- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Hydrogen diffusion from PECVD silicon nitride into multicrystalline silicon wafers: Elastic recoil detection analysis (ERDA) measurements and impact on light and elevated temperature induced degradation (LeTID)
摘要： Hydrogen is a crucial element for crystalline silicon solar cells due to its ability to passivate bulk defects in silicon. The introduction and distribution of hydrogen has gained a lot of interest due to its proposed involvement in the phenomenon termed “light and elevated temperature induced degradation” (LeTID) in multicrystalline silicon (mc-Si) solar cells. LeTID, which can cause an efficiency loss of about 6-14% (relative) for mc-Si PERC (passivated emitter and rear cell) devices upon exposure to elevated temperature and illumination, is a serious cause of concern for the silicon photovoltaic industry. Interaction of hydrogen with mc-Si is complex as mc-Si contains grain boundaries, dislocations, large concentrations of impurities and traps which may affect the diffusivity of hydrogen in silicon. Understanding the diffusion of hydrogen in mc-Si, and how it affects LeTID, is therefore of great interest. In this contribution, the concentration of hydrogen diffused into p-type mc-Si lifetime samples from hydrogen-rich passivation layers (SiNx:H and AlOx:H) fired at different peak firing temperatures is measured by elastic recoil detection analysis (ERDA) along with Rutherford backscattering (RBS). Also, experiments are done to study the impact of annealing in the presence of hydrogen on the extent of LeTID. A correlation is established between the hydrogen concentration diffused into silicon bulk and the extent of LeTID in lifetime samples fired at different peak firing profiles.
关键词： light and elevated temperature induced degradation,multicrystalline silicon wafers,PECVD silicon nitride,elastic recoil detection analysis,Hydrogen diffusion
更新于2025-09-12 10:27:22
-
Effect of Oxygen Precipitation in Silicon Wafer on Electrical Characteristics of Fully Ion-Implanted n-Type PERT Solar Cells
摘要： Fully ion-implanted n-type PERT solar cells with boron-implanted emitter and phosphorus-implanted back surface field were fabricated on the n-type silicon wafers obtained from the top part of the magnetic field-applied Czochralski ingot. It was observed that the electrical parameters are widely dispersed; among 11 solar cells, the best performing achieved 20.4% front side conversion efficiency, whereas the worst achieved 19.0%. Although the silicon wafers had low oxygen concentrations of 3–4 × 1017 atoms/cm3, the density of oxygen precipitates in the silicon wafers was on the order of 109 /cm3 as a consequence of the fully ion-implanted n-type PERT silicon solar cell processes. In addition, it was observed that the front side conversion efficiencies of the solar cells depended on the density of oxygen precipitates. Furthermore, the behavior of the oxygen precipitation during the fabrication processes of the solar cell is discussed.
关键词： oxygen precipitation,conversion efficiency,ion implantation,n-type PERT solar cells,silicon wafers
更新于2025-09-12 10:27:22
-
AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Evaluation of dissolved oxygen concentration in silicon wafers by measuring infrared attenuated total reflection
摘要： Dissolved oxygen concentration of silicon wafers were evaluated by measuring infrared absorption of dissolved oxygen in attenuated total reflection (ATR) spectra of silicon wafers and compared with transmission-based evaluation. ATR peak height and the correlation between ATR and transmission was significantly stronger after chemical-mechanical polishing of both sides of wafers to 450 ± 10 μm. The results also indicate that the quantitative evaluation of the oxygen concentration of thin silicon wafers can be done by ATR measurements with appropriate preprocessing.
关键词： dissolved oxygen,infrared attenuated total reflection,ATR,silicon wafers,transmission-based evaluation
更新于2025-09-11 14:15:04
-
VO <i> <sub/>n</sub></i> Complexes in RTA Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy
摘要： Oxygen-vacancy complexes formed after rapid thermal annealing in silicon wafers were investigated by FTIR spectroscopy at 6 K. It was found that VO4 is the only detectable complex. The concentration of VO4 complexes increases with increasing temperature of RTA treatment in the temperature range between 1250?C and 1400?C. The concentration at maximal temperature is equal to 4.5 × 1013 cm?3. The experimental results were compared with concentrations of VOn complexes in silicon wafers obtained using ab-initio calculations combined with rate equation modelling. The simulated concentration of VO4 corresponds well to the measured concentration. The bulk microdefect density increases with increasing VO4 concentration. The vacancies stored in VOn complexes after RTA are slowly released during further annealing and enhance oxide precipitation.
关键词： VO4 complexes,silicon wafers,Rapid thermal annealing,FTIR spectroscopy,oxygen precipitation
更新于2025-09-09 09:28:46
-
Lithography-induced hydrophobic surfaces of silicon wafers with excellent anisotropic wetting properties
摘要： In recent years, hydrophobic surfaces have attracted more and more attentions from many researchers. In this paper, we comprehensively discussed the effects of specific parameters of microstructures on the wetting properties by using the theoretical models, the effects of microstructures on two-dimensional anisotropic properties and the water droplet impact experiment. Firstly, the relationships between the CAs and variable parameters were explored after the formula derivation for three various patterns. Then three different patterns were fabricated successfully on the silicon wafers by lithography technology and the effects of microstructures (including LWD parameters and interval parameters) on surface wettability were studied based on the theoretical research. After that, the effects of microstructures on two-dimensional anisotropic properties were also studied. Finally, the water droplet impact experiment was carried out and the viscoelastic properties were simply investigated. Our research proposed a potential method for fabricating hydrophobic surfaces with excellent anisotropic properties. This method may be widely used in a variety of academic and industrial applications in the future.
关键词： lithography technology,theoretical models,anisotropic wetting,silicon wafers,hydrophobic surfaces
更新于2025-09-09 09:28:46