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Structure and Permeability of Porous Silicon Investigated by Self-Diffusion NMR Measurements of Ethanol and Heptane
摘要： The adsorption and phase transitions of con?ned ?uids in nanoporous materials have been studied intensely because of both their fundamental interest and their crucial role in many technologies. Questions relating to the in?uence of the con?nement of ?uids, and the disorder or elastic deformation of porous solids on the liquid-gas phase transition are still under debate. Model systems are needed to understand the adsorption phenomenon. In this context, Porous Silicon (PoSi), which is a single crystal obtained by etching a (100) silicon wafer is an excellent candidate. Indeed, it consists of non-connected tubular pores running parallel to the [100] axis perpendicular to the wafer surface, with transverse sections with a polygonal shape of nanometric size whose areas are widely distributed. Once detached from the wafer, free PoSi membranes can be considered a nanoscale disordered honeycomb. Adsorption/desorption experiments have been performed to characterize the structure: they have shown that evaporation occurs collectively, an intriguing observation generally associated with a disordered pore structure with many interconnections through narrow necks. The characterization of ?uid mobility inside the pores should give complementary information about the pore structure and topology. This paper focuses on the dynamics of a ?uid con?ned inside the structure of porous silicon, and in particular the self-diffusion measurements (pulsed ?eld gradient spin echo Nuclear Magnetic Resonance (NMR)). The results show a strong anisotropy of the self-diffusion tensor, as expected in this highly anisotropic structure. However, a non-zero self-diffusion in the directions perpendicular to the pore axis is observed. In order to interpret these puzzling results, molecular and Brownian dynamics calculations are underway.
关键词： Ethanol,Porous Silicon,Permeability,Heptane,Self-Diffusion NMR
更新于2025-09-09 09:28:46
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UV distributed Bragg reflectors build from porous silicon multilayers
摘要： UV Distributed Bragg reflectors were fabricated by a two-step thermal oxidation process over porous silicon multilayers (PS-ML), which were prepared by room-temperature electrochemical anodization of silicon wafers. The optical behavior of the PS-ML before and after oxidation was studied by reflectance measurements. It was observed an UV shift from 430 to 300 nm in the peak of the reflectance spectrum after oxidation of the PS-ML. This was attributed to the presence of silicon oxide over the surface of the silicon filaments. Such oxide also reduced the refractive index of each porous silicon monolayer. The bandgap of the PS-ML was calculated by the Kubelka-Munk approximation, which showed an increase in the bandgap from 3.11 to 4.36 eV after the thermal oxidation process. It was suggested that the observed optical response could opens the possibility of fabrication of UV optoelectronic devices based entirely in the silicon technology.
关键词： Porous silicon,thermal oxidation,multilayers,ultraviolet (UV)
更新于2025-09-09 09:28:46
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HIGH FREQUENCY ELECTRICAL CHARACTERIZATION OF 3D SIGNAL/GROUND THROUGH SILICON VIAS
摘要： 3D integration using through-silicon-vias (TSVs) is gaining considerable attention due to its superior packaging e?ciency resulting in higher functionality, improved performance and a reduction in power consumption. In order to implement 3D chip designs with TSV technology, robust TSV electrical models are required. Speci?cally, due to the increase of signal speeds into the gigahertz (GHz) spectrum, a high frequency electrical characterization best describes TSV behavior. In this letter, 5 × 50 μm TSVs are manufactured using a via-mid integration scheme and characterized using S-parameters up to 65 GHz. At 50 GHz, the measured attenuation constant is 0.35 dB/via with a time delay of 0.7 ps/via.
关键词： time delay,3D integration,attenuation constant,through-silicon-vias (TSVs),S-parameters,high frequency electrical characterization
更新于2025-09-09 09:28:46
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[IEEE 2018 20th International Conference on Transparent Optical Networks (ICTON) - Bucharest (2018.7.1-2018.7.5)] 2018 20th International Conference on Transparent Optical Networks (ICTON) - Nonlinear Optical Phenomena in Silicon-Smectic A Liquid Crystal (SALC) Waveguiding Structures
摘要： Liquid crystals (LCs) are organic materials characterized by a certain degree of ordering and anisotropy in their fluido-dynamic, elastic and electromagnetic properties. LCs possess strong optical nonlinearity. Due to these unique properties, LCs are promising candidates for the development of novel integrated devices for telecommunications and sensing. Nematic liquid crystals (NLCs) are mostly used and studied. However, smectic A liquid crystals (SALCs) have a higher degree of long range order, lower scattering losses in SALC, and they can be useful in nonlinear optical applications. We theoretically studied the nonlinear optical phenomena in a Silicon-SALC waveguide. We have shown that the strong stimulated light scattering (SLS) caused by SALC nonlinearity can occur in the Silicon-SALC waveguide.
关键词： silicon photonics,optical waveguide,stimulated light scattering,smectic A liquid crystal (SALC)
更新于2025-09-09 09:28:46
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Porous Silicon Bragg Reflector/Carbon Dot Hybrids: Synthesis, Nanostructure, and Optical Properties
摘要： Carbon dots (C-dots) exhibit unique fluorescence properties, mostly depending upon their physical environments. Here we investigate the optical properties and nanostructure of Carbon dots (C-dots) which are synthesized in situ within different porous Silicon (PSi) Bragg reflectors. The resulting hybrids were characterized by photoluminescence, X-ray photoelectron, and Fourier Transform Infrared spectroscopies, as well as by confocal and transmission electron microscopy. We show that by tailoring the location of the PSi Bragg reflector photonic bandgap and its oxidation level, the C-dots emission spectral features can be tuned. Notably, their fluorescence emission can be significantly enhanced when the high reflection band of the PSi host overlaps with the confined C-dots’ peak wavelength, and the PSi matrix is thermally oxidized at mild conditions. These phenomena are observed for multiple compositions of PSi Bragg reflectors/C-dots hybrids.
