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Effect of porous silicon substrate on structural, mechanical and optical properties of MOCVD and ALD ruthenium oxide nanolayers
摘要： Ruthenium oxide (RuO2) has received significant attention in recent years for its photocatalytic properties and photoelectrochemical (PEC) performance. In the present research, RuO2 nanolayers were grown on n-type porous silicon (PSi) by metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). The morphology, mechanical and optical properties of produced nanostructures were studied by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, diffuse reflectance and photoluminescence (PL) spectroscopy. It was shown that that MOCVD gives non-uniform distribution of RuO2 along the pore and it is deposited mainly in the near-surface of PSi, while distribution of ruthenium obtained by ALD looks conformal over the entire pore. The mean size of RuO2 nanocrystallites and mechanical stresses were determined by TEM, XRD and Raman spectroscopy. It was demonstrated that samples obtained by ALD demonstrate a good crystallinity, while crystalline phase for samples produced by MOCVD improve with RuO2 layer thickness increasing. It was established the formation of hydrated RuO2 during ALD and MOCVD. It was shown that the samples produced by MOCVD have slightly higher electrical conductivity than ALD samples. The average value of energy gap (Eg) for samples prepared by MOCVD depended on the number of injections. RuO2 nanolayers quenched intrinsic PL from the PSi matrix. The correlation between structural, optical, and mechanical properties of samples produced by MOCVD and ALD was discussed.
关键词： MOCVD.,ruthenium oxide,ALD,porous silicon
更新于2025-09-10 09:29:36
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Synthesis of nanosized SiC by low-temperature magnesiothermal reduction of nanocomposites of functionalized carbon nanotubes with MCM-48
摘要： Silicon carbide synthesis by a magnesiothermal method was investigated using MCM-48 as the silica source mechanically mixed with carbon nanotubes (CNTs) as the carbon source, and nanocomposites of MCM-48/functionalized CNTs (CNTF). SiC syntheses were carried out with different molar ratios of MCM-48, carbon and magnesium at 700?C in argon. The MCM-48 and carbon nanotube starting materials and the SiC products were characterized by BET, XRD, FESEM, EDX and TEM. The effect of the carbon content and the type of CNTs (either functionalized or unfunctionalized) on the SiC synthesis was studied. The results show that an improved yield of SiC is obtained when the carbon nanotubes are functionalized, producing a better contact with the MCM-48. This improved contact between the reactants ensures a good degree of reaction in a stoichiometric mixture of silicon and carbon, with no improvement in product formation being achieved by the use of additional carbon. These findings suggest that the degree of contact between reactants is an important factor in the magnesiothermal synthesis of SiC. The SiC products from magnesiothermal synthesis of the functionalized nanocomposite precursors were shown by TEM and FESEM to have unusual nanofiber morphologies mimicking the morphology of the CNTF nanotubes.
关键词： MCM-48,Silicon carbide,Magnesiothermal synthesis,Carbon nanotubes,Functionalized carbon nanotubes
更新于2025-09-10 09:29:36
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[ASME ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - San Francisco, California, USA (Monday 27 August 2018)] ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems - Design and Calibration of Resistive Stress Sensors on 4H Silicon Carbide
摘要： Stress sensors have shown potential to provide “health monitoring” of a wide range of issues related to packaging of integrated circuits, and silicon carbide offers the advantage of much higher temperature sensor operation with application in packaged high-voltage, high-power SiC devices as well as both automotive and aerospace systems, geothermal plants, and deep well drilling, to name a few. This paper discusses the theory and uniaxial calibration of resistive stress sensors on 4H silicon carbide (4H-SiC) and provides new theoretical descriptions for four-element resistor rosettes and van der Pauw (VDP) stress sensors. The results delineate the similarities and differences relative to those on (100) silicon: resistors on the silicon face of 4H-SiC respond to only four of the six components of the stress state; a four-element rosette design exists for measuring the in-plane stress components; two stress quantities can be measured in a temperature compensated manner. In contrast to silicon, only one combined coefficient is required for temperature compensated stress measurements. Calibration results from a single VDP device can be used to calculate the basic lateral and transverse piezoresistance coefficients for 4H-SiC material. Experimental results are presented for lateral and transverse piezoresistive coefficients for van der Pauw structures and p- and n-type resistors. The VDP devices exhibit the expected 3.16 times higher stress sensitivity than standard resistor rosettes.
