- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Micro/nano-suction cup structure of silicone rubber fabricated by ArF excimer laser
摘要： Micro/nano-suction cups of silicone rubber, cylindrical swelling structures in micron size with a hole of hundreds nanometer diameter each, were fabricated by 193-nm ArF excimer laser-induced photodissociation of silicone rubber. To be periodically, silica glass microspheres of 2.5 μm diameter were aligned on silicone rubber via Al thin film during laser irradiation. The Al thin film underneath each microsphere was locally laser-ablated to enable a circular irradiation of subsequent laser pulses, then the exposed silicone rubber was photochemically swelled by the photodissociation of Si–O bonds of silicone rubber. Also, debris of aluminum surrounding the laser-ablated areas resulted in pushing microsphere up to adjust a focal point to the surface of silicone rubber to form a hole centered at each the swelled silicone. The fabricated structure showed clear superhydrophobic properties. Dependence of single pulse fluence of ArF excimer laser on the fabrication of micro/nano-suction cup structure was discussed, together with the variation of thickness of Al thin film from 10 to 100 nm. The use of the superhydrophobic silicone rubber we fabricated is expected as a kind of delivery system, toward holding a small object even in water by each micro/nano-suction cup structure.
关键词： Micro/nano-suction cup,Al thin film,ArF excimer laser,Superhydrophobic property,Silicone rubber
更新于2025-09-16 10:30:52
-
Plasma enhanced atomic layer deposition of plasmonic TiN ultrathin films using TDMATi and NH3
摘要： Transition metal nitrides, like titanium nitride (TiN), are promising alternative plasmonic materials. Here we demonstrate a low temperature plasma‐enhanced atomic layer deposition (PE‐ALD) of non‐stoichiometric TiN0.71 on lattice‐matched and ‐mismatched substrates. The TiN was found to be optically metallic for both thick (42 nm) and thin (11 nm) films on MgO and Si <100> substrates, with visible light plasmon resonances in the range of 550–650 nm. We also demonstrate that a hydrogen plasma post‐deposition treatment improves the metallic quality of the ultrathin films on both substrates, increasing the ε1 slope by 1.3 times on MgO and by 2 times on Si (100), to be similar to that of thicker, more metallic films. In addition, this post‐deposition was found to tune the plasmonic properties of the films, resulting in a blue‐shift in the plasmon resonance of 44 nm on a silicon substrate and 59 nm on MgO.
关键词： optical properties,plasmonics,atomic layer deposition (ALD),thin film,titanium nitride
更新于2025-09-16 10:30:52
-
Solar Cells Based on Cu(In, Ga)Se2 Thin-Film Layers
摘要： This paper presents the results of experimental studies of spectral, dark current–voltage and light load characteristics of the selenide–copper–gallium–indium (Cu(In, Ga)Se2) solar cell. Тhe main fundamental parameters of the photoactive semiconductor layer Cu(In, Ga)Se2, such as the band gap, the resistivity of the layer, the equilibrium majority–carrier concentration, the lifetime and the product μ nτn of nonequilibrium minority carriers from the spectral, photoelectric and dark current–voltage characteristics are determined. Based on an analysis of the light-load current–voltage characteristics at various solar radiation powers (50–1000 W/m2), the main parameters of the p–n junction were determined, as well as the nonideality factor and the magnitude of the reverse diode saturation current; a photogeneration mechanism was established in the studied solar radiation range, which had the character of a diffusion mechanism, where carrier recombination in the photoactive layer did not have a significant effect. We found that in conditions of real solar lighting (Рrad = 50–1000 W/m2), the output parameters of the solar cell – short-circuit current, open circuit voltage, the maximum output power increases with Рrad. The fill factor (FF) of the light-current–voltage characteristics has a maximum at Рrad ≈ 200 W/m2, and an efficiency has a maximum value at Рrad ≈ 600 W/m2. The observed dependences of FF and efficiency are explained by the dependence of the series (Rser) and shunt (Rsh) resistance of a solar cell on Prad. To maintain the efficiency of a solar cell based on thin-film layers Cu(In, Ga)Se2, equally high in conditions of increased radiation, as well as in conditions of low solar radiation, it is necessary that Rser decreases and Rsh does not change with Prad.
