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- 摘要
- 关键词
- 实验方案
- 产品
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Sub-Decibel Off-Chip Fiber Couplers Based on L-Shaped Waveguides and Subwavelength Grating Metamaterials
摘要： Uniform grating couplers based on versatile L-shaped waveguides are experimentally demonstrated, with coupling loss of -2.7 dB and back-reflections of -20 dB. Apodized couplers with subwavelength-grating metamaterials predict improved fiber-chip coupling down to -0.46 dB within device layouts compatible with lithographic technologies available in nanophotonic foundries.
关键词： silicon-on-insulator,sub-wavelength grating metamaterials,deep-ultraviolet technology,silicon nanophotonics,grating couplers,mass-scale production
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
摘要： Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of -13.9, -12.7, and -11.3 dBm.
关键词： silicon-on-insulator,complementary metal-oxide-semiconductor technology,silicon nanophotonics,germanium,optical photodetectors
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Sub-Decibel Off-Chip Fiber Couplers Based on Z-Shaped Waveguides and Subwavelength Grating Metamaterials
摘要： Uniform grating couplers based on versatile L-shaped waveguides are experimentally demonstrated, with coupling loss of -2.7 dB and back-reflections of -20 dB. Apodized couplers with subwavelength-grating metamaterials predict improved fiber-chip coupling down to -0.46 dB within device layouts compatible with lithographic technologies available in nanophotonic foundries.
关键词： deep-ultraviolet technology,mass-scale production,sub-wavelength grating metamaterials,silicon-on-insulator,silicon nanophotonics,grating couplers
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - High-Speed Germanium Pin Photodiodes Integrated on Silicon-on-Insulator Nanophotonic Waveguides
摘要： Hetero-structured silicon-germanium-silicon photodetectors operating under low-reverse-voltages with high responsivity, fast response, and low dark-current levels are reported. A bit-error-rate of 10-9 is experimentally achieved for conventional data rates of 10, 20, and 25 Gbps, providing optical power sensitivities of -13.9, -12.7, and -11.3 dBm.
关键词： silicon nanophotonics,optical photodetectors,complementary metal-oxide-semiconductor technology,germanium,silicon-on-insulator
更新于2025-09-16 10:30:52
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Direct Observation of Topological Edge States in Silicon Photonic Crystals
摘要： The concept of topology has proven immensely powerful in physics, describing new phases of matter with unique properties. There has been a recent surge in attempts to implement topological protection in the photonic domain, owing to the application potential of robust transport immune to scattering at disorder. A famous class of electronic topological insulators relies on the quantum spin-Hall effect (QSHE). Photonic analogues of QSHE were recently predicted to occur in photonic crystals with special symmetries [1, 2]. Interestingly, topological photonic crystals employing QSHE offer the possibility to access their properties via far-field radiation [3]. Here we directly observe topological photonic states at telecom wavelengths in photonic crystals in silicon-on-insulator (SOI) technology, and characterize their inherent spin, dispersion, and propagation. We reveal that the radiation of the topological states carries a signature of their origin in photonic spin-orbit coupling, linking unidirectional propagation to circular polarization (see Fig. 1a). The employed photonic crystals (inset of Fig. 1a) employ higher-order symmetry breaking to open bandgaps of different topological order at the Γ point [1, 2]. The edge between two domains supports topological states of differing pseudospin. We analyze these states by dispersing normal-incidence reflected intensity in both frequency and angle, mapping the edge state dispersion (in Fig. 1b). It displays the characteristic linear dispersion of edge states, with measured group velocity ～ c/6 and quality factor ～ 450. The positive and negative group velocity modes can be selectively excited with opposite circular polarization. Conversely, the states’ pseudospin can be probed directly in the far field through the S3 Stokes parameter obtained from polarimetry (Fig. 1c). Our Fourier spectroscopic measurements moreover reveal a small gap at the edge state crossing that is related to spin-spin scattering. This coupling is inherent to the symmetry breaking at the edge, and a defining difference between photonic and electronic topological insulators. Through the far-field spin-orbit link, we selectively excite edge states in opposite directions, and image their propagation in real-space microscopy. Figure 1d shows the routing of the edge state at a sharp waveguide junction. Interestingly, we observe an absence of backscattering or forward scattering, demonstrating the topological protection of unidirectional propagation. In fact, the states closely follow the photonic crystal edge — defined by the junction’s chiral structure of sub-unit cell size — even though their transverse extent is significantly larger. In conclusion, we observe the unique nature of topologically protected light transport in photonic crystals, through a technique that holds great promise for developing novel topological systems for various applications, including integrated photonic components, quantum optical interfaces, enantiomeric sensing, and nanoscale lasing.