关键词： silicon carbide,temperature compensated,piezoresistive coefficients,van der Pauw,stress sensors
更新于2025-09-10 09:29:36
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Scratching of silicon surfaces
摘要： Nanoscale scratching of silicon surfaces is the elementary abrasive event for various machining techniques including fixed abrasive wiresaw slicing, grinding, elliptical ultrasonic cutting and single-point diamond turning. The understanding of this process is essential for improving the surface quality and reducing sub-surface damage. Nanoscratching experiments are performed using a well characterized diamond tip geometry. The finite element method is employed in order to simulate the scratching process with a continuum constitutive model developed for phase transformation in silicon (Budnitzki, M., Kuna, M., 2016. Stress induced phase transitions in silicon. JMPS 95, 64–91). The required material parameters were determined from indentation experiments in a (111) single crystal Si wafer. The simulation results agree very well with data from scratch experiments without requiring additional calibration.
关键词： silicon,scratching,phase transition,grinding,wiresawing,simulation
更新于2025-09-10 09:29:36
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High-rate deposition of silicon films in a magnetron discharge with liquid target
摘要： Silicon coatings have been deposited on substrates made of low-carbon and high-carbon steels and tungsten in a magnetron discharge with liquid target at substrate bias voltages ranging from +100 V to -600 V. The structure of obtained coatings was examined by a scanning electron microscopy. The strong influence of substrate bias voltage on the coating structure was observed. The corrosion resistance of coated steel samples was examined in concentrated sulphuric, hydrochloric and nitric acids and their solutions. The resistance of coated tungsten samples against high-temperature oxidation was examined by their exposure to O2 gas at a pressure of 0.2 Pa and a temperature of 1073 K. The coatings deposited under bias voltages of +100 V and -600 V had dense structures and showed the best protective properties among all deposited coatings.
关键词： high-temperature oxidation,silicon coatings,liquid target,corrosion resistance,magnetron discharge
更新于2025-09-10 09:29:36
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The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline silicon
摘要： The influence of different melt streams on the distribution of phosphorus in multi-crystalline silicon ingot was studied. Phosphorus-doped multi-crystalline silicon (mc-Si) ingots were directionally solidified using travelling magnetic fields (TMF) to alter axial phosphorus profiles. Resistivity distributions in the crystallized n-type ingots were measured along the ingot length. Different Lorentz forces were applied in order to enhance melt stirring and with that to transport phosphorus more rapid towards the melt surface. A new rectangular setup was developed, which enables simultaneous directional solidification of 4 G0-sized mc-Si ingots (80 x 80 x 60 mm3) under the influence of TMF. 900 g ingots with different initial level of phosphorus doping were grown, and dopant concentrations in ingots were related to stirring intensities. The phosphorus evaporation rate significantly affects axial dopant profile of mc-Si material, thus this approach can be used as a powerful tool to control and tailor resistivity distribution along phosphorus-doped mc-Si ingots.
关键词： A1 Directional solidification,A1 Magnetic fields,B1 Semiconducting silicon,B3 Solar cells,A1 Doping
更新于2025-09-10 09:29:36
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Precise sputtering of silicon dioxide by argon cluster ion beams
摘要： In this work, the sputtering yields of SiO2 by the argon cluster ion beam with incident angles 0° and 45° have been studied experimentally. The kinetic energy of the primary cluster ions was in the range of E = 5–23.5?keV, and the mean cluster size was Nmean = 100–1000 atom/cluster. It is found that, when the energy per cluster atom quantity E/N is comparable to the binding energy of the solid (of the order of several eV), the yields of atoms sputtered per primary atom Y/N, at the incident angle 45°, is 4 times greater than at normal incidence. Conversely, when energy E/N is significantly above the binding energy of the solid (~ 100?eV), the sputtering yields for the incident angles 0° and 45° have the same values.
