- 标题
- 摘要
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- 实验方案
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GaN Transistors for Efficient Power Conversion || Modeling and Measurement of GaN Transistors
摘要： The previous chapter focused on the layout parasitics that are important when using GaN transistors, and showed methods of minimizing these parasitics for layouts with various levels of complexity. In this chapter, the focus will be on how best to understand and predict the actual in-circuit behavior of the GaN transistors once the layout has been completed. Although measurement and modeling are very different, they complement each other when attempting to better understand real-world behavior. The initial discussion will focus on the electrical and thermal modeling of GaN transistors, and conclude with discussion of the requirements and limitations when directly measuring in-circuit behavior.
关键词： power conversion,electrical modeling,GaN transistors,measurement,modeling,thermal modeling
更新于2025-09-23 15:21:01
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Determination of the limiting values of the laser parameters to heat treatment of powder carbon steels surface
摘要： The microstructure and microhardness of the surface layer of powder steels PA-ZhGr with different porosity are studied in comparison with cast steel U10 after laser treatment (LT) with a 1 kW fiber laser in argon. Using thermal modeling, the geometric dimensions of the laser exposure zones formed in the area of the laser exposure were calculated and experimentally confirmed, and the mechanisms of their formation were proposed. The boundary values of the integral criterion for the parameters of laser influence for the heat treatment of carbon powder steels are established.
关键词： thermal modeling,microstructure,laser treatment,microhardness,powder steels
更新于2025-09-23 15:19:57
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A three dimensional meshfree-simulation of the selective laser sintering process with constant thermal coefficients applied to nylon 12 powders
摘要： 3D printing is an intersting process in the context of creating original objects.Selective laser sintering printers use a laser to fuse polyamide particles together with specific resin and heat. The difference in temperature between the different areas in the process causes the appearance of deformations, the objective of this work is the modeling of the thermal SLS phenomenona, by following the evolution of the temperature as a function of time.This model is based on the resolution of the heat conduction equation coupling with convection and radiation conditions with a distribution heat source and constant thermal coefficients by the meshless method based on radial basis function , the result of this study,will be presented and compared with other works.
关键词： heat transfer,Meshfree method,radical basis function (RBF),thermal modeling,selective laser sintering(SLS)
更新于2025-09-19 17:13:59
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High-repetition-rate laser-induced damage of indium tin oxide films and polyimide films at a 1064 nm wavelength
摘要： Experiments and thermal modeling of indium tin oxide transparent conductive thin film and polyimide alignment thin film coated on fused silica substrates damaged with a 1064 nm high-repetition-rate laser are described. High-repetition-rate laser irradiation results in damaged morphologies of the bulge at low laser power density and formation of a pit in the center of the bulge at higher laser power density. The damage process that is consistent with the observations as a function of laser power density and irradiation time is related to thermal effect. Simulation of the temperature-rise by exposure to high-repetition-rate laser describes the thermal effect with different pulse oscillation.
关键词： high-repetition-rate laser,polyimide,laser-induced damage,thermal modeling,indium tin oxide
更新于2025-09-19 17:13:59
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Modern Manufacturing Processes || Laser-assisted Machining Operations
摘要： There is a growing interest in the industry in improving productivity in manufacturing processes of materials with low machinability properties. Some high added value applications need manufacturing of parts with very high standards that cannot be satisfied with regular materials. Typically, these materials present high mechanical and thermal resistance combined with low thermal conductivity. The high shear strength makes difficult the plastic deformation during machining, and the low thermal conductivity affects directly tool life increasing the tool wear.
关键词： Laser-assisted machining,heat-assisted processes,direct laser machining,plasma-assisted machining,material machinability,thermal modeling
更新于2025-09-12 10:27:22
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Thermal characterization of gallium oxide Schottky barrier diodes
摘要： The higher critical electric field of β-gallium oxide (Ga2O3) gives promise to the development of next generation power electronic devices with improved size, weight, power, and efficiency over current state-of-the-art wide bandgap devices based on 4H-silicon carbide (SiC) and gallium nitride (GaN). However, it is expected that Ga2O3 devices will encounter serious thermal issues due to the poor thermal conductivity of the material. In this work, self-heating in Ga2O3 Schottky barrier diodes under different regimes of the diode operation was investigated using diverse optical thermography techniques including thermoreflectance thermal imaging, micro-Raman thermography, and infrared thermal microscopy. 3D coupled electro-thermal modeling was used to validate experimental results and to understand the mechanism of heat generation for the diode structures. Measured topside and cross-sectional temperature fields suggest that device and circuit engineers should account for the concentrated heat generation that occurs near the anode/Ga2O3 interface and/or the lightly doped drift layer under both forward and high voltage reverse bias conditions. Results of this study suggest that electro-thermal co-design techniques and top-side thermal management solutions are necessary to exploit the full potential of the Ga2O3 material system.
关键词： Schottky barrier diodes,thermal characterization,electro-thermal modeling,gallium oxide,optical thermography
更新于2025-09-10 09:29:36
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[IEEE 2018 IEEE PELS Workshop on Emerging Technologies: Wireless Power Transfer (WoW) - Montréal, QC, Canada (2018.6.3-2018.6.7)] 2018 IEEE PELS Workshop on Emerging Technologies: Wireless Power Transfer (Wow) - Power Handling Capability of Self-Resonant Structures for Wireless Power Transfer
摘要： The range and ef?ciency of resonant inductive wireless power transfer depends on the quality factor of the resonant coils. A multilayer self-resonant structure (MSRS), made of many alternating layers of thin foil conductors and dielectric, has been shown to have a quality factor many times higher than conventional resonant coils of similar size. To date, the MSRS has only been modeled and tested for small-signal excitations and the impact of large-signal excitations on the MSRS performance has not been considered. This paper explores large-signal effects such as Steinmetz core loss, temperature dependence of winding and core losses, and the thermal effect of loss in order to determine the power handling capability of the MSRS. The analysis shows that a 6.6 cm-diameter prototype MSRS is capable of transferring as much as 10.7 kW over a 0.5 cm gap and 760 W over 2.2 cm, for maximum 40 ?C temperature rise in a 25 ?C environment.
关键词： power handling capability,thermal modeling,multilayer self-resonant structure,wireless power transfer,quality factor
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Thermal and Thermomechanical Modeling to Design a Gallium Oxide Power Electronics Package
摘要： There is significant interest in the power electronics industry in transitioning from silicon to wide-bandgap devices. Gallium oxide devices have the potential to offer comparable or even superior performance than other wide-bandgap devices, but at a much lower cost. Recent breakthroughs include demonstration of a laboratory-scale gallium oxide transistors and diodes; however, a functional power electronics package for these devices is yet to be developed. In this paper, the research methodology in designing an electronics package for gallium oxide devices is outlined. Finite element-based thermal and thermomechanical modeling simulations were conducted to realize a package design that meets the combined target of minimal thermal resistance and improved reliability. Different package designs that include various material combinations and cooling configurations were explored, and their thermal and thermomechanical performance are reported. Furthermore, the short-circuit withstanding capabilities of gallium oxide devices were studied and compared with silicon carbide.
关键词： gallium oxide,thermal modeling,thermomechanical modeling,finite-element,high-temperature packaging,power electronics,wide-bandgap devices
更新于2025-09-04 15:30:14