reduction of the inherent, post switching gain fluctuations without worsening the switching times. In addition, pulse formats for controlling such a kind of electro-optical switches are numerically analyzed and compared with experiments.
关键词： Electro-optics switches,semiconductor optical amplifiers,optical switches
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sozopol, Bulgaria (2019.9.6-2019.9.8)] 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Effect of Ag, Cu, and Co Underlayers on Luminescence and Lasing of Vapor-Phase-Grown ZnO Microcrystals
摘要： An ultrafast electro-optical amplified switch based on chip-on-carrier semiconductor optical amplifier with high optical contrast (33 dB) is presented. Switching times up to 115 ps with small overshoot were achieved by using the multi-impulse step injected current technique. These results are compared with previous preimpulse step injected current technique, and achieve a reduction of the inherent, post switching gain fluctuations without worsening the switching times. In addition, pulse formats for controlling such a kind of electro-optical switches are numerically analyzed and compared with experiments.
关键词： Electro-optics switches,semiconductor optical amplifiers,optical switches
更新于2025-09-19 17:13:59
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[IEEE 2019 12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo) - Hangzhou, China (2019.10.21-2019.10.23)] 2019 12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo) - Potential Applicability of Single-Walled Carbon Nanotube Through-Silicon Vias for Differential Signal Transmission
摘要： An ultrafast electro-optical amplified switch based on chip-on-carrier semiconductor optical amplifier with high optical contrast (33 dB) is presented. Switching times up to 115 ps with small overshoot were achieved by using the multi-impulse step injected current technique. These results are compared with previous preimpulse step injected current technique, and achieve a reduction of the inherent, post switching gain fluctuations without worsening the switching times. In addition, pulse formats for controlling such a kind of electro-optical switches are numerically analyzed and compared with experiments.
关键词： Electro-optics switches,semiconductor optical amplifiers,optical switches
更新于2025-09-19 17:13:59
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Numerical Simulation of an InP Photonic Integrated Cross-Connect for Deep Neural Networks on Chip
摘要： We propose a novel photonic accelerator architecture based on a broadcast-and-weight approach for a deep neural network through a photonic integrated cross-connect. The single neuron and the complete neural network operation are numerically simulated. The weight calibration and weighted addition are reproduced and demonstrated to behave as in the experimental measurements. A dynamic range higher than 25 dB is predicted, in line with the measurements. The weighted addition operation is also simulated and analyzed as a function of the optical crosstalk and the number of input colors involved. In particular, while an increase in optical crosstalk negatively influences the simulated error, a greater number of channels results in better performance. The iris flower classification problem is solved by implementing the weight matrix of a trained three-layer deep neural network. The performance of the corresponding photonic implementation is numerically investigated by tuning the optical crosstalk and waveguide loss, in order to anticipate energy consumption per operation. The analysis of the prediction error as a function of the optical crosstalk per layer suggests that the first layer is essential to the final accuracy. The ultimate accuracy shows a quasi-linear dependence between the prediction accuracy and the errors per layer for a normalized root mean square error lower than 0.09, suggesting that there is a maximum level of error permitted at the first layer for guaranteeing a final accuracy higher than 89%. However, it is still possible to find good local minima even for an error higher than 0.09, due to the stochastic nature of the network we are analyzing. Lower levels of path losses allow for half the power consumption at the matrix multiplication unit, for the same error level, offering opportunities for further improved performance. The good agreement between the simulations and the experiments offers a solid base for studying the scalability of this kind of network.
关键词： deep neural network,photonic neural network,image classification,semiconductor optical amplifiers,artificial neural networks,photonic integrated circuits
更新于2025-09-19 17:13:59
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High-Power, Narrow-Linewidth, Miniaturized Silicon Photonic Tunable Laser with Accurate Frequency Control
摘要： We have demonstrated a hybrid-integrated silicon photonic (SiPh) tunable laser in a miniaturized package, suitable for coherent modules in small form factors such as OSFP and QSFP-DD. Through the integration of an in-house-designed high-power semiconductor optical amplifier (SOA), the developed SiPh laser has achieved a record-high output power of 21.5 dBm across the C-band. Also, this laser exhibits narrow linewidths down to 60 kHz, SMSR larger than 50 dB, low relative intensity noise below -150 dB/Hz, and a broad tuning range of 65 nm. These performance parameters are preferable for 400 Gb/s and beyond coherent communications using advanced high-order modulation formats. Moreover, an on-chip integrated sensor technology was developed for accurate laser frequency control. We have achieved 1 GHz frequency stability of SiPh laser against SOA current changes or package temperature variations between 10 oC and 80 oC. We further show the feasibility of this developed SiPh laser for 64 Gbaud, 16/64 QAM coherent transmission by integrating with an in-house InP-PLC hybrid coherent optical subassembly (COSA).
关键词： Wavelength tunable lasers,Silicon photonics,Hybrid integration,Photonic integrated circuits,Semiconductor optical amplifiers
更新于2025-09-19 17:13:59
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Energy Efficient Switching Technique for High-Speed Electro-Optical Semiconductor Optical Amplifiers
摘要： The analysis and performance of an efficient microwave coupler using asymmetrical impedance matching are introduced aiming high-speed electro-optical space switches employing a semiconductor optical amplifier (SOA). Through the reduction of the step matching resistor, its parasitic, and the optimization of the injected electrical switching signals, the proposed coupler was able to significantly reduce the SOA energy consumption while maintaining its ultrafast state transition with reduced transient behavior. Overall, the SOA-based switching action achieved guard times below 500 ps with overshoots close to 0% while operating with low bias currents and short pre-impulses, with a driver power close to 135 mW and energy consumption of 3.4 pJ/bit.
