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Effect of annealing temperature of MoO3 layer in MoO3/Au/MoO3 (MAM) coated PbS QDs sensitized ZnO nanorods/FTO glass solar cell
摘要： This research reports fabrication of MoO3/Au/MoO3 (MAM) coated PbS sensitized quantum dot solar cell. ZnO nanorod grown FTO glass substrates were sensitized by PbS quantum dots (PbS QDs/ZnO nanorods/FTO Glass), followed by (MoO3/Au/MoO3) coating. Hydrothermal process was used to grow ZnO nanorods, followed by the deposition of PbS QDs using Successive Ionic Layer Adsorption and Reaction (SILAR). Finally, (MoO3/Au/MoO3) layers were deposited for the back contact. Spin coating was used to deposit MoO3 layers while middle layer of Au was deposited by sputter coating. Three such devices were fabricated with three di?erent annealing temperatures i.e. 100 °C, 150 °C and 200 °C for ?rst MoO3 layer. Scanning Electron Microscopy (SEM) was used for surface morphology of the devices; Energy Dispersive Spectroscopy Analysis (EDS) and X-Ray Di?raction (XRD) techniques were used for elemental and structural analysis, Optical properties of the devices were determined using UV–Visible analysis. Power conversion e?ciency (PCE) of all three devices was obtained to observe devices performance. Improved PCE of 4.617% was obtained by the device with the thermal treatment of 150 °C.
关键词： Quantum dots,ZnO nanorods,MoO3 thin ?lm,PbS quantum dot sensitized Solar Cell
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Analysis of the Value Proposition of High-efficiency, Multijunction Solar Modules for Residential Rooftop Installations
摘要： We report for the ?rst time on the impact of a printed indium tin oxide (ITO) layer inserted between a printed silver conductor and solution processed zinc oxide (ZnO) leading to an optimized semiconductor/contact scheme for full print integration. Introducing the ITO interlayer, the contact resistance is reduced by two orders of magnitude. Nanoparticle thin-?lm transistors (TFTs) in this Ag/ITO contact con?guration show improved saturation mobility of 0.53 cm V s with respect to 0.08 cm V s without ITO interlayer. The contact improvement can be attributed to either an increased charge carrier concentration or a reduction of band offsets at the ZnO/electrode interface.
关键词： indium–tin–oxide,zinc oxide (ZnO),thin-?lm transistors (TFTs),Contact resistance
更新于2025-09-23 15:19:57
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Optical and electronic properties of CdTe quantum dots in their freezed solid matrix phase and solution phase
摘要： The present work deals with the comparison of sizes, optical and electronic properties of COOH functionalized CdTe quantum dots (QDs) in freezed solid polymeric (polyvinyl alcohol (PVA) matrix and in solution phase (water). PVA has been chosen as host material for guest CdTe QDs because of its unique properties like hydrophilicity, good thermo stability, and easy process ability. Experimental absorption, emission, X-Ray diffraction spectra and electronic band gap have been studied by UV–Vis absorption, luminescence and X-Ray diffraction spectroscopy. The smaller size of CdTe QDs in solid PVA polymer matrix ((cid:1)6 nm) and larger band gap of (cid:1)9.5 eV validates their quantum con?nement regime in freezed solid phase. The smaller particle size in solid phase compared to that of the particle size in its solution phase (8 nm) validates the non existence of agglomeration in solid phase. Appearance of high intense and wide luminescence emission in solid form proves the strong candidature of CdTe QDs as promising sensors for today’s optoelectronic and biomedical industry.
关键词： Quantum Dot,CdTe/PVA thin ?lm,Quantum con?nement,UV–Visible,Photoluminsence spectroscopy
更新于2025-09-23 15:19:57
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Effects of substrate bias and temperature on the structure and dielectric properties of Ti Zr1?N ternary nitride thin films
摘要： Transition metal nitrides have become a kind of promising alternative plasmonic materials. TixZr1?xNy ternary nitride ?lms were prepared by magnetron co-sputtering method, and the e?ects of bias voltage and temperature on the structure and dielectric properties of the ?lms were investigated. The experimental results show that all the ?lms are fcc-structured, and high substrate bias and temperature can signi?cantly improve the N and Ti content. Increasing substrate bias voltage or temperature can reduce the crossover frequency ωc at which the ?lms transit from dielectric to metallic phase. Also, a high bias can greatly in?uence the energy loss of the ?lms. Furthermore, the plasmonic quality factor can be e?ectively tailored by bias and temperature. Increasing bias can decrease the quality factor while high temperature (600 °C) can enhance the quality factor signi?cantly. The study demonstrates that the TixZr1?xNy ?lms, as one kind of alternative plamonic materials, have considerable performances, and their dielectric and plasmonic properties can be modulated by varying the bias voltage and temperature in a wide range.
