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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - New Silicon Crystals for a Redefined Kilogram and Mole: Isotopic Composition of the First Two Crystals
摘要： The isotopic compositions (molar mass, M) of the first and new silicon crystals highly enriched in 28Si (> 99.99 %) used for the determination of the Avogadro constant were measured using a high resolution multicollector ICP mass spectrometer and applying a modified isotope dilution mass spectrometry technique. Relative uncertainties urel(M) < 1 × 10-9 were obtained: a reduction by almost three orders of magnitude in ten years. This study compares the homogeneities in M(Si) of the first “AVO28” crystal and the first crystal (Si28-23Pr11) of the “Kilogram-2” project.
关键词： isotopic composition,enriched silicon,Avogadro constant,mass spectrometry,“Kilogram-2” project,homogeneity
更新于2025-09-10 09:29:36
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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Development of a Specialized Hydrostatic Comparator for the Accurate Density Determination of Natural Silicon Spheres: A Novel Method for a Primary Realization of the Unit Kilogram
摘要： A novel method to primary realize the soon-to-be redefined unit of mass, kilogram, is presented. The new approach will accurately relate the Planck constant to spheres manufactured from natural silicon. Therefore, the precisely known isotopical composition of a 28Si sphere will be transferred to a sphere made of natural silicon with a relative uncertainty of 3 x 10-8. To achieve this objective, the concept of a newly developed hydrostatic comparator, which combines the Archimedes principle with a magnetic suspension coupling, is discussed. This combination allows to improve the major uncertainty contribution of this type of instrument — the temperature stability.
关键词： silicon spheres,magnetic suspension coupling,Avogadro constant,hydrostatic weighing,Planck constant,kilogram
更新于2025-09-10 09:29:36
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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Nano - Microscale Electrical Characterization of Copper Thru Silicon Vias in 3D Stacked Integrated Circuits
摘要： This paper describes the implementation of techniques and systems for different electrical measurements operating at nano and micro scales for the electrical characterization of copper filled Thru Silicon Vias used for 3D integrated circuits interconnects and defect detection in such vias.
关键词： nanoscale,3D integrated circuits,scanning microwave,thru silicon via,setup,atomic,electrical measurement,microscope,force,microscale,four-probe
更新于2025-09-10 09:29:36
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[IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Comparison of Lattice Spacing Between Crystals by the Self-Referenced Lattice Comparator
摘要： The Lattice comparison measurements between crystals were improved and performed by the Self-Referenced Lattice Comparator (SRLC). The relative difference of lattice spacing for the samples cut from the same ingot (AVO28) was in good agreement with that calculated from the difference of their impurity concentrations. The relative difference of lattice spacing for the samples from the different ingots (AVO28 and Si28-23Pr11) was re-evaluated for checking the consistency in the realization of the kilogram.
关键词： silicon,lattice comparator,lattice spacing,Avogadro constant
更新于2025-09-10 09:29:36
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P-1.9: Characterization of Self-Aligned Top-Gate Microcrystalline Silicon Thin Film Transistors
摘要： Self-aligned top-gate microcrystalline silicon (μc-Si) thin film transistors (TFTs) are fabricated and characterized. By replacing high-temperature SiO2 with low-temperature SiO2, the performance of self-aligned top-gate μc-Si TFTs can be greatly improved due to the prevention of hydrogen diffusion into the air. The bridged grain (BG) structure is successfully applied to self-aligned top-gate μc-Si TFTs for the first time. By employing the BG doping inside the channel, all device characteristics are improved in self-aligned top-gate μc-Si TFTs.
关键词： Microcrystalline silicon,bridged grain,thin film transistors,self-aligned
更新于2025-09-10 09:29:36
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[Lecture Notes in Electrical Engineering] Advances in Signal Processing and Communication Volume 526 (Select Proceedings of ICSC 2018) || Mole Fraction Dependency Electrical Performances of Extremely Thin SiGe on Insulator Junctionless Channel Transistor (SG-OI JLCT)
摘要： In this paper, the single-gate junctionless (JL) MOSFET with extremely thin silicon germanium (SiGe) device layer on insulator (ETSG-OI) is explored to identify the short channel effects (SCEs) and electrical behavior of the device. The device incorporates various engineering schemes (channel and spacer engineering scheme) with JL topology on SOI platform. The in?uence of the SiGe device layer with mole fraction (x) variation (x (cid:2) 0.25, 0.5, 0.75) is investigated to understand the bandgap differences of the device. Depending on the change in Ge mole fraction, the energy potential, electric ?eld, and drain induced barrier lowering (DIBL) performances are analyzed. From the simulation results at x (cid:2) 0.25, the ETSG-OI JLCT shows reasonable improvement in ON current (I ON) and DIBL at both linear and saturation drain voltages. For different values of x, the energy bandgap tends to vary from 0.6?1.1 eV. It is observed that at x (cid:2) 0.25 the bandgap is 0.8 eV which is almost near to the bandgap of Si material due to the 25% existence of Ge material.
