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Small scale optimization in crystalline silicon solar cell on efficiency enhancement of low-concentrating photovoltaic cell
摘要： Compared with conventional silicon solar cell, concentrating photovoltaic cell has a higher incident illumination intensity and non-uniform illumination intensity distribution. There is a close relationship between the illumination intensity and the resistance and shading losses of front metal fingers. In this paper, according to the non-uniformity of the illumination distribution formed by the concentrator, the effects of different finger numbers and spacing on the performance of low-concentrating photovoltaic cells were studied. First, low-concentrating photovoltaic cell modules with different finger numbers and spacing were established, and efficiency of these modules was compared to determine the optimal finger numbers and spacing of the front metal fingers. Then, effects of the shading losses, finger resistance and lateral spreading resistance on the performance of the low-concentrating photovoltaic cell were analyzed. Results show that for the specific illumination intensity distribution of the low-concentrating photovoltaic cell when the numbers and spacing of the front metal fingers are optimized, efficiency of the low-concentrating photovoltaic cell can be increased from 13.805% to 13.837%. Additionally, it can be concluded that the optimization of the number and spacing of the front metal fingers in the crystalline silicon solar cell is an efficient way to improve the electrical performance of the concentrating photovoltaic cell.
关键词： Fingers,Enhanced efficiency,low-concentrating photovoltaic (CPV) Cell,crystalline silicon
更新于2025-09-23 15:21:01
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Effect of the anisotropy of etching surface morphology on light-trapping and photovoltaic conversion efficiencies of silicon solar cell
摘要： A homogeneous diamond wire sawing multicrystalline Si surface with nanoscale oval pits was obtained in an acid solution by adding NaNO2, polyethylene glycol–polyvinyl alcohol, and dodecylbenzene sulfonic acid at 12 °C for 130 s. The textured surface showed orientation dependence. The anisotropy of H/D caused different experimental results. The Rave of incident light originating from the direction parallel to saw marks was 22–27% larger than that from the direction perpendicular to saw marks. The photovoltaic conversion efficiency was 0.6–0.8% higher when the thin grid line of Ag electrode was parallel to the saw marks than when in the perpendicular direction. These results indicated that using saw marks can improve the conversion efficiency of solar cells.
关键词： Acid etching,Multi-crystalline silicon,Texturization,Wet chemical etching
更新于2025-09-23 15:21:01
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The CRESST-III low-mass WIMP detector
摘要： The next generation direct dark matter experiment CRESST-III has a high potential to signi?cantly increase the sensitivity to low-mass WIMPs (mχ (cid:46)10 GeV/c2). We present the new CRESST detector module: it consists of a 24 g CaWO4 crystal operated as a phonon detector and a 20x20 mm2 silicon-on-sapphire light detector. The phonon energy threshold is lowered to ～100 eV and a light detector resolution of typically 5 eV is achieved. A fully-scintillating inner detector housing is realised which e?ciently rejects events from surface-alpha decays. The CaWO4 sticks holding the target crystal are also operated as calorimeters to discriminate all possible artefacts related to the support structure. A projection for the sensitivity to spin-independent WIMP-nucleon scattering is given for the ?rst phase of CRESST-III which will start beginning of 2016.
关键词： CaWO4 crystal,dark matter,silicon-on-sapphire light detector,CRESST-III,low-mass WIMPs
更新于2025-09-23 15:21:01
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Si-doping effect on solution-processed In-O thin-film transistors
摘要： In this work, silicon-doped indium oxide thin-film transistors (TFTs) have been fabricated for the first time by a solution processing method. By varying the Si concentration in the In2O3-SiO2 binary oxide structure up to 15 at.%, the thicknesses, densities, and crystallinity of the resulting In-Si-O (ISO) thin films were investigated by X-ray reflectivity (XRR) and X-ray diffraction techniques, while the produced TFTs were characterized by a conventional three-probe method. The results of XRR analysis revealed that the increase in the content of Si dopant increased the thickness of the produced film and reduced its density, and that all the Si-doped ISO thin films contained only a single amorphous phase even after annealing at temperatures as high as 800 °C. The manufactured ISO TFTs exhibited a reduction in the absolute value of threshold voltage VT close to 0 V and low current in the off-state, as compared to those of the non-doped indium oxide films, due to the reduced number of oxygen defects, which was consistent with the behavior of ISO TFTs fabricated by a sputtering method. The ISO TFT with a Si content of 3 at.% annealed at 400 °C demonstrated the smallest subthreshold swing of 0.5 V/dec, VT of ?5 V, mobility of 0.21 cm2/Vs, and on/off current ratio of about 2×107.
