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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Wet-Chemically Textured Ultra-Thin GaAs Solar Cells with Dielectric/Metal Rear Mirrors
摘要： The rear-side contact layer of ultra-thin GaAs solar cells was textured using a simple, one-step wet chemical approach. A ZnS/Ag double layer was conformally deposited to function as a diffusive rear mirror. Local Ohmic contact points provided electrical contact directly to the Ag. The textured solar cells were compared with planar reference cells fabricated on the same wafer and a clear enhancement of long-wavelength quantum efficiency and short-circuit current was observed in the textured cells. Both architectures showed FF > 80% and VOC > 1 V. Additionally, the rear-side texture increases the external luminescent efficiency by enhancing outcoupling of luminescence.
关键词： light trapping,ultra-thin GaAs solar cells,dielectric mirror,wet etching
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Improved Photoabsorption in Thin Gallium Arsenide Solar Cells using Light Trapping Techniques
摘要： Thin absorbers for space photovoltaics can achieve higher radiation tolerance, however, they suffer from reduced photoabsorption as the active region is thinned. In this work, increasing the photoabsorption in thin single junction n-i-p GaAs solar cells have been investigated by applying different light trapping structures at the rear of the cell. The main focus has been to develop a random surface texture that varies in three dimensions to increase light scattering and the effective optical path length. From the EQE, the random back surface reflector was successfully applied to a 1.1 μm thick GaAs solar cell which resulted in a notable 38% increase in current output, when compared to the GaAs baseline cell on its substrate without a BSR. The random texture has shown the capability to maintain the current output in the 1.1 μm thick GaAs absorber and shows promise for enhancing the photoabsorption in thin GaAs absorbers that approach the sub-μm thickness regime.
关键词： photoabsorption,thin GaAs solar cells,light trapping,random maskless texture,radiation tolerance
更新于2025-09-16 10:30:52