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GaN Transistors for Efficient Power Conversion || Hard-Switching Topologies
摘要： In hard-switching converters, the transistors are turned on and off rapidly, while there is voltage across – and current through – the drain and source of the device. These switching transitions lead to significant power losses during the switching event. The main metrics of any converter performance are: (a) efficiency, where higher is better, (b) size, where smaller is better, and (c) cost, where lower is better. Efficiency can be increased through improvements in the switching (dynamic) and conduction (static) characteristics of the devices, thereby allowing higher switching frequencies to be used. This, in turn, leads to a size reduction, which also can lead to lower cost. In this chapter, hard-switching topologies will be reviewed and we will look at how the superior properties of GaN transistors yield significant performance improvements.
关键词： power conversion,hard-switching,efficiency,GaN transistors,switching losses
更新于2025-09-23 15:21:01
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Use of 1.7 kV and 3.3 kV SiC Diodes in Si-IGBT/ SiC Hybrid Technology
摘要： Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4H-SiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature (20 ?C, RT) and high temperature (125 ?C, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.
关键词： Hybrid substrates,Switching losses,IGBT,JTE and FLRs,Schottky diode,SiC
更新于2025-09-23 15:21:01
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[IEEE 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italy (2019.9.3-2019.9.5)] 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Laser triggering of solid-state switches
摘要： A theoretical and experimental investigation has been made into the laser activated Silicon Controlled Rectifier (SCR) turn-on process. Thanks to the measurement of illumination profile of the thyristor gate and a one-dimensional commutation model, a prediction can be made of the temperature hotspots of the initially conducting area region adjacent to the gate. The improvement of switching characteristics with respect to the datasheet parameters for an electrically gated configuration will be demonstrated; 8-fold turn-on delay reduction and the rate of rise of the on-state current (di/dt) increased over 45 times at low pulse repetition rate, without destroying the device.
关键词： New switching devices,Thyristors,Photovoltaic,Switching losses,Particle accelerator,Transistor,Pulsed power,Semiconductor device
更新于2025-09-16 10:30:52
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On the Origin of the Coss-Losses in Soft-Switching GaN-on-Si Power HEMTs
摘要： The unprecedented performance potential of Gallium-Nitride-on-Silicon (GaN-on-Si) High Electron Mobility Transistors (HEMTs) is seen as the key enabler for the design of power converters featuring extreme power-density figures, as demanded in next generation power electronics applications. However, unexpected loss mechanisms, i.e. dynamic Rds,on phenomena and Coss-losses, are appearing in currently available GaN transistors and are compromising their operation. In this paper, measurements of Coss-losses are performed in a dedicated calorimetric measurement setup and, through a systematic approach, the root cause of the loss mechanism is potentially identified. Afterwards, with the essential support of a manufacturer of power semiconductors, a novel transistor, featuring an enhanced multi-layer III-N buffer, is developed according to the acquired knowledge. A significant reduction in terms of Coss-losses, i.e. of soft-switching losses, and the absence of dynamic Rds,on phenomena are verified experimentally on the new device. These achievements enable a significant performance improvement for future soft-switching power converters featuring GaN-on-Si HEMTs.
关键词： Soft-Switching Losses,Calorimetric Loss Measurements,Coss-Losses,GaN-on-Si HEMTs
更新于2025-09-09 09:28:46
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[IEEE 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA) - Paris, France (2018.10.14-2018.10.17)] 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA) - Application of Model Predictive Control in Modular Multilevel Converters for MTPA Operation and reduced Switching Losses
摘要： In this paper, a one-step Model Predictive Control system is executed in the Multilevel modular converter (MMC) to control the speed of an Interior Permanent Magnet (IPM) machine. Maximum Torque per Ampere (MTPA) and Field Weakening (FW) control technique is utilized for the greatest yield torque. The proposed Control strategy tracks the reference produced by MTPA and FW calculation by freely directing voltages from the MMC modules. The proposed method also studies the relation between the switching losses of MOSFETs and sampling frequency, cost function and a number of modules in an MMC. Finally, simulation results are provided to demonstrate the appropriateness of this control procedure.
关键词： Model Predictive Control,Modular Multilevel Converter (MPC),Maximum Torque per Ampere (MTPA),Interior Permanent Magnet motor (IPM),Switching losses,Field Weakening (FW)
更新于2025-09-04 15:30:14