关键词： photoactive thin film layer,series resistance,solar cell,Cu(In, Ga)Se2,fill factor,short circuit current,solar radiation power,light current–voltage characteristics,efficiency,open circuit voltage,shunt resistance
更新于2025-09-16 10:30:52
-
Remarkable Improvement in Foldability of Polya??Si Thina??Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Polya??Si Thina??Film Transistor Used for Foldable Displays
摘要： Highly robust poly-Si thin-film transistor (TFT) on polyimide (PI) substrate using blue laser annealing (BLA) of amorphous silicon (a-Si) for lateral crystallization is demonstrated. Its foldability is compared with the conventional excimer laser annealing (ELA) poly-Si TFT on PI used for foldable displays exhibiting field-effect mobility of 85 cm2 (V s)-1. The BLA poly-Si TFT on PI exhibits the field-effect mobility, threshold voltage (VTH), and subthreshold swing of 153 cm2 (V s)-1, -2.7 V, and 0.2 V dec-1, respectively. Most important finding is the excellent foldability of BLA TFT compared with the ELA poly-Si TFTs on PI substrates. The VTH shift of BLA poly-Si TFT is ±0.1 V, which is much smaller than that (±2 V) of ELA TFT on PI upon 30 000 cycle folding. The defects are generated at the grain boundary region of ELA poly-Si during folding. However, BLA poly-Si has no protrusion in the poly-Si channel and thus no defect generation during folding. This leads to excellent foldability of BLA poly-Si on PI substrate.
关键词： grain boundary,polyimide substrates,protrusions,flexible low-temperature poly-Si thin-film transistors,blue laser annealing
更新于2025-09-16 10:30:52
-
Picosecond laser ablation and depth profile of Cu(In, Ga)Se2 thin film layer
摘要： Laser ablation based on picosecond laser was used to achieve the micro-analysis of Cu(In, Ga)Se2 (CIGS) thin film with the ablation crater diameter of 50 μm and the ablation crater central depth of 93 ± 13 nm. We achieved the depth profile of CIGS thin film with different laser shot number. The evolutions of spectral lines intensities of Ca from glass substrate and Ga and In from CIGS thin film layer, and intensity ratios of Ca/Ga and Ca/In could exhibit the change of the ablation volume, which could estimate the thin film thickness of single CIGS thin film layer. The average plasma temperature was calculated to be about 5243 ± 100 K, and the average electron density was calculated to be about 4.5×1016 cm?3. It is shown that our experimental setup is suitable to achieve a precise control and monitor the element compositions in each CIGS thin film layer in the research and in the production of CIGS solar cells.
关键词： Ablation morphology,Electron density,Cu(In, Ga)Se2 thin film,Picosecond laser induced breakdown spectroscopy,Plasma temperature
更新于2025-09-16 10:30:52
-
The effect of annealing conditions: temperature, time, ramping rate and atmosphere on nanocrystal Cu2ZnSnS4 (CZTS) thin film solar cell properties
摘要： Cu2ZnSnS4 (CZTS) nanoparticles were fabricated successfully using the hot injection method; CZTS films were deposited by spin coating of nanocrystal ink. The aim of this work is to study the effect of annealing parameters: temperature, time, ramping rate and atmosphere on CZTS thin film structure and optical properties. XRD, Raman Spectroscopy, SEM, EDX mapping are used to analyse the films and they demonstrate the increase in quality and improvement in the crystallinity of CZTS and the homogeneity of elements which is one of the important factors for CZTS thin film solar cells. The crystallinity, structure and chemical composition of CZTS thin films increased and improved under annealing in H2S+N2 atmosphere which demonstrated that annealing at 500 oC for 1 h with a ramping rate of 10 oC/min under H2S+N2 atmosphere is a suitable condition for the fabrication of CZTS thin films used in solar cell devices.
关键词： Annealing temperature,CZTS,Cu2ZnSnS4,Annealing time,Thin film solar PV,Annealing atmosphere,Annealing ramping rate
更新于2025-09-16 10:30:52
-
Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells
摘要： The photovoltaic properties of Cu2O-based heterojunction solar cells were improved using an n-type layer composed of thin films in a binary oxide semiconductor. This layer was prepared by a low-damage deposition method that applies a system for multi-chamber radio frequency (r.f.) power superimposed direct current (d.c.) magnetron sputtering. For an Al-doped ZnO (AZO)/n-ZnO/p-Cu2O heterojunction solar cell prepared using r.f. power superimposed d.c magnetron sputtering, we achieved the highest efficiency yet reported (3.22%) by optimizing sputtering conditions such as the substrate-target distance and the r.f.:d.c. power ratio. This value represents characteristics that exceed those of AZO/Cu2O solar cells having a similar structure based on r.f. power superimposed d.c magnetron sputtering.
