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Determination of the series resistance of a solar cell through its maximum power point
摘要： A simple analytical approach has been developed to determine the series resistance, Rs, of a solar cell. The method adopted here depends only on the knowledge of the open-circuit voltage, Voc, and the current and voltage at the maximum power point, Isc and Vmp respectively. This approach, based on a knowledge of these operating output parameters of the cell, provides a theoretical framework for an existing computer simulated approach which has been widely used in industries.
关键词： series resistance,short-circuit current,five-parameter model,light generated current,solar cell,shunt resistance
更新于2025-09-23 15:19:57
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Numerical optimisation and recombination effects on the vertical-tunnel-junction (VTJ) GaAs solar cell up to 10,000 suns
摘要： Ultra-high concentrator photovoltaic systems (UHCPV), usually referred to CPV systems exceeding 1000 suns, are signalled as one of the most promising research avenues to produce a new generation of high-efficiency and low-cost CPV systems. However, the structure of current concentrator solar cells prevents their development due to the unavoidable series resistance losses at such elevated concentration ratios. In this work, we investigate the performance of the so-called vertical-tunnel-junction (VTJ), recently introduced by the authors, by using advance TCAD. In particular, we carry out an optimisation procedure of the key parameters that affect its performance and conduct a deep investigation of the impact of the main recombination mechanisms and of sun concentration up to 10,000 suns. The results indicate that the performance of the novel structure is not significantly affected by these two factors. A record efficiency of 32.2% at 10,000 suns has been found. This represents a promising way to obtain state-of-the-art efficiencies above 30% for single-band-gap cells, and offers a new route towards the development of competitive CPV systems operating at ultra-high concentration fluxes.
关键词： Tunnel diode,Concentrator photovoltaics,Vertical solar cells,Series resistance,Gallium arsenide (GaAs)
更新于2025-09-23 15:19:57
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[IEEE SoutheastCon 2019 - Huntsville, AL, USA (2019.4.11-2019.4.14)] 2019 SoutheastCon - Design and Construction of Automated Electroluminescent Imaging System for Solar Cell Series Resistance Analyses
摘要： The Electroluminescence technique (ELIT) is used to characterize the spatial uniformity of the series resistance of a solar cell. When current is applied across the metal contacts, a solar cell operates analogously to LED. The image of the illuminated solar cell is captured via a Pentax K100D camera and sent wirelessly using a Wi-Fi SD card to a local computer. The captured image is displayed on the computer terminal, then the image is used for the qualitative evaluation of the series resistance is then obtained by the image processing tools in MATLAB for it to be displayed on the GUI. The primary advantages of the system are its low cost, automation, and simplicity. This EL system aims to measure within 5 percent accuracy of an I-V testing device at a fraction of the cost.
关键词： solar cell,Electroluminescence technique,MATLAB,automation,series resistance
更新于2025-09-19 17:13:59
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Solar Cells Based on Cu(In, Ga)Se2 Thin-Film Layers
摘要： This paper presents the results of experimental studies of spectral, dark current–voltage and light load characteristics of the selenide–copper–gallium–indium (Cu(In, Ga)Se2) solar cell. Тhe main fundamental parameters of the photoactive semiconductor layer Cu(In, Ga)Se2, such as the band gap, the resistivity of the layer, the equilibrium majority–carrier concentration, the lifetime and the product μ nτn of nonequilibrium minority carriers from the spectral, photoelectric and dark current–voltage characteristics are determined. Based on an analysis of the light-load current–voltage characteristics at various solar radiation powers (50–1000 W/m2), the main parameters of the p–n junction were determined, as well as the nonideality factor and the magnitude of the reverse diode saturation current; a photogeneration mechanism was established in the studied solar radiation range, which had the character of a diffusion mechanism, where carrier recombination in the photoactive layer did not have a significant effect. We found that in conditions of real solar lighting (Рrad = 50–1000 W/m2), the output parameters of the solar cell – short-circuit current, open circuit voltage, the maximum output power increases with Рrad. The fill factor (FF) of the light-current–voltage characteristics has a maximum at Рrad ≈ 200 W/m2, and an efficiency has a maximum value at Рrad ≈ 600 W/m2. The observed dependences of FF and efficiency are explained by the dependence of the series (Rser) and shunt (Rsh) resistance of a solar cell on Prad. To maintain the efficiency of a solar cell based on thin-film layers Cu(In, Ga)Se2, equally high in conditions of increased radiation, as well as in conditions of low solar radiation, it is necessary that Rser decreases and Rsh does not change with Prad.
