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The impacts of LPCVD wrap-around on the performance of n-type tunnel oxide passivated contact c-Si solar cell
摘要： In this paper, Tunnel Oxide Passivated Contact (TOPCon) silicon solar cells with the industrial area (244.32cm2) are fabricated on N-type silicon substrates. Both the ultra-thin tunnel oxide layer and phosphorus doped polycrystalline silicon (polysilicon) thin film are prepared by the LPCVD system. The wrap-around of polysilicon is observed on the surface of borosilicate glass (BSG). The polysilicon wrap-around can form a leakage current path, thus degrades the shunt resistance of solar cells, and leads to the degradation of solar cell efficiency. Different methods are adopted to treat the polysilicon wrap-around and improve shunt resistance of solar cells. The experimental results indicate that a chemical etching method can effectively solve the problem of polysilicon wrap-around and improve the performance of solar cells. Finally, a conversion efficiency of 22.81% has been achieved by our bifacial TOPCon solar cells, with Voc of 702.6 mV, Jsc of 39.78 mA/cm2 and FF of 81.62 %.
关键词： LPCVD,wrap-around,Tunnel oxide passivated contact,polycrystalline silicon thin film
更新于2025-09-23 15:21:01
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Silicon Nanoparticle Films Infilled with Al <sub/>2</sub> O <sub/>3</sub> using Atomic Layer Deposition for Photosensor, Light Emission and Photovoltaic Applications
摘要： Solution-processed thin films of crystalline silicon nanoparticles (Si NPs) have a great potential for a wide variety of electronic and optoelectronic applications. However, such films are inherently unstable due to their huge surface-to-volume ratios and high surface energies, making them prone to degradation associated to spontaneous oxidation in ambient conditions. In this work, we explore the use of atomic layer deposition (ALD) as a means to stabilize and potentially functionalize solution-processed thin films of Si NPs for (opto)electronics e.g. thin-film transistors, photosensors, light-emitting devices, and photovoltaics. We prepared films of randomly distributed Si NPs with ultrashort surface ligands (Si-H termination) using wet-chemistry and spray-coating and then use ALD to infill the films with Al2O3. Through microscopy and optical structural/morphological analysis, we demonstrate the achievability of ALD infilling of films of Si NPs and probe the stability of these films against oxidation. Moreover, we show that the ALD infilling leads to changes in the light emission properties of the Si NP films, including a relative quenching of disorder-related emission features and variations in surface-related dielectric confinement effects. Our studies reveal ALD as a relevant technique toward manufacturing de facto robust, functional nanomaterials based on Si NPs and on nanoscale silicon materials more generally.
关键词： Photoluminescence properties,Nanoparticle film infilling,Silicon nanocrystal films,Air stability,Atomic layer deposition
更新于2025-09-23 15:21:01
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Molybdenum disulfide/silver/p-silicon nanowire heterostructure with enhanced photoelectrocatalytic activity for hydrogen evolution
摘要： Suitable semiconductor and its efficient coupling with catalysts is vital to hydrogen evolution reaction (HER). Herein, Ternary heterostructured MoS2/Ag/p-type silicon nanowires (SiNWs) array photocathode are constructed by a simple two-step method, where Ag is self-reduced on SiNWs via Galvanic Displacement method and MoS2 is subsequently loaded by direct thermal decomposition. Ag interfacial layer is introduced between Si and MoS2 to facilitate the charge transfer and suppress the recombination of photo-generated electron-hole pairs. MoS2/Ag/SiNWs exhibits an onset potential of 62 mV and photocurrent density of 50 mA cm?2 at ?1.0 VRHE, as well as good stability. Besides, MoS2/Ag/SiNWs is capable of generating 325.9 mL hydrogen per minute. The superior HER catalytic activity of MoS2/Ag/SiNWs is contributed to the improved charge transport at the solid–solid interfaces by virtue of Ag layer, allowing more electrons flow from SiNWs to MoS2 and thus effectively separating the photoelectrons and holes. This work demonstrates the potential of novel heterostructure for robust and efficient photoelectrochemical HER.
