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Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon
摘要： Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured silicon (NT-Si) surface passivation. The AlOxNy films are shown to exhibit a homogeneous nitrogen-doping profile and the presence of an adequate amount of hydrogen, which is investigated by Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA). The effective minority carrier lifetimes are measured after the NT-Si surface passivation; the minimum surface recombination velocity (SRV) of 5 cm-s-1 is achieved with the AlOxNy film in comparison to the Al2O3 and AlN films (SRV of 7–9 cm-s-1). The better SRV with AlOxNy film is due to the collective effect of field-effect passivation by the presence of fixed negative charges, and chemical passivation by the presence of hydrogen within the film. The capacitance-voltage, and conductance measurements also are carried out using metal-oxide-semiconductor structure to determine the fixed negative charge density (Nf,ox), and defect density of states (Dit) in the AlOxNy films. The better surface passivation is attributed to unusually large Nf,ox of ~6.07 × 1012 cm-2, and minimal Dit of ~1.01 × 1011 cm-2-eV-1 owing to the saturation of Si dangling bonds by the hydrogen within the AlOxNy film matrix after the annealing step.
关键词： Surface passivation,Time-of-flight elastic recoil detection analysis (ToF-ERDA),Aluminum oxynitride,Thermal atomic layer deposition,Black flexible silicon
更新于2025-10-22 19:40:53
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Thermal atomic layer deposition of Sn metal using SnCl <sub/>4</sub> and a vapor phase silyl dihydropyrazine reducing agent
摘要： This work explores a novel, thermal atomic layer deposition (ALD) process to deposit tin metal at a low temperature. The authors employ 1,4-bis(trimethylsilyl)-1,4-dihydropyrazine (DHP) to reduce SnCl4 on silicon substrates. The authors explored a range of temperatures between 130 and 210 °C to determine the ALD window, which was found to be 170–210 °C. The authors show that this process yields a growth rate of ～0.3 ? per cycle at 190 °C. Furthermore, X-ray photoelectron spectroscopy results showed that the ?lm impurities are reduced for depositions within the ALD window. The reaction mechanism was explored using in situ mass spectrometry and in situ quartz crystal microbalance (QCM). Within the ALD temperature window, the QCM results showed a saturated mass gain during the SnCl4 exposure and a net mass loss during the DHP dose. Consistent with the QCM results, in situ mass spectroscopy data indicate that the DHP exposure step removes surface Cl via formation of volatile trimethylsilyl chloride and pyrazine by-products, effectively reducing the oxidation state of surface-bound Sn. This work is the ?rst thermal Sn metal ALD process to be reported in literature and the oxidation/reduction chemistry presented here may be applied to other metal precursors, increasing the applicability of metal ALD use in industry.
关键词： quartz crystal microbalance,X-ray photoelectron spectroscopy,ALD window,SnCl4,mass spectrometry,tin metal,thermal atomic layer deposition,DHP
更新于2025-09-04 15:30:14