关键词： photoactive thin film layer,series resistance,solar cell,Cu(In, Ga)Se2,fill factor,short circuit current,solar radiation power,light current–voltage characteristics,efficiency,open circuit voltage,shunt resistance
更新于2025-09-16 10:30:52
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Influence of Silicon Layers on the Growth of ITO and AZO in Silicon Heterojunction Solar Cells
摘要： In this article, we report on the properties of indium tin oxide (ITO) deposited on thin-film silicon layers designed for the application as carrier selective contacts for silicon heterojunction (SHJ) solar cells. We find that ITO deposited on hydrogenated nanocrystalline silicon (nc-Si:H) layers presents a significant drop on electron mobility μe in comparison to layers deposited on hydrogenated amorphous silicon films (a-Si:H). The nc-Si:H layers are not only found to exhibit a larger crystallinity than a-Si:H, but are also characterized by a considerably increased surface rms roughness. As we can see from transmission electron microscopy (TEM), this promotes the growth of smaller and fractured features in the initial stages of ITO growth. Furthermore, secondary ion mass spectrometry profiles show different penetration depths of hydrogen from the thin film silicon layers into the ITO, which might both influence ITO and device passivation properties. Comparing ITO to aluminum doped zinc oxide (AZO), we find that AZO can actually exhibit superior properties on nc-Si:H layers. We assess the impact of the modified ITO Rsh on the series resistance Rs of SHJ solar cells with >23% efficiency for optimized devices. This behavior should be considered when designing solar cells with amorphous or nanocrystalline layers as carrier selective contacts.
关键词： secondary ion mass spectrometry (SIMS),indium tin oxide (ITO),series resistance,Aluminum doped zinc oxide (AZO),transparent conductive oxide (TCO),transmission electron microscopy (TEM),silicon heterojunction (SHJ)
更新于2025-09-16 10:30:52
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Reverse Heterojunction (Al)GaInP Solar Cells for Improved Efficiency at Concentration
摘要： Mitigating series resistance is crucial to the efficiency of concentrator solar cells at high current density. Conventional AlGaInP junction designs for the top junction of III–V multijunction cells present a challenging tradeoff between series resistance on the one hand and current collection and voltage on the other hand. In this article we discuss the physics of a reverse heterojunction solar cell that aims to improve on this tradeoff by combining a high bandgap Al0.18Ga0.33In0.49P base and a lower bandgap (Al)GaInP emitter. The high mobility of the emitter leads to a relatively low series resistance, compared with a high bandgap homojunction cell. The electroluminescence spectrum shows emission peaks from both the emitter and base, leading to an open-circuit voltage that is not strictly dominated by either layer. The reverse heterojunction design is increasingly beneficial as the one-sun voltage increases.
关键词： heterojunction,III–V solar cell,Concentration,series resistance
更新于2025-09-16 10:30:52
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AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Averaging the unaverageable: Defining a meaningful local series resistance for large-area silicon solar cells
摘要： From its definition based on lateral voltage drops, the local series resistance isn’t an arithmetically averageable quantity because voltage isn’t extensive; however, only such quantities can be averaged. Still, empirically it was found that averaging series images arithmetically provides rather reasonable results. Since the emitter of a large-area silicon solar cell is nearly an equipotential layer, one can linearize the description of the lateral voltage distribution (with respect to the forward-bias current and the emitter resistivity), from which we obtain an averageable local series resistance for the H-type grid geometry; its averageability stems from averaging the parallel paths of vertical current flow. By construction, the average obtained from this linear response theory is identical to the lumped value coming from the illumination intensity variation method, and it also shows the experimentally observed dependency on the forward-bias diode current.
