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[IEEE 2017 14th IEEE India Council International Conference (INDICON) - Roorkee (2017.12.15-2017.12.17)] 2017 14th IEEE India Council International Conference (INDICON) - Impact of intermittent wind and solar resources on the dynamics of power system under different loading conditions
摘要： This paper presents the impact of renewable energy systems i.e. wind and solar on the load frequency control aspects of power system. An interconnected two area power system is modeled with backlash in the governor and generation rate constraint (GRC) in the turbine dynamics. The system is integrated with wind and solar resources in the form of a time series data with a resolution of one fifth of a second. The impact of these two renewable energy resources on the frequency response of power system is analyzed in terms of maximum overshoot (MP) and settling time (ts).
关键词： frequency deviation,peak overshoot,renewables integration,settling time,two area model.
更新于2025-09-23 15:23:52
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A 600V PiN diode with partial recessed anode and double-side Schottky engineering for fast reverse recovery
摘要： In this paper, a novel 600V PiN diode for fast recovery is proposed and the operation mechanism as well as the high dynamic ruggedness of the device are analyzed in detail. The proposed structure features the alternating P/N region with partial recessed P region at anode side and the P- Schottky as well as the N Schottky contacts at both sides. In on-state, the carrier injection efficiency can be modulated by adjusting the work function of the anode P- Schottky contact (WSA), which is based on MSC (Metal-Semiconductor-Contacts) concept. As a result, the fast recovery is realized due to the reduced amount of the stored carriers and the shortened carrier extraction path. In off-state, the leakage current can be effectively suppressed attributed to the rapid pinch-off of the depletion layer. The forward voltage drop (VF) and the reverse recovery time (trr) of the proposed structure can be adjusted by changing the depth of the P- Schottky contact (tra) on the sidewall, without sacrificing the breakdown voltage (BV). The proposed structure achieves a trr of 75ns which is 45.7% and 33% lower than that of the conventional PiN and the MPS structure at the same VF of 0.965V, respectively. Moreover, the total amount of holes in the N buffer layer can be supplemented by adjusting the work function of the cathode N Schottky contact (WSC) during reverse recovery, resulting in a high-dynamic ruggedness with suppressed voltage oscillation and voltage overshoot.
关键词： Schottky contact,leakage current,dynamic characteristics,PiN diode,voltage overshoot,reverse recovery
更新于2025-09-23 15:23:52
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Modeling and Simulation of Comprehensive Diode Behavior under Electrostatic Discharge Stresses
摘要： Diodes are effective devices for Electrostatic Discharge (ESD) protection. To accurately predict ESD robustness through circuit simulation of protection architectures in integrated circuits that use diodes, an enhanced model is proposed. This model is constructed with several compact model elements to simulate all physical device behaviors under high current transient ESD conditions, namely voltage overshoot, on-resistance variation, and thermal failure. The proposed model implements a thermal monitor, which can not only correlate current – voltage characteristics with the self-heating effect, but accurately predicts thermal failure under different pulse width conditions. The simulation results of this comprehensive diode model benchmarked against measurements are also reported.
关键词： junction thermal failure,Electrostatic discharge (ESD),thermal network,transmission line pulse (TLP),on-resistance variation,overshoot
更新于2025-09-23 15:21:21
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Comparison of Performance Measures for PV based Super-Lift Luo-Converter using Hybrid Controller with Conventional Controller
摘要： The paper presents design and analyze of PV based Super-lift Luo converter with different controllers in the modern technology of DC-DC converter. The Luo converter provides output voltage which is positive from positive source voltage. By using this converter power density obtained is high with less ripple content in voltage and current profile. It is proven from the Mathematical modeling that the output voltage increases in geometric progression, thereby efficiency of the converter increases. The controller parameters in PI controller are tuned using Ziegler Nichols tuning algorithm. The paper proposes a design of hybrid controller which gives good transient performance compared with conventional PI controller. Using Simulink the proposed converter with its control circuit is implemented. The main advantage of this proposed converter based on photo voltaic system is that it produces voltages increasing in geometric progression. The converter has proved to be robustness around the operating point. In various operating condition, the dynamic performance with input voltage variations and load fluctuation is good. The simulation performance closely coincides with the theoretical analysis. The settling time and overshoot obtained using hybrid controller is compared with fuzzy controller and conventional controller and it is proven that hybrid controller has good dynamic performance. The real time implementation with solar PV cell is also carried out. The converter finds wide application in switch mode power supply and speed control of DC motors.
关键词： Photo Voltaic (PV) Cells,Fuzzy Logic Controller,PI Controller,Peak Overshoot,Super Lift Converter,Settling Time
更新于2025-09-23 15:21:01
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[IEEE 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO) - Kiev (2018.4.24-2018.4.26)] 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO) - Research of the AlGaAs Impulse Properties
摘要： The impulse properties of AlxGa1-xAs (at x = 0.225) are investigated by research of the "overshoot" effect of the charge carriers drift velocity. The effect of the rectangular electric field pulse parameters on the temporal and spatial distribution of the drift velocity is carried out by the numerical experiment. The impulse properties of Al0.225Ga0.775As and gallium arsenide are compared.
关键词： the effect of the drift velocity "overshoot",AlGaAs,impulse properties
更新于2025-09-09 09:28:46
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Evaluation of Switching Loss Contributed by Parasitic Ringing for Fast Switching Wide Band-Gap Devices
摘要： Parasitic ringing is commonly observed during the high-speed switching of wide band-gap (WBG) devices. Additional loss contributed by parasitic ringing becomes a concern especially for high switching frequency applications. This paper investigates the effects of parasitic ringing on switching loss of WBG devices in a phase-leg configuration. An analytical switching loss model considering parasitics in power devices and application circuit is derived. Two switching commutation modes, gate drive dominated mode and power loop dominated mode, are investigated, respectively, and the switching loss induced by damping ringing is identified. It is found that this portion of the loss is at most the energy stored in parasitics, which always exists regardless of the switching speed and parasitic ringing. Therefore, with the given WBG device in the specific application circuit, damping more severe parasitic ringing during faster switching transient would not introduce higher switching loss. Additionally, the extra switching loss induced by resonance among parasitics and cross-talk is investigated. It is observed that severe resonance and its resultant over-voltage during the turn-on transient worsens the cross-talk, causing large shoot-through current and excessive switching loss. The theoretical analysis has been verified by the double pulse test with a 1200-V/50-A SiC-based phase-leg power module.
关键词： fast speed switching,switching loss,parasitic ringing,overshoot voltage,cross-talk,Wide Bandgap
更新于2025-09-09 09:28:46