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Temperature Tunable Narrow-Band Terahertz Metasurface Absorber Based on InSb Micro-Cylinder Arrays for Enhanced Sensing Application
摘要： A narrow-band metasurface absorber (MSA) based on InSb micro-cylinder arrays has been proposed and investigated numerically, which could be believed to be applicable for both temperature and refractive index (RI) sensing in terahertz (THz) region. Distinct from previous designs, the proposed narrow-band MSA is only consisted of a sub-wavelength periodic micro-cylinder array based on the InSb material possessing an extremely thermosensitive relative permittivity which varies with the external environment temperature, and a gold ground-plane deposited on a glass substrate. Numerical simulation results indicate that the proposed MSA can achieve an absorbance of 99.9% at 1.8985 THz and the corresponding Q-factor is about 120.9 at room temperature (300 K). It is inferred that the narrow-band perfect absorption of the MSA could be contributed to the surface plasmon polariton (SPP) resonance mode excitation. Furthermore, the absorption property of the designed MSA is found to be highly sensitive to the RI value variations of the surrounding mediums and fluctuations of external environment temperature. Thus, the proposed MSA can be not only operated as a temperature sensor with a sensitivity of 2.13 GHz/K, but also a RI sensor with a sensitivity of 960 GHz/RIU (refractive index unit). Due to its high sensing performance, it can be believed that the narrow-band MSA has great potential applications in chemical, biological or other optoelectronic related areas.
关键词： terahertz region,Metasurface absorber,sensing,InSb,narrow-band
更新于2025-09-23 15:21:01
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Terahertz intersubband transitions in GaAsBi/AlGaAs single quantum well heterostructure
摘要： GaAsBi/AlGaAs single quantum well conduction band structure, energy levels, and their corresponding wavefunctions have been calculated by solving the Schr?dinger equation. The influences of the heterostructure parameters on the intersubband transition (ISBT) frequency within the terahertz (THz) domain have been investigated. The results show that the quantum well width has a great impact on the THz ISBT frequency. In particular, an ISBT with a frequency of 2.611 THz (10.80?meV) has been obtained for specifically optimized parameters. The study of the intersubband optical absorption coefficient (OAC) was centered in the frequency band of 2 – 14 THz ( ~ 8 – 58 meV), therefore the corresponding results are useful for the optimization of THz detectors. Correspondingly, by changing the thickness of the active layer the number of the OAC peaks has been tuned. The dipole matrix element and the Fermi occupation function have been also studied in detail. Furthermore, the influences coming from the incidence angle on the OAC intensity were numerically investigated. The obtained results could be beneficial for the design and the optimization of devices operating in the THz frequency band.
关键词： GaAsBi quantum well,Terahertz region,Intersubband transitions,Optical absorption coefficient,Incidence angle,Active layer thickness
更新于2025-09-19 17:13:59