修车大队一品楼qm论坛51一品茶楼论坛,栖凤楼品茶全国楼凤app软件 ,栖凤阁全国论坛入口,广州百花丛bhc论坛杭州百花坊妃子阁

oe1(光电查) - 科学论文

5 条数据
?? 中文(中国)
  • Improving open-circuit voltage by a chlorinated polymer donor endows binary organic solar cells efficiencies over 17%

    摘要: Power conversion efficiency (PCE) of single-junction polymer solar cells (PSCs) has made a remarkable breakthrough recently. Plenty of work was reported to achieve PCEs higher than 16% derived from the PM6:Y6 binary system. To further increase the PCEs of binary OSCs incorporating small molecular acceptor (SMA) Y6, we substituted PM6 with PM7 due to the deeper highest occupied molecular orbital (HOMO) of PM7. Consequently, the PM7:Y6 has achieved PCEs as high as 17.0% by the hot-cast method, due to the improved open-circuit voltage (VOC). Compared with PM6, the lower HOMO of PM7 increases the gap between ELUMO-donor and EHOMO-acceptor, which is proportional to VOC. This research provides a high PCE for single-junction binary PSCs, which is meaningful for device fabrication related to PM7 and commercialization of PSCs.

    关键词: binary system,power conversion efficiencies,open-circuit voltage,single junction

    更新于2025-09-23 15:19:57

  • Analysis of Thin-film Direct Band-gap SiGeSn alloy based Heterostructure Solar Cell Featuring SiGe Absorber Layer

    摘要: Ternary alloy Si1-x-yGexSny or GexSn1-x made up of group IV elements has been receiving attention from researchers in recent years due to its direct band gap nature. In this work, we investigate the performance of solar cells made with this alloy. We have proposed a n+ Si1-x-yGexSny (emitter)/p- Si1-xGex (absorber)/p- Si1-x-yGexSny (base) /p+ Si1-x-yGexSny (back surface field layer: BSF) based solar cell grown on Si1-x-yGexSny substrate. The calculated values are compared with the values for existing Si1-xGex solar cells and comparatively improved performances are obtained for the proposed structure. The effects of different absorber layer thickness, doping concentrations of the absorber and BSF layers, Ge concentration in Si1-xGex and Sn concentration in Si1-x-yGexSny are also studied for the proposed structure. Conversion efficiency as high as 19.9% for substrate thickness as low as 10 μm has been obtained for the proposed structure. The low value of substrate thickness and high efficiency make the proposed structure attractive as a low-cost device for applications in spacecraft and satellites.

    关键词: conversion efficiency,TCAD simulation,single junction solar cell,Si1-x-yGexSny alloys

    更新于2025-09-16 10:30:52

  • Fabrication of an Efficient Planar Organic-Silicon Hybrid Solar Cell with a 150 nm Thick Film of PEDOT: PSS

    摘要: Organic–inorganic hybrid solar cells composed of p-type conducting polymer poly (3,4-ethylene-dioxythiophene): polystyrenesulfonate (PEDOT: PSS) and n-type silicon (Si) have gained considerable interest in recent years. From this viewpoint, we present an e?cient hybrid solar cell based on PEDOT: PSS and the planar Si substrate (1 0 0) with the simplest and cost-e?ective experimental procedures. We study and optimize the thickness of the PEDOT: PSS ?lm to improve the overall performance of the device. We also study the e?ect of ethylene glycol (EG) by employing a di?erent wt % as a solvent in the PEDOT: PSS to improve the device’s performance. Silver (Ag) was deposited by electron beam evaporation as the front and rear contacts for the solar cell device. The whole fabrication process was completed in less than three hours. A power conversion e?ciency (PCE) of 5.1%, an open circuit voltage (Voc) of 598 mV, and a ?ll factor (FF) of 58% were achieved.

    关键词: single junction solar cells,conducting polymers,hybrid solar cells,ethylene glycol,cost effective

    更新于2025-09-16 10:30:52

  • Optimization of back ITO layer as the sandwiched reflector for exploiting longer wavelength lights in thin and flexible (30?μm) single junction c-Si solar cells

    摘要: Fabrication of thin and ?exible crystalline silicon solar cells based on single junction concept is reported with detailed investigations on each step of the production ?ow chain. With the aim of minimizing material use/wastage as per the international technology roadmap for photovoltaic (ITRPV), which is also directly related to the device cost, e?orts have been made to introduce thin (~30 μm) c-Si wafers instead of a conventional 180 μm wafer to fabricate single-junction solar cells. Due to the introduction of thin (~30 μm) c-Si wafer, the device becomes ?exible, which is also an additional bene?t towards the development of future roll-to-roll electronics. In order to address better carrier collection in thin silicon as well as light management, measures have been taken by introducing an indium tin oxide (ITO) layer both on top and at the bottom. The in?uence of this ITO layer along with back Al contact toward the cell e?ciency has been discussed. X-ray di?raction (XRD) analysis has been carried out to investigate microstrain and dislocation density related changes in the thin wafer, which are known to have in?uence on the photoconversion e?ciency. Under 1 Sun illumination, current – voltage characteristics and external quantum e?ciency were measured and found to be promising.

    关键词: Sandwiched back ITO layer,Theoretical validation,Single junction,Thin silicon solar cells,Monocrystalline Si

    更新于2025-09-16 10:30:52

  • [IEEE 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Paris, France (2018.7.8-2018.7.13)] 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018) - Improvement of an Automated AC/DC Voltage Transfer Calibration System at the Standards and Calibration Laboratory

    摘要: This paper describes the recent improvement of the AC/DC voltage transfer calibration system at the Standards and Calibration Laboratory (SCL) of Hong Kong. The measurement system has been recently modified with an enclosure, a switching relay and an automated control program. With these new implementations, the switching time and the switching pattern were studied and compared with the original design.

    关键词: automation,AC/DC voltage transfer,single junction thermal element,multi junction thermal element

    更新于2025-09-10 09:29:36