Formation of CH <sub/>3</sub> NH <sub/>2</sub> -incorporated intermediate state in CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> hybrid perovskite thin film formed by sequential vacuum evaporation

摘要： CH3NH3PbI3 thin films were formed with various deposition rates of PbI2 first layer using a sequential vacuum evaporation method (SVE) to understand the formation behavior. Under low PbI2 deposition rates with 1 and 3 ? s?1, the thin films did not form the hybrid perovskite structure. Over the 6 ? s?1 deposition rate, the perovskite structure is observed with the remaining PbI2 and an intermediate phase together. In the 10 ? s?1, the intermediate phase is increased, and the CH3NH2 molecular defect is observed. The hybrid perovskite thin film formed by SVE is confirmed with tiny grains and CH3NH2-incorporated intermediate state.