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Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO <sub/>3</sub> -SrSnO <sub/>3</sub> Solid-Solution Based Thin Film Transistors
摘要： The transparent oxide semiconductor (TOS) with large bandgap (Eg ≈ 4 eV) based thin-film transistors (TFTs) showing both high carrier mobility and UV–visible transparency has attracted increasing attention as a promising component for next generation optoelectronics. Among TOSs, BaSnO3–SrSnO3 solid-solutions (Eg = 3.5–4.2 eV) are good candidates because the single crystal shows very high mobility. However, the TFT performance has not been optimized due to the lack of fundamental knowledge especially the effective thickness (teff ) and the carrier effective mass (m*). Here, it is demonstrated that the electric field thermopower (S) modulation method addresses this problem by combining with the standard volume carrier concentration (n3D) dependence of S measurements. By comparing the electric field accumulated sheet carrier concentration (n2D) and n3D at same S, it is clarified that the teff (≈n2D/n3D) of the conducting channel becomes thicker with increasing Sr concentration, whereas the m* becomes lighter. The former would be due to the increase of Eg and latter would be due to the enhancement of overlap population of neighboring Sn 5s orbitals. The present analyses technique is useful to experimentally clarify the teff and m*, and essentially important to realize advanced TOS-based TFTs showing both high optical transparency and high mobility.
关键词： electric field thermopower modulation,effective thickness,thin film transistors,BaSnO3–SrSnO3 solid solution,effective mass
更新于2025-09-19 17:15:36
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Thermopower of a Two-Dimensional Semimetal in a HgTe Quantum Well
摘要： The thermopower in a two-dimensional semimetal existing in HgTe quantum wells 18–21 nm thick has been studied experimentally and theoretically for the first time. It has been found theoretically and experimentally that the thermopower has two components—diffusion and phonon-drag—and that the second component is several times larger than the first. It has been concluded that the electron–hole scattering plays an important role in both mechanisms of the thermopower.
关键词： diffusion,thermopower,HgTe quantum wells,two-dimensional semimetal,phonon-drag,electron–hole scattering
更新于2025-09-09 09:28:46