- 标题
- 摘要
- 关键词
- 实验方案
- 产品
过滤筛选
- 2019
- 2018
- JBSFET
- Robustness
- MOSFET
- Reliability
- Silicon Carbide
- 4H-SiC
- Failure Mechanism
- Short Circuit
- Ruggedness
- silicon photonics
- Electrical Engineering and Automation
- Optoelectronic Information Science and Engineering
- Electronic Science and Technology
- North Carolina State University
- MediaTek, Inc.
- JCET STATS ChipPAC Pte. Ltd.
-
<i>(Invited)</i> Characterization of UV Excitation Accelerated Material Changes on as-Grown SiC Epitaxial Layers and Their Impact on Defect Detection
摘要： Both visible defects and crystal defects in Silicon Carbide (SiC) epitaxial layers are being scanned and identified by in-line production systems. All the modern detection systems use Ultra-Violet (UV) light exposure on the wafers followed by signal capture from topographic and photoluminescence (PL) channels. The repeatability and consistency of these measurements becomes very critical for both determining the quality and yield of the wafers and screening potential affected die for reliability issues. In this work, we present the effects of repeated and long-term UV exposure on the SiC wafers. We document the loss of measurement repeatability and determine the cause for this as a highly accelerated growth of a thin oxide layer. We further offer techniques to recover from this mechanism and offer a way to prevent this from happening. The results are further verified by recreating this mechanism and observing similar effects.
关键词： photoluminescence,UV excitation,epitaxial layers,Silicon Carbide,defect detection
更新于2025-09-23 15:21:21
-
Mechanism of Liquid-Phase Reductive Thin-Film Deposition under Quasiballistic Electron Incidence
摘要： Highly reducing activity of quasiballistic hot electrons emitted from a nanocrystalline silicon (nc-Si) diode is veri?ed in terms of liquid-phase thin ?lm deposition. Incident electrons reduce positive ions in salt solutions coated on a target substrate, and then result in deposition of thin metal (Cu) and semiconducting (Si, Ge, and SiGe) ?lms. This mechanism is investigated here throughout the process from electron incidence to thin ?lm deposition. Thermodynamic criterion deduced from classical nucleation theory suggests that the output electron energy of the nc-Si emitter is suitable for promoting preferential reduction of target ions in solutions leading to the nuclei formation. In accordance with mass-transport analyses on generated nanoclusters, the most primary factor of thin ?lm growth is the dose of incident electron. The formulated deposition rate rapidly increases and reaches a stationary value within 0.1 s after electron incidence. The theoretical dependency of the thin ?lm thickness on the electron incidence time is consistent with the experimental results. Speci?c features of this scheme as an alternative approach for thin ?lm deposition are discussed in comparison with the conventional dry and wet processes.
关键词： nanocrystalline silicon diode,quasiballistic hot electrons,mass-transport analyses,thermodynamic criterion,liquid-phase thin film deposition
更新于2025-09-23 15:21:21
-
Experimental Optimization of Annular Polishing Parameters for Silicon Carbide
摘要： Machined surface quality has a strong impact on the functionality of silicon carbide-based components and devices. In the present work, we ?rst analytically investigate the complex coupling of motions in annular polishing based on the Preston equation, which derives the in?uential parameters for material removal. Subsequently, we conduct systematic annular polishing experiments of reaction-bonded silicon carbide to investigate the in?uence of derived parameters on polished surface quality, which yield optimized polishing parameters for achieving ultralow surface roughness of reaction-bonded silicon carbide.