关键词： local series resistance,linear response theory,arithmetic averaging,illumination intensity variation method,silicon solar cells
更新于2025-09-16 10:30:52
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Study of the static characteristic I-V and the electrical parameters corresponding to the shunt resistance Rsh and series resistance Rs per unit area of a solar cell with grain size
摘要： This paper presents a new technique based on the junction recombination velocity (Sf: junction recombination velocity) at the grain size for the evaluation of the series and shunt resistances. The study of the response of the solar cell and the parameters of recombination in grain size, which are the object of the investigation, is related to the study of the static characteristic I-V and electrical parameters Rs and Rsh under a magnetic field. This study has allowed us to address some of the theoretical aspects of the field solar cell in order to draw a conclusion and some perspectives. Based on the results obtained for the photocurrent density and the photovoltage, we will study the I-V characteristic of the solar cell to then be able to propose a model for the determination of the shunt resistance Rsh and the series resistance Rs. Series resistance investigations, including numerical simulations and field data tests, are conducted to examine the energetic behavior of the PV modules for efficiency. Experimental results show that the proposed direct resistance-estimation method allows the PV modules to achieve their maximum power and efficiency under various operation conditions.
关键词： Magnetic field,Solar cell,Series resistance,Shunt resistance,Grain size,Junction Recombination Velocity
更新于2025-09-12 10:27:22
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Fundamental Aspects Concerning the Validity of the Standard Equivalent Circuit for Large‐Area Silicon Solar Cells
摘要： The standard equivalent circuit of a solar cell amounts to a lumped description by separate diode and resistor elements. Since its application to a large-area silicon solar cell effectively implies averaging the emitter resistance which, however, is closely coupled to the p–n junction, it is not self-evident that it works more or less well. Using an analytically solvable distributed series resistance model and systematically treating the deviations from the ideal case of zero emitter resistance, the equivalent circuit is found in linear order in the sheet resistivity. In this linear order, the lumped voltage losses are fully compatible with the integrated Joule losses; this compatibility turns out to be a necessary and sufficient condition for modeling the local series resistance of a large-area silicon solar cell. In higher orders of the sheet resistivity, however, the lumped voltage losses are not compatible with the integrated Joule losses, which means that the equivalent circuit cannot describe these higher orders. The equivalent circuit resulting from the linear-order lumped series resistance accounts for the experimentally observed variation of the lumped series resistance along the current–voltage characteristic, which turns out to be fully described by a dependence on the dark diode current only.
关键词： Joule losses,equivalent circuit,solar cell modeling,voltage losses,local series resistance
更新于2025-09-12 10:27:22
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Influence of Temperature on the Output Parameters of a Photovoltaic Module Based on Amorphous Hydrogenated Silicon
摘要： The light load current-voltage characteristics of a solar photovoltaic module based on amorphous hydrogenated silicon have been studied at different temperatures under conditions of natural solar illumination (Рrad = 870 ± 10 W/m2). It has been found that the temperature dependence of the photocurrent has two slopes due to a change in the generation–recombination mechanism. The increase in the value of the short-circuit current with increasing temperature of the photovoltaic module is explained by a rise in the drift lengths of minority charge carriers due to an increase in the lifetime of minority carriers. In this case, the quasi Fermi level shifts to the conduction band, and the concentration of recombination centers decreases due to recharging of defective levels (D0 → D–). The decrease in the value of the open-circuit voltage with increasing temperature is explained by the exponential increase in the reverse saturation current and decrease in the band gap of the semiconductor. It has been found that the fill factor (FF) of the current–voltage characteristics decreases with increasing temperature, most likely due to a decrease in the shunt resistance (Rsh), which connects parallel to the p–n junction, consists of parasitic resistances, and leads to an increase in leakage currents. The temperature coefficient of the maximum output power has a positive value in the range of 320–332 K, i.e., increases with temperature. It has been revealed that the values of shunt and series resistance decrease with increasing temperature. A large loss of power output (up to 19%) has been observed on the series resistance of the solar photovoltaic module in the temperature range of 320–332 K. With increasing temperature, the loss of generated power on the shunt resistance grows sublinearly. The efficiency of the solar photovoltaic module decreases from 7.95 to 7.65% and has a coefficient of temperature dependence of efficiency, which decreases from ≈ –0.029%/K to ≈ –0.046%/K.
关键词： shunt resistance,series resistance,efficiency,temperature,open-circuit voltage,fill factor,solar photovoltaic module,amorphous hydrogenated silicon,short-circuit current
更新于2025-09-11 14:15:04