关键词： Electro-optical devices,semiconductor optical amplifiers,electro-optical switches
更新于2025-09-16 10:30:52
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Optical Fiber Communications (Principles and Applications) || Optical Amplifiers
摘要： An optical amplifier is a widely used device in optical fiber communications for the purpose of amplification of the optical signal generated by an optical transmitter. The optical signal is directly amplified to yield optical signal without any conversion to electrical signal first and then restoring it to amplified optical signal. This implies that optical amplifiers operate on photons in all-optical domain. In essence, optical amplifiers do require source and photodetector as optoelectronic devices and additional electronic circuits for other operations such as shaping of optical pulses including retiming. But why do we need optical amplifiers? We know that typical fiber loss around 1500-nm wavelength is approximately 0.2 dB/km. Let us examine what happens after the optical signals travel about 100 km down the fiber. The signals are attenuated by 20 dB. So they need to be amplified, otherwise the signal-to-noise ratio of detected signals is too low and bit-error-rate becomes too high (typically desired value of BER is <10-9). One way to resolve this issue is to detect the weak signals, followed by modulating a new laser (optical-to-electrical-to-optical conversions) which requires high-speed (>10 GHz) electronic circuitry. Therefore, the best way to amplify the signal is only optically and the preferred method is fiber amplifier which is the most efficient, the most stable and the one with the lowest loss.
关键词： Erbium-doped fiber amplifiers,Raman fiber amplifiers,optical amplifiers,semiconductor optical amplifiers,optical fiber communications
更新于2025-09-12 10:27:22
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All-Optical Wavelength Conversion in an InP Photonic Integrated Turbo-Switch
摘要： We experimentally demonstrate all-optical wavelength conversion of 56 Gb/s non-return-to-zero (NRZ) signals in an Indium Phosphide (InP) photonic integrated circuit implementing a turbo-switch. The circuit consists of two cascaded semiconductor optical amplifiers (SOAs) with a bandpass filter in between. In this configuration, cross gain modulation (XGM) between a modulated input signal and a continuous wave (CW) light in the first SOA allows to generate a wavelength converted copy of the input signal, while the second SOA, fed by the probe signal selected by the filter, ensures a fast gain recovery. Operations in down- and up-conversion are shown by ER and BER measurements, demonstrating the effectiveness of the photonic integrated circuit (PIC).
关键词： all-optical wavelength conversion,semiconductor optical amplifiers,photonic integrated circuits,turbo-switch,Integrated optics
更新于2025-09-12 10:27:22
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Determination of the Residual Amplified Spontaneous Emission in Single-Mode Semiconductor Optical Amplifiers
摘要： The Master-Oscillator-Power-Amplifier (MOPA) is a laser light source best suited to provide high power, stable frequency, and narrow linewidth emission. In state-of-the-art MOPA systems, semiconductor optical amplifiers (SOAs) with single-mode lateral waveguides provide a compromise between the demands for high power on one side and excellent beam quality and small astigmatism of the optical mode on the other. The amplified spontaneous emission (ASE) in SOAs remains a limiting factor for the deployment of the MOPA systems in quantum technology applications. The presence of ASE reduces the carrier density and hence the device efficiency, increases the noise in the output signal, and adds incoherent background radiation that is critical, for example, for atom interferometry applications. It is therefore important to understand the dependence of the ASE on the design and operating conditions of an SOA in detail in order to develop SOAs optimized for applications that require spectrally very pure radiation. In this work, the coherent and the residual ASE power of ridge waveguide (RW) SOAs are experimentally determined as a function of the seed power (optical power at the input of the SOA) and the SOA current. The experiment provides essential information about the suppression of the ASE background and the saturation behaviour of the optical amplifier. The measurement setup is depicted in Fig. 1 (a). The seed laser (ECDL, TE-polarized at 871 nm) is operated far above its threshold to avoid amplification of the spontaneous emission of the seed laser by the SOA. An acousto-optic modulator (AOM) is used to set the seed power. The laser beam is then fed into the 6 mm long SOA. A non-polarizing beam splitter (BS) cube divides the output beam into two parts. One part (reference beam) is detected using a power meter (PM). The spectrum of the second part is recorded using an Advantest Q8347 optical spectrum analyser (OSA). The measured data is analysed using the correlation between optical power measured with the power meter and the optical spectrum. The ASE power is reconstructed from the remaining ASE (fitted) spectrum after removing the coherent part. Fig. 1(b) shows the measured total output, ASE and coherent powers retrieved from the spectrum as a function of the seed power. The measured quantities in Fig. 1(b) are compared to theoretical values which are calculated using a SOA model similarly as described in [2]. The carrier-density dependent spectra of the gain and the spontaneous emission are obtained from a microscopic model taking into account the waveguide structure [3]. The comparison shows good qualitative agreement between theory and measurement. We show how the experimental findings are used to validate and calibrate the model and how the model can be applied to compare the performance (coherent power, ASE background, saturation behaviour) of SOAs at different seed powers, injection current setting, different lengths or different lateral geometries.
关键词： ridge waveguide SOAs,semiconductor optical amplifiers,Master-Oscillator-Power-Amplifier,quantum technology applications,amplified spontaneous emission
更新于2025-09-12 10:27:22