关键词： photonic spin-orbit coupling,topological photonic states,unidirectional propagation,silicon-on-insulator,circular polarization
更新于2025-09-16 10:30:52
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Design and fabrication of high-Q silicon micro-resonators
摘要： We design and fabricate two different high-Q micro-resonators in a silicon-on-insulator (SOI) platform. Two device architectures are non-concentric microring resonator (MRR) and microdisk resonator (MDR) with ridge wave-guide. Theoretical analysis and experimental demonstration show that intrinsic power losses per round-trip can be decreased, thus improving the Q-factor. The highest Q-factor can be achieved at 8×104 and 1.9×105, respectively.
关键词： silicon-on-insulator platform,micro-resonators,high Q-factor
更新于2025-09-16 10:30:52
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Fabrication tolerance analysis of grating couplers between optical fibers and silicon waveguide
摘要： The grating structure and its performance for coupling between fiber and silicon-based waveguide are studied and analyzed. The coupling mechanism is illustrated through the grating Bragg diffraction condition, and the effect of physical parameters and alignment parameters of the grating coupler on the coupling efficiency is analyzed by FDTD (Finite-difference time-domain). The optimum design values of the period, duty cycle, etching depth and alignment parameters of the grating coupler are obtained, and at the same time, the deviation analysis on the optimal size is carried out. We present high-efficiency grating couplers fabricated both in EBL (Electron Beam Lithography) and Deep Silicon Etching through process optimization on device dimension, which can be useful for grating coupler fabrication.
关键词： Tolerance analysis,Coupling efficiency,Grating coupler,Silicon-on-Insulator
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) - Tel-Aviv, Israel (2019.11.4-2019.11.6)] 2019 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) - Transformer-Coupled Octa-Core 60 GHz Push-Push VCO in a 45-nm RF-SOI CMOS Technology
摘要： This work presents a 60 GHz octa-core push-push VCO in a 45 nm partially depleted (PD) Silicon-on-Insulator (SOI) CMOS technology. We investigate the feasibility of coupling eight VCO cores via resonant-tank transformers and discuss circuit topology considerations. The measured phase noise at 63.4 GHz is (cid:2)95.3 dB/Hz at 1 MHz offset from carrier. The continuous frequency-tuning range is 19 %. The eight VCO cores consume in total 80 mW DC power. The complete circuit, including buffers at the fundamental and second harmonic outputs, draws 158 mA from a single 1 V supply. The total area of the octa-core VCO excluding pads is 0.18 mm2.
关键词： silicon-on-insulator,wideband,millimeter-wave,VCO,CMOS technology,phase noise
更新于2025-09-16 10:30:52
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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Cooled Silicon-On-Insulator Diode Thermometer: Toward THz Passive Imaging
摘要： Terahertz passive imaging requires high sensitivity detectors, with Minimum Detectable Power (MDP) under the picowatt range. An antenna-coupled cooled microbolometer, incorporating a lateral PiN-like diode as thermometer, could represent a solution. In a first step, such diode performances have to be investigated, especially the temperature coefficient of current (TCC) and the low frequency noise. Prototypes were fabricated on Silicon-On-Insulator (SOI) 4” wafers with 50-nm active silicon layer. I-V and noise measurements down to 81K were useful to derive the electrical MDP of the future bolometer, already reaching 6.6 pW at 10 frames per second.
关键词： low frequency noise,microbolometer,Minimum Detectable Power,PiN diode,temperature coefficient of current,Silicon-On-Insulator,Terahertz passive imaging
更新于2025-09-12 10:27:22
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[IEEE 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS) - Seoul, Korea (South) (2019.1.27-2019.1.31)] 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS) - Engineering and Tuning of Slow Light in Mid-Infrared Silicon-on-Insulator Photonic Crystal Waveguides
摘要： We design, fabricate, and characterize slow light devices based on photonic crystal waveguides (PhCWs) in the mid-infrared wavelength range of 3.9-3.98 μm. Lattice shifting and thermo-optic tuning methods are employed to manipulate the slow light region for potential spectroscopy sensing applications. Up to 20 nm wavelength shift of the slow light band edge is demonstrated. Normalized delay-bandwidth products as high as 0.084-0.112 are obtained thanks to dispersion engineering. The slow light enhancement effect of thermo-optic tuning efficiency is verified by the proportional relationship between the phase shift and the group index. This work serves as a proof-of-concept that slow light effect can strengthen light-matter interaction and thereby improve device performance in sensing and nonlinearity applications.
关键词： thermo-optic tuning,slow light,mid-infrared,dispersion engineering,silicon-on-insulator,photonic crystal waveguides
更新于2025-09-12 10:27:22