- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Understanding the Average Electron-Hole-Pair Creation-Energy in Silicon and Germanium based on Full-band Monte Carlo Simulations
摘要： The thermalization process of sub-10 eV charge carriers is examined with treating carrier transport with full-band Monte Carlo simulations. The average energy loss (3.69 eV in Si and 2.62 eV in Ge) required to create a thermalized electron-hole pair, obtained from the simulations, is very close to the experimentally measured radiation-ionization energies of Si and Ge irradiated with high-energy particles. These results suggest that only interactions that occur after the radiation-generated charge carriers decay to energies of ~10 eV or less determine the fundamental property of the radiation-ionization energies. In addition to an energy loss equal to the band gap energy via impact ionization, acoustic-phonon emission, which has been omitted in prior work, contributes 30% of the remaining carrier-energy loss, while optical-phonon emission contributes the other 70%.
关键词： Single event effects,Monte Carlo,electron-hole-pair,impact ionization
更新于2025-09-23 15:21:21
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Desynchronization of Pulsed Driving in the Formation of Soliton Kerr Frequency Combs
摘要： MRED is a Python-language scriptable computer application that simulates radiation transport. It is the computational engine for the on-line tool CRèME-MC. MRED is based on c++ code from Geant4 with additional Fortran components to simulate electron transport and nuclear reactions with high precision. We provide a detailed description of the structure of MRED and the implementation of the simulation of physical processes used to simulate radiation effects in electronic devices and circuits. Extensive discussion and references are provided that illustrate the validation of models used to implement specific simulations of relevant physical processes. Several applications of MRED are summarized that demonstrate its ability to predict and describe basic physical phenomena associated with irradiation of electronic circuits and devices. These include effects from single particle radiation (including both direct ionization and indirect ionization effects), dose enhancement effects, and displacement damage effects. MRED simulations have also helped to identify new single event upset mechanisms not previously observed by experiment, but since confirmed, including upsets due to muons and energetic electrons.
关键词： single event upset,single event effects,total ionizing dose,radiation effects,Displacement damage,Monte Carlo,radiation transport,MRED
更新于2025-09-23 15:21:01
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Polarization Dependence of Pulsed Laser-Induced SEEs in SOI FinFETs
摘要： Pulsed current laser-induced measurements on SOI FinFETs at sub-bandgap wavelength (1260 nm) are affected by the polarization of the laser light used in the experimental testing setup. Such a polarization dependence is not observed during pulsed laser single event effects testing on large area silicon diodes, suggesting that the polarization dependence arises due to the presence of the nanoscale fin. Plasmonic enhancement is proposed as a likely mechanism for the polarization effects due to the metal/dielectric interfaces in the fin region. The observed polarization dependence has ramifications for collection and interpretation of data acquired by pulsed laser testing. Device orientation of FinFETs and other nanoscale devices during pulsed laser testing should be considered in order to ensure consistent testing conditions and reproducible measurement results across multiple measurement campaigns.
关键词： Pulsed laser,FinFET,single-event effects,single-event transients
更新于2025-09-12 10:27:22
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Comparison of Sensitive Volumes Associated with Ion-and Laser-Induced Charge Collection in an Epitaxial Silicon Diode
摘要： A sensitive volume is developed using pulsed laser-induced collected charge for two bias conditions in an epitaxial silicon diode. These sensitive volumes show good agreement with absorption laser-induced collected charge at a variety of focal positions and pulse energies. When compared to ion-induced collected charge, the laser-based sensitive volume over predicts the experimental collected charge at low bias and agrees at high bias. A sensitive volume based on ion-induced collected charge adequately describes the ion experimental results at both biases. Differences in the amount of potential modulation explain the differences between the ion- and laser-based sensitive volumes at the lower bias. Truncation of potential modulation by the highly doped substrate at the higher bias results in similar sensitive volumes.
关键词： single-event transients,two-photon absorption,sensitive volume,single-event effects,Pulsed laser
更新于2025-09-12 10:27:22
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Dose and Single Event Effects on a Color CMOS Camera for Space Exploration
摘要： This paper focuses on the radiation-induced dose and single event effects on a color CMOS camera designed for space missions. Gamma-ray and protons are used to evaluate the tolerance against cumulative dose effects. The dark current of the image sensor is the main parameter impacted by dose effects. Heavy ions testing is performed to evaluate single event effects. SEU, SEFI and SEL have been observed and mitigation techniques were proposed for specific space missions.
关键词： Total Ionizing Dose (TID),Microlens,CMOS Image Sensor (CIS),Single Event Effects (SEE),Displacement Damage Dose (DDD),Pinned Photodiode (PPD),Active Pixel Sensor (APS),Monolithic Active Pixel Sensor (MAPS),Camera,Color filter,Random Telegraph Signal (RTS)
更新于2025-09-04 15:30:14