关键词： silicon carbide,polishing parameters,annular polishing,Preston equation,surface roughness
更新于2025-09-23 15:21:21
-
Optical properties of ZnO deposited by atomic layer deposition (ALD) on Si nanowires
摘要： In this work, we report proof-of-concept results on the synthesis of Si core/ ZnO shell nanowires (SiNWs/ZnO) by combining nanosphere lithography (NSL), metal assisted chemical etching (MACE) and atomic layer deposition (ALD). The structural properties of the SiNWs/ZnO nanostructures prepared were investigated by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopies. The X-ray diffraction analysis revealed that all samples have a hexagonal wurtzite structure. The grain sizes are found to be in the range of 7–14 nm. The optical properties of the samples were investigated using reflectance and photoluminescence spectroscopy. The study of photoluminescence (PL) spectra of SiNWs/ZnO samples showed the domination of defect emission bands, pointing to deviations of the stoichiometry of the prepared 3D ZnO nanostructures. Reduction of the PL intensity of the SiNWs/ZnO with the increase of SiNWs etching time was observed, depicting an advanced light scattering with the increase of the nanowire length. These results open up new prospects for the design of electronic and sensing devices.
关键词： nanosphere lithography (NSL),atomic layer deposition (ALD),Silicon nanowires (SiNWs),metal-assisted chemical etching (MACE),ZnO
更新于2025-09-23 15:21:21
-
Silicon Photomultipliers and SPAD imagers in biophotonics: Advances and perspectives
摘要： Photonics is essential in life science research and the continuous development of methods offers researchers tools of unprecedented sensitivity. Sensors are key to the exploitation of the most advanced biophotonic techniques with highly demanding specifications in terms of single photon sensitivity, time resolution, miniaturization real-time processing and data throughput. Silicon photomultipliers and Single Photon Avalanche Diode (SPAD) imagers represent the state-of-the-art in photon detection with single photon sensitivity, photon number resolving capability and the possibility to integrate on chip advanced functionalities. As a consequence, they can be the platform for the next generation biophotonic instruments and methods. This paper summarises the main biophotonic techniques and reports exemplary applications of Silicon Photomultipliers and SPAD imagers for fluorescence, chemiluminescence, time correlated single photon counting and imaging. Achievements and current limitations are addressed, pointing as well to the most recent technology advances and highlighting the possible pathways for the near future.
关键词： SPAD imagers,Biophotonic techniques,Silicon Photomultipliers
更新于2025-09-23 15:21:21
-
Silicon nitride photonic integration for visible light applications
摘要： In this article, we provide a review of fabrication platforms and state of the art developments in the area of silicon nitride photonic integrated circuits (PICs) for the visible wavelength range, mostly employed in biomedical and chemical sensing applications. Additionally, we introduce PIX4life, the European pilot line for silicon nitride PICs for visible applications. PIX4life provides a unified framework for the development of such PICs, including design and software, fabrication, characterization and packaging.
关键词： Visible light,Silicon nitride,Photonics,Biophotonics,Microscopy,Sensing
更新于2025-09-23 15:21:21
-
Li Permeability Increase in Nano-Sized Amorphous Silicon Layers
摘要： Li permeation through nano-sized amorphous Si layers is investigated for temperatures up to 500°C (773 K) as a function of layer thickness between 12 and 95 nm. For the experiments the Si layers are embedded between 6Li and 7Li isotope enriched oxide based Li reservoirs and the thermally induced isotope exchange (through silicon layers and interfaces) is analyzed by Secondary Ion Mass Spectrometry in order to calculate Li permeabilities. The experiments reveal that the interface between silicon and the Li metal oxide does not hinder Li permeation and Li diffusion in silicon controls the overall process. The determined Li permeability increases drastically by orders of magnitude with decreasing silicon layer thickness, accompanied by a decrease in the activation enthalpy of Li permeation. These results can be explained by a gradual transition of trap-limited slow Li diffusion at high silicon thicknesses to interstitial fast Li diffusion at low Si thicknesses.