关键词： Heterostructure,Molybdenum disulfide,Hydrogen evolution,Ag layer,P-type silicon wires array
更新于2025-09-23 15:21:01
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Guidelines for establishing an etching procedure for dislocation density measurements on multicrystalline silicon samples
摘要： With multicrystalline silicon becoming the main material used for photovoltaic applications and dislocations being one of the main material limitations to better solar cell efficiency, etch pit density measurements are gaining more importance. Traditionally, etch pit density measurements are based on selective etching of silicon samples. The majority of the etchants have been developed for monocrystalline samples with known orientation, while those developed for multicrystalline samples have been investigated and might need some optimization. In this study, we use and compare the PVScan tool, which provides a quick way to assess dislocation density on selectively etched samples, and microscope image analysis. We show how the etching methods used for dislocation density measurements can affect the results, and we suggest how to optimize the Sopori etching procedure for multicrystalline silicon samples with high dislocation densities. We also show how the Sopori etchant can be used to substitute Secco while maintaining a high precision of dislocation density measurements, but without the toxic hexavalent chromium compounds.
关键词： Photovoltaic,Etch pit density,Silicon,Secco,Selective etching,EPD,Dislocations,Sopori
更新于2025-09-23 15:21:01
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N-type silicon nanowires prepared by silver metal-assisted chemical etching: Fabrication and optical properties
摘要： This paper reports the fabrication of silicon nanowires (SiNWs) by silver (Ag) metal-assisted chemical etching (MACE) method. N-type Si (100) wafers, doped with phosphorus with the resistivity from 1 ÷ 10 Ω×cm, were selected for sample preparation. Ag particles of about 30 nm in diameter, which were used as the catalytic metal, were aggregated on the surface of the Si wafer immersed in HF (4.6 M) and AgNO3 solution, with the variation concentration of 15–35 mM, for one minute. Consequently, the Si wafers covered with Ag particles were etched in HF (4.8 M) and H2O2 (0.4 M) solution for the formation of vertically aligned SiNWs. We found that the size and density of SiNWs decreased with the increase of AgNO3 concentration. After a delay time of about 30–40 min, the SiNWs growth depended linearly on the etching time. The light emission from the prepared SiNWs observed at room temperature was well resolved with two bands at around 450 nm (~ 2.75 eV) and 700 nm (~ 1.77 eV). The origins of the two emission bands and the comparative aspects are presented and discussed.
关键词： Chemical etching,Silicon nanowires,Photoluminescence,Metal assisted
更新于2025-09-23 15:21:01
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Simulation of 3D-Silicon sensors for the TIMESPOT project
摘要： The experimental conditions in future High Luminosity LHC experiments require new detector systems with increased performances compared to the current state of the art. In this context, increasing spacial resolution and including time measurement with a resolution of less than 50 ps for particle tracking systems can avoid false track reconstruction due to event pileup. For this kind of future tracking detectors the 3D silicon sensor technology appears as a good option. In this context the TIMESPOT initiative was launched. Concerning the development of the sensor, different geometrical solutions have been explored and simulated to optimize the timing response of the single pixel sensor using Sentaurus TCAD. The configuration with the best electric field characteristics for timing was selected for signal simulation. In order to compensate the very time-consuming behavior of TCAD simulations, a faster charge transport simulator with TCAD and Geant4 support is under development. Further sensor configurations, including a first primitive capacitive and resistive load, were also simulated and evaluated. This paper shows a general overview of the project with particular attention to the silicon sensor development. First results are presented.