关键词： Electrical performances,Silicon germanium,Drain induced barrier lowering,I ON-I OFF,Junctionless MOSFET
更新于2025-09-10 09:29:36
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[Lecture Notes in Electrical Engineering] Advances in Signal Processing and Communication Volume 526 (Select Proceedings of ICSC 2018) || Analysis of Graphene/SiO2/p-Si Schottky Diode by Current–Voltage and Impedance Measurements
摘要： We explore the electrical properties of graphene–silicon dioxide–p–silicon Schottky junction diode using current–voltage characteristics and impedance analysis. Ideality factor, recti?cation ratio, and series resistance are extracted from the experimental data. A linear response of series resistance of graphene/SiO2/p-Si Schottky diode is observed with respect to change in forward bias voltage from 0 to 2 V.
关键词： Silicon,Schottky diode,Impedance analysis,Graphene
更新于2025-09-10 09:29:36
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13.1: <i>Invited Paper:</i> Single-Photon-Capable Detector Arrays in CMOS-Exploring a New Tool for Display Metrology
摘要： The technology of CMOS-compatible Single Photon Avalanche Diodes is evolving rapidly and has matured to the point at which imaging it can address applications. In this report we consider the current suitability and future potential of CMOS-compatible Single Photon Avalanche Diodes to address the particular application of display metrology.
关键词： Display Metrology,dSiPM,Quanta Image Sensor,CMOS,QIS,Complementary Metal Oxide Semiconductor,Digital Silicon Photo-Multiplier,Single Photon Avalanche Diode,SPAD
更新于2025-09-10 09:29:36
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[IEEE 2018 IEEE 3rd Optoelectronics Global Conference (OGC) - Shenzhen, China (2018.9.4-2018.9.7)] 2018 IEEE 3rd Optoelectronics Global Conference (OGC) - Non-volatile Optical Switch Based on a GST-Loaded Directional Coupler
摘要： We present a non-volatile optical switch based on a directional coupler comprising a silicon-Ge2Sb2Te5 (GST) hybrid waveguide. The non-volatility of GST makes it attractive for reducing static power consumption in optical switching. Experimental results show that the optical switch has an extinction ratio of >20 dB in the bar state and >25 dB in the cross state around 1578 nm wavelength. The insertion loss is 2 dB and 7 dB for the bar and cross states, respectively.
关键词： directional coupler,silicon photonics,phase change material
更新于2025-09-10 09:29:36
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[IEEE 2018 14th International Conference on Advanced Trends in Radioelecrtronics, Telecommunications and Computer Engineering (TCSET) - Lviv-Slavske (2018.2.20-2018.2.24)] 2018 14th International Conference on Advanced Trends in Radioelecrtronics, Telecommunications and Computer Engineering (TCSET) - Special features of structural design for a fiber-optic microdisplacement transducer
摘要： In this paper, we describe the design of a fiber-optic pressure sensor and the principle of operation. The principle of operation of fiber-optic pressure sensors is as follows. From the radiation source, the light flux along the supply optical fibers is directed to the side of the membrane at an angle, the value of which is selected from the condition of ensuring the maximum sensitivity of the conversion and the depth of modulation of the optical signal. Under the influence of controlled pressure, the membrane deflects, and in the central part the gap between the membrane and the bevelled ends of the optical fibers will be less than the initial value X0. As a result, the reflectivity for electromagnetic waves in the region of the chamfered ends of the optical fibers changes, and accordingly the intensity of the light flux reflected at an angle from the given region, which carries information about the measured pressure and arrives along the diverting optical fibers to the radiation receiver, changes. The optical system of a fiber-optic pressure sensor is calculated, which consists in determining a number of fiber-optic micro-displacement design parameters the MathCAD transducer. Mathematical modeling environment was carried out. Based on the results of mathematical modeling, a new design solution has been proposed for a fiber-optic micro-displacement transducer, in which the incoming and outgoing optical fibers are cut off and located at a calculated angle. The function of converting a fiber-optic micro-displacement transducer is defined. The selected parameters ensure the fulfillment of the conditions for reducing the temperature and dynamic errors, increasing the sensitivity of the optical signal conversion while reducing the mass-dimensional characteristics of the fiber-optic pressure sensor.
关键词： silicon membrane,transformation function,optical fiber,fiber-optic sensor,fiber-optic transducer
更新于2025-09-10 09:29:36