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In-Fiber Production of Laser-Structured Stress-Mediated Semiconductor Particles
摘要： The ability to generate stressed semiconductor particles is of great importance in the development of tunable semiconductor and photonic devices. However, existing methods including both bottom-up synthesis and top-down fabrication for producing semiconductor particles are inherently free of stress effects. Here, we report a simple approach to generate controllable stress effects on both encapsulated and free-standing semiconductor particles using laser-structured in-fiber materials engineering. The physical mechanism of the thermally induced in-fiber built-in stress is investigated, and the feasibility of precisely tuning the stress state during the particle formation is experimentally demonstrated by controlling the laser treatment. Gigapascal-level built-in stress, which is a sufficiently strong stimulus to enable inelastic deformations on the fabricated semiconductor particles, has been achieved via this approach. Both encapsulated and free-standing stressed semiconductor particles are generated for a wide range of in-fiber and out-fiber optoelectronic and biomedical applications.
关键词： Built-in stress control,Laser cooling rate,Residual stress,Stressed semiconductor particles,In-fiber material engineering
更新于2025-09-12 10:27:22
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Stress control of tensile-strained In <sub/>1?</sub><sub/><i>x</i> </sub> Ga <sub/><i>x</i> </sub> P nanomechanical string resonators
摘要： We investigate the mechanical properties of freely suspended nanostrings fabricated from tensile-stressed, crystalline In1?xGaxP. The intrinsic strain arises during epitaxial growth as a consequence of the lattice mismatch between the thin film and the substrate, and is confirmed by x-ray diffraction measurements. The flexural eigenfrequencies of the nanomechanical string resonators reveal an orientation dependent stress with a maximum value of 650 MPa. The angular dependence is explained by a combination of anisotropic Young’s modulus and a change of elastic properties caused by defects. As a function of the crystal orientation, a stress variation of up to 50% is observed. This enables fine tuning of the tensile stress for any given Ga content x, which implies interesting prospects for the study of high Q nanomechanical systems.
关键词： In1?xGaxP,tensile-strained,defects,nanomechanical string resonators,Young’s modulus,stress control
更新于2025-09-09 09:28:46