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Polarization-controlled and single-transverse-mode vertical-cavity surface-emitting lasers with eye-shaped oxide aperture
摘要： We presented a single-transverse-mode and single-polarization vertical-cavity surface-emitting laser (VCSEL) with an eye-shaped oxide aperture, obtained by enhanced anisotropic oxidation of oxide layer. For apertures with dimensions of 2 ' 4.6 and 3 ' 6 μm2, the orthogonal polarization suppression ratio (OPSR) of the VCSEL was 22 and 19 dB, respectively. A single-mode suppression ratio (SMSR) of more than 25 dB at an output power of 0.5 mW was also achieved for the VCSEL with aperture dimension of 2 ' 4.6 μm2. We believe that the proposed method to realize the mode and polarization control of VCSELs has great potential in future applications. ? 2018 The Japan Society of Applied Physics
关键词： anisotropic oxidation,single-transverse-mode,VCSEL,single-polarization,eye-shaped oxide aperture
更新于2025-11-28 14:24:03
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Design Strategies for Power Scaling of GaSb-Based Superluminescent Diodes for 2 – 3 μm Wavelength Range
摘要： Mid-infrared semiconductor light sources emitting around 2–3 μm wavelength are instrumental for an increasing number of applications, such as molecular spectroscopy, trace-gas sensing, medical diagnostics and eye-safe LIDAR. For example, the monitoring of greenhouse gases (C2H2, CO2, CO and N2O) can be done with higher sensitivity using their molecular fingerprints in this wavelength range [1]. On the other hand, for a wider penetration to applications other important aspects, such as cost, power efficiency, portability and reproducibility are the key enablers. To this end, mid-IR silicon-photonics technology has emerged as a developed platform, yet so far relaying on the use of extended-cavity tunable laser concepts [2]. Alternatively, we have proposed the use of high power, spectrally broadband ridge waveguide (RWG) GaSb-based superluminescent diodes (SLDs) exhibiting single-transverse mode for efficient coupling to silicon photonics waveguide and enabling the development of spectral-programmable broadband light sources [3]. While 2–3 μm GaSb-based laser diodes have shown a good level of performance, yet the development of SLDs devices has seen little progress, owing to the peculiarity of GaSb material system, which is less spread as optoelectronics platform, and physics consideration, for example linked to increased Auger recombination. Most recent developments in the performance of GaSb gain-chips at room temperature (RT) include the demonstration of output powers of up to 60 mW at 1.9 μm [4], 10 mW at 2.25 μm, and 5 mW at 2.38 μm [5] for continuous-wave (CW) operation, and 3.2 mW average power at 2.55 μm [6] for pulse operation. Here we report a comparative study of using novel single- and double-pass SLED designs employing a cavity suppression (CS) element, shown in Fig.1. The active region consists of compressively strained GaInSb/AlGaAsSb double QWs [4]. We operated the devices under CW at RT. The double-pass approach has produced an output power up to 120 mW, which is 100% more than our previous single-pass demonstration. The high power is achieved due to the double-pass light amplification and better material quality. The cavity suppression element enabled high current injection with a broad spectrum having a spectral full width at half maximum (FWHM) of 70 nm and 40 nm for single- and double-pass SLDs, respectively. In conclusion, we reported the highest power GaSb-based SLD demonstrated so far, reaching a power level as high as 120 mW and a spectral bandwidth of 40 nm in a single-transvers mode-operation.
关键词： cavity suppression,single-transverse mode,mid-infrared,power scaling,GaSb-based superluminescent diodes
更新于2025-09-12 10:27:22