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[IEEE 2019 IEEE CHILEAN Conference on Electrical, Electronics Engineering, Information and Communication Technologies (CHILECON) - Valparaiso, Chile (2019.11.13-2019.11.27)] 2019 IEEE CHILEAN Conference on Electrical, Electronics Engineering, Information and Communication Technologies (CHILECON) - Fourier-Bessel Shapes in Output Photocurrents and Frequency Chirping Effects from Laser Fields
摘要： Record low values in this material system of threshold current density, particularly at elevated temperature, are presented for InP quantum dot lasers. Lasers with Ga0 .5 8 In0 .4 2 P in the dot upper con?ning layer have the lowest threshold current densities, 138 A·cm?2 at 300 K, and 235 A·cm?2 at 350 K (77 °C) (2-mm lasers, uncoated facets). Gain-current density data suggests laser performance with an upper con?ning layer of Gax In1 ?xP with x = 0.54, 0.56 or 0.58 would be similar if not for the very low internal optical mode loss, αi of samples with x = 0.56 and 0.58. Gain measurements at ?xed inversion level suggest that increasing x content in Gax In1 ?xP increases gain at ?xed inversion level but samples with x = 0.54 also exhibit reduced recombination current density. The increasing recombination current density at elevated temperature due to thermal carrier spreading is signi?cantly reduced in samples with x = 0.56 and x = 0.58 but measurements at common operating points attribute this largely to the reduced αi for these samples and given the same αI , samples with x = 0.54, 0.56 and 0.58 would all bene?t from reduced effects due to thermal carrier spreading compared to x = 0.52.
关键词： Quantum dot devices,InP self-assembled quantum dots,semiconductor laser,short wavelength lasers,threshold current density,temperature sensitivity
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE Pulsed Power & Plasma Science (PPPS) - Orlando, FL, USA (2019.6.23-2019.6.29)] 2019 IEEE Pulsed Power & Plasma Science (PPPS) - Auto-collimation and monitoring of laser beam in high power electron-pumped KrF laser facility
摘要： Record low values in this material system of threshold current density, particularly at elevated temperature, are presented for InP quantum dot lasers. Lasers with Ga0 .5 8 In0 .4 2 P in the dot upper con?ning layer have the lowest threshold current densities, 138 A·cm?2 at 300 K, and 235 A·cm?2 at 350 K (77 °C) (2-mm lasers, uncoated facets). Gain-current density data suggests laser performance with an upper con?ning layer of Gax In1 ?xP with x = 0.54, 0.56 or 0.58 would be similar if not for the very low internal optical mode loss, αi of samples with x = 0.56 and 0.58. Gain measurements at ?xed inversion level suggest that increasing x content in Gax In1 ?xP increases gain at ?xed inversion level but samples with x = 0.54 also exhibit reduced recombination current density. The increasing recombination current density at elevated temperature due to thermal carrier spreading is signi?cantly reduced in samples with x = 0.56 and x = 0.58 but measurements at common operating points attribute this largely to the reduced αi for these samples and given the same αI , samples with x = 0.54, 0.56 and 0.58 would all bene?t from reduced effects due to thermal carrier spreading compared to x = 0.52.
关键词： Quantum dot devices,InP self-assembled quantum dots,semiconductor laser,short wavelength lasers,threshold current density,temperature sensitivity
更新于2025-09-19 17:13:59
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[IEEE 2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Guangzhou, China (2019.5.19-2019.5.22)] 2019 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A Circularly Polarized Waveguide Slot Antenna for Random Array Application
摘要： Record low values in this material system of threshold current density, particularly at elevated temperature, are presented for InP quantum dot lasers. Lasers with Ga0.58In0.42P in the dot upper con?ning layer have the lowest threshold current densities, 138 A·cm?2 at 300 K, and 235 A·cm?2 at 350 K (77 °C) (2-mm lasers, uncoated facets). Gain-current density data suggests laser performance with an upper con?ning layer of GaxIn1?xP with x = 0.54, 0.56 or 0.58 would be similar if not for the very low internal optical mode loss, αi of samples with x = 0.56 and 0.58. Gain measurements at ?xed inversion level suggest that increasing x content in GaxIn1?xP increases gain at ?xed inversion level but samples with x = 0.54 also exhibit reduced recombination current density. The increasing recombination current density at elevated temperature due to thermal carrier spreading is signi?cantly reduced in samples with x = 0.56 and x = 0.58 but measurements at common operating points attribute this largely to the reduced αi for these samples and given the same αI, samples with x = 0.54, 0.56 and 0.58 would all bene?t from reduced effects due to thermal carrier spreading compared to x = 0.52.
关键词： Quantum dot devices,InP self-assembled quantum dots,semiconductor laser,short wavelength lasers,threshold current density,temperature sensitivity
更新于2025-09-19 17:13:59