关键词： silicon-doped indium oxide,solution processing,amorphous oxide semiconductor,thin-film transistor,spin coating
更新于2025-09-23 15:21:01
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Cellular Internalization-Induced Aggregation of Porous Silicon Nanoparticles for Ultrasound Imaging and Protein-Mediated Protection of Stem Cells
摘要： Nanotechnology employs multifunctional engineered materials in the nanoscale range that provides many opportunities for translational stem cell research and therapy. Here, a cell-penetrating peptide (virus-1 transactivator of transcription)–conjugated, porous silicon nanoparticle (TPSi NP) loaded with the Wnt3a protein to increase both the cell survival rate and the delivery precision of stem cell transplantation via a combinational theranostic strategy is presented. The TPSi NP with a pore size of 10.7 nm and inorganic framework enables high-efficiency loading of Wnt3a, prolongs Wnt3a release, and increases antioxidative stress activity in the labeled mesenchymal stem cells (MSCs), which are highly beneficial properties for cell protection in stem cell therapy for myocardial infarction. It is confirmed that the intracellular aggregation of TPSi NPs can highly amplify the acoustic scattering of the labeled MSCs, resulting in a 2.3-fold increase in the ultrasound (US) signal compared with that of unlabeled MSCs. The translational potential of the designed nanoagent for real-time US imaging–guided stem cell transplantation is confirmed via intramyocardial injection of labeled MSCs in a nude mouse model. It is proposed that the intracellular aggregation of protein drug–loaded TPSi NPs could be a simple but robust strategy for improving the therapeutic effect of stem cell therapy.
关键词： drug delivery,porous silicon,ultrasound imaging,cell protection,cell labeling
更新于2025-09-23 15:21:01
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reveals remarkable optical linewidths and fine structure for well-known damage centers
摘要： Luminescence and optical absorption due to radiation damage centers in silicon have been studied exhaustively for decades, but are receiving new interest for applications as emitters for integrated silicon photonic technologies. While a variety of other optical transitions have been found to be much sharper in enriched 28Si than in natural Si, due to the elimination of inhomogeneous isotopic broadening, this has not yet been investigated for radiation damage centers. We report results for the well-known G, W, and C damage centers in highly enriched 28Si, with optical linewidth improvements in some cases of over two orders of magnitude, revealing previously hidden ?ne structure in the G-center emission and absorption. These results have direct implications for the linewidths to be expected from single-center emission, even in natural Si, and for models for the G-center structure. The advantages of 28Si can be readily extended to the study of other radiation damage centers in Si.
关键词： 28Si,silicon,fine structure,optical linewidths,radiation damage centers
更新于2025-09-23 15:21:01
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Amorphous Silicon with Extremely Low Absorption: Beating Thermal Noise in Gravitational Astronomy
摘要： Amorphous silicon has ideal properties for many applications in fundamental research and industry. However, the optical absorption is often unacceptably high, particularly for gravitational-wave detection. We report a novel ion-beam deposition method for fabricating amorphous silicon with unprecedentedly low unpaired electron-spin density and optical absorption, the spin limit on absorption being surpassed for the first time. At low unpaired electron density, the absorption is no longer correlated with electron spins, but with the electronic mobility gap. Compared to standard ion-beam deposition, the absorption at 1550 nm is lower by a factor of ≈100. This breakthrough shows that amorphous silicon could be exploited as an extreme performance optical coating in near-infrared applications, and it represents an important proof of concept for future gravitational-wave detectors.
