- 标题
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- 实验方案
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Development and characterization of TlGaSe2 thin film-based photodetector for visible-light photodetector applications
摘要： In current work a thermal evaporation technique has been employed to fabricate the thin films from the grown TlGaSe2 single crystal and investigated. X-ray diffraction study revealed the formation of polycrystalline films of monoclinic crystal system. The crystallite size was estimated to be 11 nm. Atomic force and scanning electron microscopy studies shows the nanocrystalline film fabrication and the size of grain was estimated. Optical study shows that the grown film is about 55% transparent in 800–1500 nm region and possess a sharp absorption edge. The direct energy gap of TlGaSe2 films was estimated around 2.31 eV. The photo current of the fabricated TlGaSe2 photodetector increases about 6 times compare to dark when exposed under 5 mW/cm2 illumination. The fabricated detector possesses high external quantum efficiency of 158% and also the detectivity reached to 5.16 ? 1010 at V ? 10 V. The on/off behaviour of the device was also studied and found that the response time for growth and decay is 88 ms and 90 ms, respectively.
关键词： A. Thin film,D. optical properties,C. X-ray diffraction,B. thermal evaporation,D. electrical properties,D. photodetector
更新于2025-09-23 15:19:57
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A Thina??Film Flexible Defecta??Mode Laser
摘要： Laser emission from a flexible defect-mode structure consisting of two photopolymerized liquid crystal thin films separated by a dye-doped polymethylmethacrylate defect layer is demonstrated. A simple and cost-effective film transfer technique is used to fabricate the flexible laser and the corresponding laser emission characteristics, which shows single-mode laser emission at λ = 582 nm, with an excitation threshold of Eth = 12.3 ± 0.5 μJ cm?2 per pulse and a slope efficiency of ηs = 6.0 ± 0.3%, are presented. The polarization state of the laser emission are also presented and are compared with the findings reported in the literature. Finally, laser-beam steering is demonstrated up to 42° by subjecting the device to a mechanically induced deformation that creates a radius of curvature of 5 mm, which is of potential interest for conformable and wearable technology platforms.
关键词： thin-film lasers,liquid crystals,flexible lasers,defect-mode lasers
更新于2025-09-23 15:19:57
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Controlling In‐Ga‐Zn‐O Thin‐Film Resistance by Vacuum Rapid Thermal Annealing and Application to Transparent Electrode
摘要： This study reveals that an amorphous indium gallium zinc oxide film shows a large resistance change under vacuum rapid thermal annealing, whereas a zinc tin oxide film shows little resistance change under the same treatment. Based on these findings, the applicability of amorphous indium gallium zinc oxide thin films to a transparent source/drain electrode in zinc tin oxide thin-film transistors is investigated. The optical transmittance of the amorphous indium gallium zinc oxide and amorphous zinc tin oxide films in the visible region is greater than 85%. Furthermore, a zinc tin oxide thin-film transistor with an amorphous indium gallium zinc oxide source/drain electrode exhibits superior operation characteristics than devices with indium tin oxide source/drain electrodes, such as a lower threshold swing (from 369.96 to 315.45 mV dec?1), higher mobility (from 28.47 to 36.187 cm2 V?1 s?1), and higher on/off current ratio (from 1.25 × 107 to 3.56 × 107). In addition, in positive and negative bias temperature stress tests, the zinc tin oxide thin-film transistor with an amorphous indium gallium zinc oxide source/drain electrode shows almost equal stability compared to the zinc tin oxide thin-film transistor with an indium tin oxide source/drain electrode.
关键词： Zn-Sn-O (ZTO),In-Ga-Zn-O (IGZO) S/D electrode,thin-film transistors (TFT),vacuum rapid thermal annealing
更新于2025-09-23 15:19:57
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Synthesis of Nanostructured PLD AlN Films: XRD and Surface-Enhanced Raman Scattering Studies
摘要： Thin films of AlN on Si were fabricated by pulsed laser deposition in vacuum and in nitrogen ambient, and at laser repetition rate of 3 Hz or 10 Hz. The films were nanostructured according to the X-ray diffraction analysis and TEM imaging. Films deposited in vacuum were polycrystalline with hexagonal AlN phase and with columnar structure, while films deposited in nitrogen were predominantly amorphous with nanocrystallites inclusions. The Al-N phonon modes in the surface-enhanced Raman spectra were largely shifted due to stress in the films. Phonon mode of Al-O related to film surface oxidation is observed only for deposition at low pressures.
关键词： microstructure,nanostructured thin film,Transmission electron microscopy,pulsed laser deposition,Aluminium nitride,Raman spectroscopy,X-ray diffractometry
更新于2025-09-19 17:15:36
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Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications
摘要： The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec?1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.
关键词： tin oxide,thin-film transistor,aluminum doping,adhesive property,oxide semiconductor
更新于2025-09-19 17:15:36
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Performance analysis of PV panels based on different technologies after two years of outdoor exposure in Fukushima, Japan
摘要： Nominal values reported for PV Systems are measured at carefully-controlled test conditions. While being strictly standardized to achieve a good benchmarking capability for different, newly manufactured panels; these conditions hardly exist in real-life implementation sites. To add to the problem, highly varying climate, precipitation, scorching sun and freezing snow wear out these systems in the long run. Therefore, actual performance of any PV system is, inevitably, different than those reported under standard test conditions. In order to have a more accurate expectation of power generation over the lifetime of a system, it is important to know the impact of local conditions and the resilience of PV panels to them. To this end, several outdoor performance studies have been reported around the world and the literature is growing. This work reports the impact of Fukushima's weather, which is known to be windy in autumn and have heavy snowfall in the winter, on the installed PV systems. Also, numerous panels belonging to different PV technologies and manufacturers are installed side-by-side to compare the variation in their performances and, thus, benchmark their quality and resilience. To investigate possible impact of micro-climate, or local geographical conditions, two test sites in Fukushima Prefecture are utilized. Finally, a sample PV system calculation is presented to showcase the impacts of these findings on a PV system in planning and operation stages.