关键词： ZnO,Oxide thin film,Cu2O,Magnetron sputtering,AZO,Solar cells
更新于2025-09-16 10:30:52
-
Synthesis of heavy fermion CeCoIn5 thin film via pulsed laser deposition
摘要： CeCoIn5 (Co115) thin films have been grown on Al2O3 (000l) substrates through the pulsed laser deposition (PLD). The films are grown mainly along the c-axis, with CeIn3 and In-related alloys. The rock-salt type grains are nucleated, where Co115 grains mixed with excess indium are evenly distributed over the substrate. The electrical resistivity of the films shows a Kondo coherence peak near 47 K and the zero-resistance superconducting state at 1.8 K, which is the first observation in the PLD grown thin films of Co115. The Rietveld refinement of the thin films shows that the c/a ratio (tetragonality) is suppressed to 1.6312 from 1.6374 of single crystals, which is consistent with the linear relationship between the superconducting transition temperature and tetragonality. The good agreement indicates that the PLD could provide an alternative route to tune the 2D character of the critical spin fluctuations to understand the superconducting pairing mechanism of Co115.
关键词： Metal thin film,CeCoIn5 thin film,Heavy fermions,Superconductivity,Pulsed laser deposition
更新于2025-09-12 10:27:22
-
Nanosecond laser scribing for see‐through CIGS thin film solar cells
摘要： Building‐integrated photovoltaic (BIPV), especially in a semitransparent and/or see‐through configuration, has attracted significant attention because of the extended surfaces available for the photovoltaic (PV) installation including roofs, facades, and windows. In this study, we examine the P4 scribing process for fabricating see‐through cells on a new Cu (In,Ga)Se2 (CIGS) architecture with indium tin oxide (ITO) bottom contact, using a nanosecond laser beam of 532‐nm wavelength illuminated from glass substrate side. Through parametric studies with the variations of laser beam spot size and pulse energy, we have identified that enlarged laser beam with the pulse energy near scribing threshold could suppress both damage in ITO and electrical shunt induced by molten CIGS. Scanning electron microscopy (SEM) and energy‐dispersive X‐ray spectroscopy (EDS) analyses unveil that the molten CIGS mediated shunt mechanism, wetting the scribing edge and forming Cu‐rich metallic phase. The P4 scribing process operated near threshold fluence of enlarged laser beam clearly suppressed unwanted shunt, also minimizing the fluctuation in the desired film removal trend. Thermal analysis supports that enlarged laser beam enables scribing at reduced CIGS‐ITO interface temperature assisted by buckling‐based film delamination mechanism and also suppresses CIGS melting at scribing edge and its neighborhood. See‐through cells fabricated for the areal fraction of approximately 15% using the optimal laser scribing parameters exhibited the short circuit current reduction rate of 16.8% enabled by the low shunt resistance reduction rate of approximately 8%. Further studies are underway to elucidate precise shunt‐related scribing mechanism on the basis of the cross‐sectional analyses and time‐resolved diagnostics and to fabricate the module level see‐through PV architectures.
关键词： nanosecond laser,laser scribing,CIGS thin film solar cell,see‐through solar cell
更新于2025-09-12 10:27:22
-
[IEEE 2019 IEEE 9th International Nanoelectronics Conferences (INEC) - Kuching, Malaysia (2019.7.3-2019.7.5)] 2019 IEEE 9th International Nanoelectronics Conferences (INEC) - ITO Islands as Floating Electrodes to Deposit Aligned Carbon Nanotubes for Photovoltaic Applications
摘要： Recently transparent conductive electrodes (TCEs) have attracted the interest of researchers due to their outstanding optical and electrical properties. Indium tin oxide (ITO) is an oxide material that combines the criteria of high conductance and transmittance. However, ITO is a non-flexible, brittle and expensive material. TCEs are commonly embedded in solar cells to perform high photon absorption and electron collection instantaneously. In this paper, an optimized TCE network is proposed to maintain TCEs’ conductivity and transparency and to improve their flexibility and ability to handle mechanical forces. The network is designed by aligning multi-walled carbon nanotubes (MWCNTs) on ITO speckled surface to form ITO-CNT through grid. The alignment mechanism is achieved by dielectrophoretic (DEP) force, where an electric field of 10V and 105 Hz is subjected to an ethanol/ MWCNT suspension to assemble the CNT across ITO’s floating electrodes.
关键词： Alignment,DEP,Thin film solar cell,TCEs,MWCNT
更新于2025-09-12 10:27:22