关键词： amorphous silicon,thermal noise,gravitational-wave detection,ion-beam deposition,optical absorption
更新于2025-09-23 15:21:01
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Experimental evaluation of silicon photonics transceiver operating at 120°C for 5G antenna array systems
摘要： The use of optical transceivers in antenna array system applications requires reliable operation at high temperature. The experimental characterisation of a silicon photonics transceiver operating in a harsh environment with temperatures up to 120°C is presented and discussed. The transceiver was placed inside a climatic chamber and it was fed by an external depolarised light source. The bit error rate was measured, and the impacts on transmission performances were analysed and discussed, including reliability aspects. The authors believe that silicon photonics transceivers with an optimised design and with improvements in the optical connector and fibre adhesive technology are suitable for this kind of applications.
关键词： silicon photonics,antenna array systems,transceiver,5G,high temperature operation
更新于2025-09-23 15:21:01
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Silicon High-order Mode (De)Multiplexer on Single Polarization
摘要： Mode-division multiplexing on an integrated photonic chip is critical for future optical networks. High-order mode multiplexing is desired to increase the transmission capacity. Here we propose and experimentally demonstrate a silicon on-chip high-order mode (de)multiplexer using subwavelength grating (SWG) structure, which supports 11-mode (de)multiplexing on a TE-polarized light (TE0 ~ TE10). The proposed mode (de)multiplexer comprises three directional couplers and seven SWG-based directional couplers. Measurement results show that all the 11 channels have low crosstalk values (?15.4 dB ~ ?26.4 dB) and low insertion losses (0.1 dB ~ 2.6 dB) at 1545 nm. To the best of our knowledge, our device achieves the highest-order-mode (de)multiplexing on a silicon photonic chip.
关键词： photonic integrated circuits,silicon photonics,multiplexing,Subwavelength grating,mode
更新于2025-09-23 15:21:01
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Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper
摘要： Correlations between physical properties linking film quality with wet etch rate (WER), one of the leading figures of merit, in plasma-enhanced atomic layer deposition (PEALD) grown silicon nitride (SiNx) films remain largely unresearched. Achieving a low WER of a SiNx film is especially significant in its use as an etch stopper for technology beyond 7 nm node semiconductor processing. Herein, we explore the correlation between the hydrogen concentration, hydrogen bonding states, bulk film density, residual impurity concentration, and the WERs of PEALD SiNx using Fourier transform infrared spectrometry, X-ray reflectivity, and spectroscopic ellipsometry, etc. PEALD SiNx films for this study were deposited using hexachlorodisilane and hollow cathode plasma source under a range of process temperatures (270 °C – 360 °C) and plasma gas compositions (N2/NH3 or Ar/NH3) to understand the influence of hydrogen concentration, hydrogen bonding states, bulk film density, and residual impurity concentration on the WER. Varying hydrogen concentration and differences in the hydrogen bonding states resulted in different bulk film densities, and accordingly, a variation in WER. We observe a linear relationship between hydrogen bonding concentration and WER as well as a reciprocal relationship between bulk film density and WER. Analogous to the PECVD SiNx processes, a reduction in hydrogen bonding concentration arises from either (1) thermal activation or (2) plasma excited species. However, unlike the case with silane (SiH4)-based PECVD SiNx, PEALD SiNx WERs are affected by residual impurities of Si precursors (i.e., chlorine impurity). Thus, possible wet etching mechanisms in HF in which the WER is affected by hydrogen bonding states or residual impurities are proposed. The shifts of amine basicity in SiNx due to different hydrogen bonding states and the changes in Si electrophilicity due to Cl impurity content are suggested as the main mechanisms that influence WER in the PEALD processes.
关键词： plasma-enhanced ALD (PEALD),bulk film density,hexachlorodisilane (HCDS),wet etch rate (WER),silicon nitride,hydrogen/chlorine content,atomic layer deposition (ALD),hydrogen bonding state
更新于2025-09-23 15:21:01