关键词： Fast timing tracking,3D silicon sensors,Tracking detectors,sensor simulation,TCAD
更新于2025-09-23 15:21:01
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Highly selective and sensitive detection of catechol by one step synthesized highly fluorescent and water-soluble silicon nanoparticles
摘要： Because the chemical properties and structures of catechol and its analogues (hydroquinone and resorcinol) are similar, it still is a great challenge to detect catechol from other hydroxybenzene isomers with high accuracy and reliability. Herein, a selective and sensitive method based on the water soluble silicon nanoparticles (Si NPs) was established for catechol detection, and to the best of our knowledge, this is the first time using Si NPs for catechol measurement. The synthesis of Si NPs was very cheap and simple, no time-consuming, and no need for high temperature processing, or special instrument. The as-synthesized Si NPs, with high salt and temperature stabilities emitted yellow-green fluorescence (540 nm). A good linear relationship was observed from 0.06 to 40 μM and the limit of detection (based on 3s/k) was calculated as 20 nM, and the sensor displayed a significant selectivity toward catechol over other dihydroxybenzene isomers. Moreover, the Si NPs were applied in tap water, human serum samples and Yellow River water for catechol measurement.
关键词： Silicon nanoparticles,Catechol,Fluorescence
更新于2025-09-23 15:21:01
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Demonstration of scalable microring weight bank control for large-scale photonic integrated circuits
摘要： Microring resonators (MRRs) are reconfigurable optical elements ubiquitous in photonic integrated circuits. Owing to its high sensitivity, MRR control is very challenging, especially in large-scale optical systems. In this work, we experimentally demonstrate continuous, multi-channel control of MRR weight banks using simple calibration procedures. A record-high accuracy and precision are achieved for all the controlled MRRs with negligible inter-channel crosstalk. Our approach allows accurate transmission calibration without the need for direct access to the output of the microring weight bank and without the need to lay out electrical and optical I/Os specific for calibration purpose. These features mean that our MRR control approach can be applied to large-scale photonic integrated circuits while maintaining its accuracy with manageable cost of chip area and I/O complexity.
关键词： weight banks,Microring resonators,silicon photonics,photonic integrated circuits,optical control
更新于2025-09-23 15:21:01
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Optical Trapping of Nanoparticles Using All-Silicon Nanoantennas
摘要： The ability to optically trap nanoscale particles in a reliable and noninvasive manner is emerging as an important capability for nanoscience. Different techniques have been introduced, including plasmonic nanostructures. Nano-optical tweezers based on plasmonics face the problem of Joule heating however due to high losses in metals. Here we experimentally demonstrate the optical trapping and transport of nanoparticles using a non-plasmonic approach, namely a silicon nanoantenna. We trap polystyrene nanoparticles with diameters of 20 and 100 nm, and use fluorescence microscopy to track their positions as a function of time. We show that multiple nanoparticles can be trapped simultaneously with a single nanoantenna. We show that the infrared trapping laser beam also produces fluorescent emission from trapped nanoparticles via two-photon excitation. We present simulations of the nanoantenna that predict enhanced optical forces with insignificant heat generation. Our work demonstrates that silicon nanoantennas enable nanoparticles to be optically trapped without deleterious thermal heating effects.
关键词： Optical trapping,silicon nanoantenna,thermal effect,optical force,nanoparticle
更新于2025-09-23 15:21:01
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Analysis of the optical band positions for manganese (IV) ions in trigonal barium titanium hexafluoride and barium silicon hexafluoride crystals
摘要： The optical band positions (or crystal field energy levels) of manganese (IV) ions in trigonal barium titanium hexafluoride and barium silicon hexafluoride crystals are computed from the full diagonalization (of energy matrix) method founded on the two-spin–orbit-parameter model which consists of the effects from both the spin–orbit parameters of dn ion and ligand ions. The computed results are in rational agreement with the experimental values. It is found that the large difference of first excited state splitting DE (2E) between the manganese (IV)-doped barium titanium hexafluoride and barium silicon hexafluoride crystals is owing mainly to the great difference of trigonal distortion between the fluorine octahedral clusters in the two host crystals.
关键词： barium titanium (silicon) hexafluoride [BaMF6 (M ? Ti; Si)],manganese (IV),diagonalization method,crystal- and ligand-field theory,optical spectra
更新于2025-09-23 15:21:01