关键词： Li permeation,nano-sized layers,Li permeability,trap-limited diffusion,amorphous silicon,Secondary Ion Mass Spectrometry,isotope exchange,interstitial diffusion
更新于2025-09-23 15:21:21
-
Vacuum-free, Room-temperature Organic Passivation of Silicon: towards Very Low Recombination of Micro/Nano-Textured Surface Structures
摘要： Crystalline silicon (c-Si) solar cells remain dominant in the photovoltaic (PV) market due to their cost-effective advantages. However, the requirement for expensive vacuum equipment and the power-hungry thermal budget for surface passivation technology, which is one of the key enablers of the high performance of c-Si solar cells, impede further reductions of costs. Thus, the omission of the vacuum and high-temperature process without compromising the passivation effect is highly desirable due to cost concerns. Here, we demonstrate a vacuum-free, room-temperature organic Nafion thin-film passivation scheme with an effective minority carrier lifetime (τeff) exceeding 9 ms on an n-type c-Si wafer with a resistivity of 1-5 Ω·cm, corresponding to an implied open circuit voltage (iVoc) of 724 mV and upper-limit surface recombination velocities (SRV) of 1.46 cm/s, which is a level that is in line with the hydrogenated amorphous Si film-passivation scheme used in the current PV industry. We find that the Nafion film passivation of Si can be enhanced in an O2 atmosphere and that the Nafion/c-Si interface oxidation should be responsible for the passivation mechanism. This highly effective passivation is also achieved on various micro/nano-textured Si surface structures from actual production, including a pyramidal surface and nanopore-pyramid hybrid structure with nanopores on the inclined plane of the pyramid. We develop an organic Nafion-passivated n-type back-junction Si solar cell to examine application in a real device. The open circuit voltage (Voc) of the solar cell with the Nafion passivation layer achieves a clear improvement (30.8 mV) over those without the passivation layer, resulting in an increase (1.5%) in the power conversion efficiency (PCE). These results suggest the potential use of these organic electronics with current Si microelectronics and a new strategy for the development of vacuum-free, low-temperature Si-based PVs at low cost.
关键词： passivation,Silicon,Nafion thin film,Photovoltaic
更新于2025-09-23 15:21:21
-
Effects of vacancy defects location on thermal conductivity of silicon nanowire: a molecular dynamics study
摘要： The improvement of thermoelectric ?gure of merit of silicon nanowire (SiNW) can be achieved by lowering its thermal conductivity. In this work, non-equilibrium molecular dynamics method was used to demonstrate that the thermal conductivity of bulk silicon crystal is drastically reduced when it is crafted as SiNW and that it can be reduced remarkably by including vacancy defects. It has been found that ‘centre vacancy defect’ contributes much more in reducing the thermal conductance than ‘surface vacancy defect’. The lowest thermal conductivity that occurs is about 52.1% of that of pristine SiNW, when 2% vacancy defect is introduced in the nanowire. The vibrational density of states analysis was performed to understand the nature of this reduction and it has been found that the various boundary scatterings of phonon signi?cantly reduce the thermal conductivity. Also, larger mass difference due to voids induces smaller thermal conductivity values. These results indicate that the inclusion of vacancy defects can enhance the thermoelectric performance of SiNWs.
关键词： molecular dynamics,silicon nanowire,thermoelectric performance,thermal conductivity,vacancy defects
更新于2025-09-23 15:21:21
-
Permittivity and Permeability Characterization of SiC and Ferro Metals for Structural Health Monitoring Utilization
摘要： The need for wireless sensing technology has rapidly increased recently, specifically the usage of electromagnetic waves which becoming more required as a source of information. Silicon carbide (SiC) Nano particles has been used in this study, the material under test (MUT) was exposed directly to a microwave field to examine the electromagnetic behavior. The permittivity and permeability were investigated with different filler materials to approach best and optimal electromagnetic absorbing characteristics to assist engineers to monitor structure-based composite for defects evaluation that may occur during operation conditions or through manufacturing process. XRD, FESEM and both complex permittivity and permeability were measured for the pure materials that candidate for this study. The results showed that all the selected nanostructure material exhibit a good purity with proper electromagnetic properties in the X- band, this can lead to absorbing and transmission properties that can be used in monitoring structures or manufactured part during fabrication process.
关键词： Silicon carbide,electromagnetic waves,structural health monitoring,permittivity,permeability
更新于2025-09-23 15:21:21