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Dual Parallel Multi-electrode Traveling Wave Mach-Zehnder Modulator for 200 Gb/s Intra-datacenter Optical Interconnects
摘要： We present a silicon photonic dual parallel multi-electrode Mach-Zehnder modulator (MEMZM) based transmitter targeting 200 Gb/s 4-level pulse amplitude modulation (PAM4) short reach transceivers. The MEMZMs have an average Vπ and electro-optic (EO) bandwidth of 5 V and 38 GHz, respectively. The transmitter is characterized versus receiver equalizer taps, received signal power, driving voltage swing, crosstalk voltage swing, bitrate, and reach. Results reveal that using only a 3-tap equalizer at the receiver, 100 Gb/s PAM4 net rate per lane can be achieved at a bit error rate (BER) below the KP4 forward error correction (KP4-FEC) threshold of 2.4 × 10?4. Moreover, up to 128 Gb/s can be received at a BER below the KP4-FEC threshold using only 2 Vpp and 1 Vpp driving the MEMZM segments. Then, both MEMZMs are driven simultaneously to assess the crosstalk impact on the BER performance at parallel operation. Driven by four binary signals, we demonstrate 200 Gb/s PAM4 transmission over up to 10 km of single mode fiber at a BER below the KP4-FEC threshold.
关键词： Optical interconnects,Fiber optics systems,silicon nanophotonics,Electro-optical systems
更新于2025-09-23 15:22:29
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Silicon ring resonator electro-optical modulator utilizing epsilon-near-zero characteristics of indium tin oxide
摘要： One crucial component in optical communication systems is the optical modulator. It links between the electric and optical domains as it transforms the electric signal into an optical stream. Electro-optical modulation is a very popular scheme. Recently, indium tin oxide (ITO) has been intensively used in optical modulators due to its epsilon-near-zero characteristics. A silicon electro-optic ring resonator modulator is proposed in terms of the outspread application of ITO. An extinction ratio of about 14 dB as well as an insertion loss of 0.075 dB are achieved at a standard telecommunication wavelength of 1.55 microns. The design has low losses, high efficiency, and compact size.
关键词： silicon nanophotonics,ring resonators,indium tin oxide,electro-optical modulators,integrated photonics
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Sub-Decibel Off-Chip Fiber Couplers Based on L-Shaped Waveguides and Subwavelength Grating Metamaterials
摘要： Uniform grating couplers based on versatile L-shaped waveguides are experimentally demonstrated, with coupling loss of -2.7 dB and back-reflections of -20 dB. Apodized couplers with subwavelength-grating metamaterials predict improved fiber-chip coupling down to -0.46 dB within device layouts compatible with lithographic technologies available in nanophotonic foundries.
关键词： silicon-on-insulator,sub-wavelength grating metamaterials,deep-ultraviolet technology,silicon nanophotonics,grating couplers,mass-scale production
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
摘要： Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of -13.9, -12.7, and -11.3 dBm.
关键词： silicon-on-insulator,complementary metal-oxide-semiconductor technology,silicon nanophotonics,germanium,optical photodetectors
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Sub-Decibel Off-Chip Fiber Couplers Based on Z-Shaped Waveguides and Subwavelength Grating Metamaterials
摘要： Uniform grating couplers based on versatile L-shaped waveguides are experimentally demonstrated, with coupling loss of -2.7 dB and back-reflections of -20 dB. Apodized couplers with subwavelength-grating metamaterials predict improved fiber-chip coupling down to -0.46 dB within device layouts compatible with lithographic technologies available in nanophotonic foundries.
关键词： deep-ultraviolet technology,mass-scale production,sub-wavelength grating metamaterials,silicon-on-insulator,silicon nanophotonics,grating couplers
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
摘要： Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of -13.9, -12.7, and -11.3 dBm.
关键词： silicon nanophotonics,optical photodetectors,complementary metal-oxide-semiconductor technology,germanium,silicon-on-insulator
更新于2025-09-16 10:30:52
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Silicon Non-Blocking 4 × 4 Optical Switch Chip Integrated With Both Thermal and Electro-Optic Tuners
摘要： We experimentally demonstrate an integrated strictly non-blocking silicon 4×4 optical switch chip that can be operated in both thermo-optic (TO) and electro-optic (EO) switching modes. It is based on the double-layer network (DLN) architecture and consists of twelve 2×2 Mach-Zehnder interferometer (MZI) switch elements. TO phase shifters based on TiN microheaters and EO phase shifters based on p-i-n diodes are embedded in both waveguide arms of the MZI elements. The power consumption for TO and EO switching is 34 mW/π and 7 mW/π, respectively. The on-chip insertion losses are 1.74 ± 0.59 dB and 3.79 dB ± 1.32 dB for TO and EO switching, respectively. Due to the merits of the DLN architecture and the optimized performance of the switch elements, the chip possesses low crosstalk of -29.1 dB and -19.4 dB for TO and EO switching, respectively. Quadrature phase-shift keying (QPSK) optical signals with a data rate of 64 Gb/s are transmitted through the switch with no observable deteriorations. Such an optical switch is a promising candidate for both optical circuit switching and optical packet switching for a variety of applications.
关键词： integrated nanophotonic systems,waveguide devices,Silicon nanophotonics
更新于2025-09-11 14:15:04