Research of Single-Event Burnout and Hardening of AlGaN/GaN-Based MISFET

摘要： This brief ?rst time presents single-event burnout (SEB) simulation results for conventional AlGaN/GaN gate ?eld plate MISFET (GFP-C MISFET), simultaneously, a hardened MISFET with electrode connected doped plugs in the buffer (EC-DP MISFET) is proposed for the ?rst time. The SEB triggering mechanisms contain the back-channel effect and following impact ionization dominated by electron in the high ?eld region. By comparing the simulation results from the GFP-C MISFET and proposed hardened EC-DP MISFET, the carriers induced by heavy ion can be quickly absorbed to drain and source electrode through EC-DP, so that the proposed EC-DP MISFET can achieve better SEB performance than conventional one. With a heavy ion having the linear energy transfer value of 0.6-pC/μm striking vertically, SEB threshold voltage obtained in GFP-C MISFET and hardened EC-DP MISFET is 280 and 338 V, respectively.