关键词： Bias,Temperature,Dielectric properties,Thin ?lm,Nitride
更新于2025-09-19 17:15:36
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Monolithic Amplifier Based on a Chirally-Coupled-Core Fiber
摘要： Amorphous indium–gallium–zinc oxide (a-IGZO) thin-?lm transistor nonvolatile memory devices with an IGZO charge storage layer were evaluated for the ?rst time for multi-level cell memory applications. The pristine device was de?ned as the original state (OS), which can be switched to the programmed state (PS) after a positive gate voltage pulse (for example, 12 V for 10 ms), and to the erased state (ES) after a negative gate voltage pulse (for example, ?15 V for 10 ms). The writing mechanism was attributed to Fowler–Nordheim tunneling of electrons from the channel to the charge storage layer under a positive gate bias and inverse tunneling under a negative gate bias. The devices demonstrated superior electrical programmable and erasable characteristics. A memory window of 2.4 V between OS and PS was maintained after 100 programming/erasing cycles, and a memory window of 2.66 V between OS and ES as well. The memory windows relative to OS are equal to 1.91 and 1.30 V for PS and ES, respectively, for a retention time of 105 s.
关键词： thin-?lm transistor,In-Ga-Zn-O,nonvolatile memory,multi-level cell
更新于2025-09-19 17:13:59
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Violet Light-Emitting Diodes Based on p-CuI Thin Film/n-MgZnO Quantum Dot Heterojunction
摘要： As the lighting technology evolves, the need for violet light-emitting diodes (LEDs) is growing for high color rendering index lighting. The present technology for violet LEDs is based on the high-cost GaN materials and metal?organic chemical vapor deposition process; therefore, there have recently been intensive studies on developing low-cost alternative materials and processes. In this study, for the ?rst time, we demonstrated violet LEDs based on low-cost materials and processes using a p-CuI thin ?lm/n-MgZnO quantum dot (QD) heterojunction. The p-CuI thin ?lm layer was prepared by an iodination process of Cu ?lms, and the n-MgZnO layer was deposited by spin-coating presynthesized n-MgZnO QDs. To maximize the performance of the violet LED, an optimizing process was performed for each layer of p- and n-type materials. The optimized LED with 1 × 1 mm2-area pixel fabricated using the p-CuI thin ?lm at the iodination temperature of 15 °C and the n-MgZnO QDs at the Mg alloying concentration of 2.7 at. % exhibited the strongest violet emissions at 6 V.
关键词： p-CuI thin ?lm,device optimization,violet light-emitting diode,heterojunction,n-MgZnO quantum dot
更新于2025-09-19 17:13:59
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Selective Wet-Etching of Polymer/Fullerene Blend Films for Surface- and Nanoscale Morphology-Controlled Organic Transistors and Sensitivity-Enhanced Gas Sensors
摘要： Surface and nanoscale morphology of thin poly(3-hexylthiophene) (P3HT) ?lms are e?ectively controlled by blending the polymer with a soluble derivative of fullerene, and then selectively dissolving out the fullerene from the blend ?lms. A combination of the polymer blending with fullerene and a use of diiodooctane (DIO) as a processing additive enhances the molecular ordering of P3HT through nanoscale phase separation, compared to the pristine P3HT. In organic thin-?lm transistors, such morphological changes in the blend induce a positive e?ect on the ?eld-e?ect mobility, as the mobility is ~5–7 times higher than in the pristine P3HT. Simple dipping of the blend ?lms in butyl acetate (BA) causes a selective dissolution of the small molecular component, resulting in a rough surface with nanoscale features of P3HT ?lms. Chemical sensors utilizing these morphological features show an enhanced sensitivity in detection of gas-phase ammonia, water, and ethanol.
