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Tunable topological charge vortex microlaser
摘要： The orbital angular momentum (OAM) intrinsically carried by vortex light beams holds a promise for multidimensional high-capacity data multiplexing, meeting the ever-increasing demands for information. Development of a dynamically tunable OAM light source is a critical step in the realization of OAM modulation and multiplexing. By harnessing the properties of total momentum conservation, spin-orbit interaction, and optical non-Hermitian symmetry breaking, we demonstrate an OAM-tunable vortex microlaser, providing chiral light states of variable topological charges at a single telecommunication wavelength. The scheme of the non–Hermitian-controlled chiral light emission at room temperature can be further scaled up for simultaneous multivortex emissions in a flexible manner. Our work provides a route for the development of the next generation of multidimensional OAM-spin-wavelength division multiplexing technology.
关键词： data multiplexing,orbital angular momentum,chiral light emission,non-Hermitian symmetry breaking,vortex light beams,spin-orbit interaction,microlaser,telecommunication wavelength
更新于2025-09-23 15:21:01
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Broad tunability of emission wavelength by strain coupled InAs/GaAs <sub/>1???x</sub> Sb <sub/>x</sub> quantum dot heterostructures
摘要： Tuning of the photoluminescence emission over a wider range of optical telecommunication wavelength (1.38 μm–1.68 μm) has been achieved by employing a GaAs1 ? xSbx capping layer to the strain coupled bilayer InAs quantum dot (QD) heterostructures. It is shown that the modulation of strain between the two dot layers through variation in Sb-content and thickness of the capping layer strongly influence the dot size. The band alignment transformation from type-I to type-II is observed for high Sb-content in the capping layers. In addition, the carrier lifetime is improved by a factor of three in the QD heterostructures having type-II band alignment. This, we believe, is of importance for optoelectronic device applications.
关键词： GaAs1 ? xSbx capping layer,carrier lifetime,optoelectronic device applications,photoluminescence emission,strain coupled bilayer InAs quantum dot,type-I to type-II band alignment,optical telecommunication wavelength
更新于2025-09-12 10:27:22
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Hot-electron photodetector with wavelength selectivity in near-infrared via Tamm plasmon
摘要： Tamm plasmonic (TP) structures, consisting of a metallic film and a distributed Bragg reflector (DBR), can exhibit pronounced light confinement allowing for enhanced absorption in the metallic film at the wavelength of the TP resonance. This wavelength dependent absorption can be converted into an electrical signal through the internal photoemission of energetic hot-electrons from the metallic film. Here, by replacing the metallic film at the top of a TP structure with a hot-electron device in a metal-semiconductor-ITO (M-S-ITO) configuration, for the first time, we experimentally demonstrate a wavelength-selective photoresponse around the telecommunication wavelength of 1550 nm. The M-S-ITO junction is deliberately designed to have a low energy barrier and an asymmetrical hot-electron generation, in order to guarantee a measurable net photocurrent even for sub-bandgap incident light with a photon energy of 0.8 eV (1550 nm). Due to the excitation of TPs between the metallic film in the M-S-ITO structure and the underlying DBR, the fabricated TP coupled hot-electron photodetector exhibits a sharp reflectance dip with a bandwidth of 43 nm at a wavelength of 1581 nm. The photoresponse matches the absorptance spectrum, with a maximum value of 8.26 nA/mW at the absorptance peak wavelength that decreases by more than 80% when the illumination wavelength is varied by only 52 nm (from 1581 to 1529 nm), thus realizing a high modulation wavelength-selective photodetector. This study demonstrates a high-performance, lithography-free, and wavelength-selective hot-electron near-infrared photodetector structure.
关键词： hot-electron photodetector,near-infrared,wavelength-selective photodetection,Tamm plasmonic structures,telecommunication wavelength
更新于2025-09-11 14:15:04