关键词： kinetic energy,incident angles,argon cluster ion beam,sputtering yields,cluster size,silicon dioxide
更新于2025-09-10 09:29:36
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Defects and their reduction in Ge selective epitaxy and coalescence layer on Si with semicylindrical voids on SiO<formula><tex>$_{2}$</tex></formula> masks
摘要： Formation of semicylindrical voids on SiO2 masks in Ge layers selectively grown on Si has positive impacts for reduction of threading dislocation density (TDD). Semicylindrical voids are formed through selective epitaxial growth (SEG) and coalescence of SEG Ge layers. A cross-sectional transmission electron microscope (TEM) observation reveals that a threading dislocation (TD) is terminated at a semicylindrical void, resulting in the reduction of TDD. The semicylindrical voids also contribute to the suppression of two-dimensional defects generated at the coalesced interfaces between the SEG Ge layers, which were widely observed in previous reports. Plan-view TEM observations reveal that there are TDs inclined to be parallel to the semicylindrical voids, and plan-view TEM observations show a large (4 μm × 4 μm) TD-free area in the Ge layer with the semicylindrical voids.
关键词： silicon photonics,threading dislocation density,germanium (Ge),semiconductor epitaxial layers,Epitaxial growth
更新于2025-09-10 09:29:36
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Nonlinear process-induced spectral changes in hydrogenated amorphous silicon core optical fibre
摘要： In this paper, the spectral properties of temporal double pulses centred at the same central wavelength and two different central wavelengths are numerically presented based on hydrogenated amorphous silicon core optical fibre. In order to characterise the output spectra of double pulses, the group velocity dispersion and various nonlinear processes including self-phase modulation, cross-phase modulation, two-photon absorption, free carrier absorption and free carrier dispersion are considered in the theoretical model. Numerical results show that, under fixed fibre length condition, the widths of the outcome spectra are strongly dependent on the delay times, peak powers and initial chirps of input double pulses, i.e. widths of the output spectra are proportional to the launched peak powers, and the delay times control the separation between two pulses, resulting in the spectral change within a proper delay time, and the spectral widths are compressed or extended by judiciously adjusting the initial chirps imposed on the input pulses.
关键词： nonlinear processes,optical spectrum,optical fibre,Nonlinear optics,hydrogenated amorphous silicon
更新于2025-09-10 09:29:36
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Optical and Magneto-Optical Properties of Multilayer Nanosized [Co/TiO2]n Films
摘要： The optical and magneto-optical properties of the metal–dielectric multilayer [Co/TiO2]n structures with 2–4-nm-thick layers prepared on a silicon substrate Si(001) by ion-beam deposition have been studied. The complex permittivity of multilayer [Co/TiO2]n structures has been measured by the optical ellipsometry technique in the spectral range of 0.6–5.6 eV and analyzed using the optical reflection matrices for isotropic multilayer dielectric structures taking into account the optical losses and also using the method of anisotropic effective medium. The magneto-optical Kerr effect has been measured by the polarimetric technique in the spectral range of 1.2–4.5 eV in the polar and longitudinal geometries. The magnetic anisotropy type is determined on the base of the field dependences of the magneto-optical Kerr effect. It is found that the nanosized [Co/TiO2]n structures can be considered as artificial optically uniaxial media with a strong magnetic and optical anisotropy at room temperature.
关键词： silicon substrate,Co/TiO2,magneto-optical properties,multilayer nanosized films,optical properties,complex permittivity,magneto-optical Kerr effect,magnetic anisotropy,optical ellipsometry,ion-beam deposition
更新于2025-09-10 09:29:36