关键词： selective etching process,morphology,polymer blend,chemical sensor,organic thin-?lm transistor
更新于2025-09-19 17:13:59
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A Study on Transparent Electrode Properties of Indium Tin Oxide Thin Films Deposited From Recycled Target
摘要： In this study, we investigated the transparent electrode and mechanical properties of indium tin oxide (ITO) thin ?lms deposited from recycled targets of In2O3 (90 wt %) and SnO3 (10 wt %). We also evaluated the effect of their heat treatment at different temperatures. The ITO thin ?lm deposited on the glass substrate at ambient temperature exhibited microcrystallization characteristics in which the amorphous state was incorporated. When the annealing temperature was over 200 (cid:1)C, the ITO thin ?lm showed stable transparent electrode characteristics with a sheet resistance value of 7.2 Ω/sq and high transmittance of more than 85% in the visible light region through recovery and recrystallization. Under compressive stress, the ITO thin ?lm exhibited stable elastic modulus and hardness values of more than 110 GPa and 6.0 GPa, respectively. It is anticipated that these outcomes will meet the electrical, optical, and mechanical property requirements for commercial ITO transparent electrodes.
关键词： Pulsed dc sputtering,ITO thin ?lm,Recycled target,Nanoindentation,Heat treatment
更新于2025-09-19 17:13:59
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Application of Al-Doped (Zn, Mg)O on pure-sulfide Cu(In, Ga)S2 solar cells for enhancement of open-circuit voltage
摘要： In this study, interfacial recombination observed by activation energy (Ea) is reduced with an improvement in the built-in potential (Vbi) by raising the conduction band minimum (EC) in Al-doped (Zn, Mg)O (AZMO) layer for pure-sul?de Cu(In, Ga)S2 (CIGS) solar cells. It is observed that the optical band gap in AZMO ?lms can be widened from 3.56 to 3.97 eV with increasing Mg/(Mg + Zn) ratio from 0 to 0.23, suggesting the shift of EC toward the vacuum level. AZMO layers with Mg/(Mg + Zn) ratio of 0–0.23 are applied as transparent conductive oxide (TCO) for the pure-sul?de CIGS solar cells. The open-circuit voltage is clearly enhanced from 0.641 to 0.713 V with increasing Mg/(Mg + Zn) ratio from 0 to 0.09 and then decreased to 0.651 V at Mg/(Mg + Zn) ratio of 0.23 in the AZMO layer. Reverse saturation current density (J0) was minimized to 9.4 × 10?7 A/cm2 at Mg/(Mg + Zn) of 0.09, although J0 was 4.7 × 10?6 A/cm2 in Al-doped ZnO (Mg/(Mg + Zn) of 0). From Mott-Schottky plot, it is observed that Vbi for the pure-sul?de CIGS solar cells gradually enhanced with an increase in Mg/(Mg + Zn) from 0 to 0.23 in the AZMO layer. These results suggest that Vbi improves by controlling EC in the TCO layer, which ultimately reduces the recombination at the hetero interface owing to strengthened electric ?eld.
关键词： Al-doped (Zn, Mg)O,Chalcopyrite,Thin-?lm solar cell,Built-in potential,Conduction band minimum,Cu(In, Ga)S2
更新于2025-09-16 10:30:52
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Preparation of Hybrid Molybdenum Disulfide/Single Wall Carbon Nanotube–n-Type Silicon Solar Cells
摘要： Carbon nanotube/silicon (CNT/Si) heterojunction solar cells represent one new architecture for photovoltaic devices. The addition of MoS2 to the devices is shown to increase the e?ciency of the devices. Two structures are explored. In one case, the single wall carbon nanotubes (SWCNTs) and MoS2 ?akes are mixed to make a hybrid, which is then used to make a ?lm, while in the other case, a two layer system is used with the MoS2 deposited ?rst followed by the SWCNTs. In all cases, the solar cell e?ciency is improved largely due to signi?cant increases in the ?ll factor. The rise in ?ll factor is due to the semiconducting nature of the MoS2, which helps with the separation of charge carriers.
关键词： molybdenum disul?de (MoS2),single wall carbon nanotubes (SWCNTs),thin ?lm,solar cells
更新于2025-09-16 10:30:52