关键词： Outdoor degradation,Thin film tandem,Solar energy in Japan,Photovoltaic modules,CIGS,Single crystal silicon
更新于2025-09-19 17:15:36
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Sol-Gel Synthesis and Characterization of Ba1-xGdxTiO3+δ Thin Films on SiO2/Si Substrates Using Spin-Coating Technique
摘要： Ba1-xGdxTiO3+δ, at x = 0, 0.05, 0.1, 0.15, 0.2, (BGT) thin films have been fabricated on SiO2/Si substrate using sol-gel method. The microstructure and surface morphology of the fabricated films have been investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD results show that the fabricated films are crystalline with perovskite structure. There is a shifting of the preferred peak at 31.5° to a higher angle as the doping ratio increases suggesting a distortion lattice exists in the films, which could be due to the substitution of Gd3+ ions into Ba-site. The decreasing of lattice constants confirms the substitution of Gd3+ in BaTiO3 lattice structure. The microstrain and dislocation density are found to be increased with the increase of Gd3+ doping, which attributed to the reduction of lattice volume that due to the ionic size mismatch effect. The AFM results show decreasing trend in both average grain size and roughness parameters. Therefore, the microstructure and surface morphology of BGT samples is strongly dependent on the Gd3+ doping concentration that mainly due to the difference ionic radius substitution.
关键词： microstructure,thin film,barium titanate,sol-gel,gadolinium doping
更新于2025-09-19 17:15:36
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Light-Induced Shape Morphing of Thin Films
摘要： Shape transformation of thin two-dimensional sheets into three-dimensional structures using light is of great interest for remotely-controlled fabrication, surface modulation, and actuation. Over the last few decades, significant efforts have been made to develop materials systems incorporating photochemical or photothermal elements to drive deformation in response to illumination. However, the full extent of the interplay between chemistry, optics, and mechanics in these materials is poorly understood. In this Review, we introduce principles of shape morphing in these systems by considering the underlying physics of photo-induced stresses and how these have been used in recent literature. In addition, we provide a critical overview of the important design characteristics of both photochemical and photothermal system and offer our view on the open opportunities and challenges in this rapidly growing field.
关键词： soft materials,thin film mechanics,Photomechanics,polymers,light responsive materials,shape morphing,actuators
更新于2025-09-19 17:15:36
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Enhanced charge injection in 6, 13-bis(triisopropylsilylethylnyl)-pentacene field-effect transistors with a rhenium oxide buffer layer
摘要： We introduce a transition metal oxide, rhenium trioxide (ReO3), as a charge injection buffer layer for 6,13-bis(triisopropylsilylethylnyl)-pentacene (TIPS-pentacene) field-effect transistors (FETs). By inserting a ReO3 layer, a large energy barrier between silver source electrode and TIPS-pentacene layer was significantly reduced. While the TIPS-pentacene FETs showed low hole mobility (μh) of 0.25 cm2V?1s?1 and large threshold voltage (VTH) of ?25 V due to large contact resistance (RC) of 155 kΩ·cm, the TIPs-pentacene FETs with ReO3 decreased RC as low as 28 kΩ·cm. Thus, we can improve μh two times bigger (~ 0.46 cm2V?1s?1) and reduce VTH around 0 V. Together with these improved electrical characteristics, the TIPS-pentacene with ReO3 shows much stable operation under gate voltage bias stress condition. The shift of VTH and degradation of μh which were shown in the TIPS-pentacene FET without ReO3 is suppressed in the TIPS-pentacene FETs with ReO3 under both positive and negative bias condition.
关键词： ReO3,transistors,TIPS-pentacene,electrical property,thin-film,contact resistance,organic
更新于2025-09-19 17:15:36
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Biodegradable Materials for Organic Field-effect Transistors on a Paper Substrate
摘要： Paper-based pentacene organic thin-film transistors (OTFTs) with spin-coated gelatin (G) stacked gate dielectric layers, the Au/pentacene/G/G matrix-embedded iron (FeG)/Al/paper structure, were fabricated. The proposed composite-stacked bio-dielectric layer can be implemented using solutions with the degradable biomaterials. These materials enable a large-area printing of use-and-throw devices. Control devices (Au/pentacene/G/Al and Au/pentacene/FeG/Al structure) were also fabricated for comparison. High performance paper-based OTFT constructed from the stacked gate dielectric layer exhibited a carrier mobility of 8 cm2/Vs, on/off current ratio of approximately 103, subthreshold swing of 0.6 V/dec, and threshold voltage of ?1.4 V. These results are compatible to those OTFTs fabricated on other substrates. Therefore, the emerging biomaterial-based transistors on paper substrates may help in developing low-cost, environment-friendly devices.
关键词： paper,pentacene,gelatin,organic thin-film transistor (OTFT),solution process
更新于2025-09-19 17:15:36