关键词： optical properties,fluorescence,Fabry–Pérot,Bragg reflectors,porous silicon,photoluminescence,carbon dots
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE 3rd Optoelectronics Global Conference (OGC) - Shenzhen, China (2018.9.4-2018.9.7)] 2018 IEEE 3rd Optoelectronics Global Conference (OGC) - Domestically Designed Integrated Silicon-Based Module for Coherent Optical Transmission Network
摘要： A line card with low power silicon-based module is demoed on current commercial network by Shanghai Telcom. This is China’s first domestically designed silicon-based module in coherent transmission systems. This module has an excellent performance. All key parameters passed the test requirements of Nx100Gbit/s optical wavelength division multiplexing systems and shows a more than 6-watt power consumption reduction.
关键词： silicon photonics,inhouse design,coherent optical transmission network
更新于2025-09-09 09:28:46
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Ultrafast optical control of multiple coherent phonons in silicon carbide using a pulse-shaping technique
摘要： We demonstrated ultrafast optical control of multiple coherent phonons in silicon carbide (SiC) using a pulse-shaping technique combined with sub-10-fs optical pulses and a two-dimensional spatial light modulator. Because our technique produces a pulse train with the desired number of pulses and time intervals, precise manipulation of the amplitudes of the zone-folded optical and acoustic phonon modes could be achieved simultaneously and was well reproduced by a model calculation assuming the two modes are excited independently by each pulse. These results show that our scheme can provide high controllability of multiple phonon modes in SiC.
关键词： pulse-shaping technique,coherent phonons,ultrafast optical control,silicon carbide
更新于2025-09-09 09:28:46
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The Variation of Crystalline Structure Induced by Gas Dilution and Thermal Annealing in Silicon Layers Deposited by PECVD Technique
摘要： We prepared hydrogenated thick silicon film by plasma enhanced chemical vapor deposition (PECVD) method using SiH4 and H2 gas mixture and we investigated the effect of the hydrogen dilution ratio defined as R = H2/SiH4 on the as-deposited and annealed films. With increase in hydrogen dilution ratio, amorphous to microcrystalline transition has been observed. The crystallization has been confirmed from Raman spectroscopy, UV reflectance, low angle X-ray diffraction (XRD), spectroscopic ellipsometry and atomic force microscopy (AFM) analysis. Tauc band gap shows a decreasing trend with increasing H2 dilution of silane. It decreases from 1.8 to 1.57 eV. It has been concluded that H2 dilution of silane in PECVD enhances the crystallinity of the film and affects its optical and structural properties.
关键词： Silicon nanocrystallites,Hydrogen dilution,Thermal annealing,PECVD,Crystallization
更新于2025-09-09 09:28:46
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Towards the lowest-energy limit for light ions identification with silicon pixel-type detectors
摘要： An in-beam test of two pixel-type silicon detectors of the TRACE detector project has been performed at Laboratori Nazionali di Legnaro (Italy). The aim was to investigate the lowest kinetic energy values at which isotopic identification of heavy-ion reactions products with mass A ～ 10 is possible, by using a single-layer silicon detector. Two separate read-out chains, analog and digital, were used, and the Pulse Shape Analysis technique was employed to obtain the particle identification matrices for the digitally processed data. The results confirmed the high capability of the Pulse Shape Analysis method which can be used for light ion identification, with performances similar to the analog approach. Separation in both charge and mass was obtained for Li and Be isotopes, however, the presence of a significant background from alpha particles severely limited the data analysis in the lower energy region. Due to this effect, the identification of the light products (7,6Li isotopes) could be possible down to ～ 24.5 MeV only, while the 9,7Be isotopes were separable down to ～ 29 MeV. This gives the value of < 4 MeV/nucleon as the lowest kinetic energy for light products identification by using the pixel-type detectors of the TRACE project, in the present experimental conditions.
关键词： isotopic identification,TRACE detector project,silicon detectors,light ions identification,Pulse Shape Analysis
更新于2025-09-09 09:28:46
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(111)Si thin layers detachment by stress-induced spallation
摘要： In this work, results of controlled detachment of (111) silicon by stress induced spalling (SIS) process, which is based on a gluing on a metallic stressor layer by an epoxy adhesive on top of a silicon substrate, are presented. It is shown that silicon foils mainly (1x1) cm2 with different thicknesses (~50-170 μm) can be successfully detached using different materials (steel, copper, aluminum, nickel and titanium) as stressor layers with thicknesses ~50-500 μm. Such detachment can be realized by dipping of a stressor/glue/silicon wafer based structure into liquid nitrogen. As a result, Si foils with different thicknesses from ~50 μm to ~170 μm can be detached. An analytical and numerical approaches based on principles of linear elastic fracture mechanics is developed and they are shown that such approaches can predict general trends and conditions for the detachment of silicon foils with desired thicknesses using a stressor layer. Raman spectroscopy analysis of the residual stresses in detached silicon foils shows, that tensile stresses (up to - 36MPa) as well as higher value compressive stresses (up to ~444 MPa) are present in such foils. Moreover, optical and scanning electron microscopy (SEM) measurements show that surface of the detached foils exhibits some periodic lines originated by stresses.
关键词： Exfoliation of silicon,Thermal stress,Raman spectroscopy,Kerf-free,photovoltaics (PV)
更新于2025-09-09 09:28:46