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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup
摘要： The influence of residual gas pressure on the characteristics of black-Silicon field emitter arrays in a high voltage triode setup is investigated. I-V-characteristics at different pressure levels show a decrease of emission current with rising pressure. This can be explained by an increase of the work function and charging of the emitter surface due to adsorbates. The initial characteristics can be restored by heating the FEA up to 110 °C during electron emission. This regeneration procedure enables an extension of the lifetime from about 20 h to 440 h at a residual gas pressure of 10-5 mbar.
关键词： silicon tips,emission current stability,semiconductor field emission,field emitter array
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Performance and Degradation Evaluation of PV Modules on the Substring Level by an In-Situ Electronic Device
摘要： We report silicon ?eld emitter arrays (FEAs) that demonstrate current densities >100 A/cm2 at gate–emitter voltages <75 V. These are the highest current densities reported for a semiconductor FEA, and approach the current densities of Spindt-type metal cathodes. We achieved these results using a new device structure that employs high-aspect-ratio silicon nanowire current limiters in series with each emitter tip to address the major failure mechanisms in FEAs. These current limiters mitigate emitter tip failure due to joule heating thus allowing for higher reliability. We employed a novel fabrication process to produce small gate apertures (≈350 nm) that are self-aligned to the ?eld emitter tip enabling device operation at >100 A/cm2 with gate-to-emitter voltages that are less than 75 V. These FEAs demonstrate performance that has the potential to enable smaller, more ef?cient, and high-power vacuum electronics.
关键词： FEAs,nanowires,Field emission arrays,silicon FEAs,silicon tips,silicon nanowire current limiters
更新于2025-09-19 17:13:59