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Comparative Studies on the Efficiency, Reproducibility and Stability of Perovskite Solar Cells
摘要： In literature, many studies based on planar inverted structure using either CH3NH3PbI3 and CH3NH3PbI3-xClx perovskite absorbers have reported as high-efficiency solid-state perovskite solar cells. This study includes the comparison of photovoltaic characterizations, reproducibility and stability results of solar cells fabricated by using CH3NH3PbI3 and CH3NH3PbI3-xClx perovskite compounds. Herein, the results showed that CH3NH3PbI3 perovskite solar cells gave a lower photovoltaic performance as-fabricated when compared with CH3NH3PbI3-xClx perovskite solar cells. However, after 24 hours, CH3NH3PbI3 perovskite compound showed a higher photovoltaic performance and better time stability in inert atmosphere and more reproducible results.
关键词： reproducibility,Planar thin film photovoltaics,Perovskite solar cell,stability
更新于2025-09-12 10:27:22
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Review of the fundamental issues in new generation high efficiency perovskite solar cells
摘要： This is a mini review of the fundamental issues in producing high efficiency solar cells. We have raised many important issues that limit the power conversion efficiency, and introduced the solutions in particular to perovskite solar cell structures. We supposedly estimate very high efficiencies over detailed balance or Schockley-Quessier limit up to 50 %, having applications such as tandem cells, light concentration, inter-band activities with deep levels, photon upconversion and quantum dots together with some unique processing systems.
关键词： Spin Coating,Organic elektronics,Thin film,Perovskite solar cells
更新于2025-09-12 10:27:22
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Comprehensive analysis of blue diode laser-annealing of amorphous silicon films
摘要： The low temperature polycrystalline silicon (LTPS) method has proved to be a technical breakthrough, accomplishing semiconductor thin films with remarkable mobility for a range of high-performance displays, including liquid crystal display and organic light emitting diodes. However, utilizing a conventional excimer laser source for LTPS incurs high cost. In this paper, we demonstrate a comprehensive analysis of the crystallization mechanism of a-Si film (94 nm) and the thermal deformation of the glass substrate induced by Blue diode Laser Annealing (BLA). BLA provides high quality laterally grown crystals over 4 μm × 10 μm on glass substrates, which were examined by optical microscopy, scanning electron microscopy, and Raman spectroscopy. In addition, the permanent deformation introduced by the annealing process is numerically modeled, instantiating how to control the heat conduction from the thin film that affects the substrate. Our findings reveal that the permanent thermal deformation depth that can be obtained is comparable to the roughness of the silicon film for the optimum scanning speed and laser power. The combination of both experimental and numerical results elucidates the manifested physical mechanisms during the BLA process and provides the guidelines to improve the experimental parameters of this process.
关键词： Lateral grain growth,Glass deformation,Silicon thin film,Low Temperature Polycrystalline Silicon (LTPS),Blue diode laser
更新于2025-09-12 10:27:22
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Effect of deep UV laser treatment on silicon-doped Tin oxide thin film
摘要： In this paper, the effect of deep ultraviolet (UV) laser on physical and electrical properties of amorphous Silicon‐doped tin oxide (amorphous Si‐Sn‐O, a‐STO) thin films were studied. Surface morphology, thickness, crystallinity, and optical band gap of a‐STO thin films treated by laser were investigated. Results showed that the decrease of thickness and surface roughness of a‐STO thin films after deep UV laser treatment, and the films maintained an amorphous structure, which implied that the quality of a‐STO thin films were improved. The peak position of oxygen vacancy binding energy became lower; this is caused by an increase in oxygen vacancies resulting in a decrease in coordination number. And the oxygen vacancy content of the a‐STO thin films was increased after deep UV laser treatment. In addition, the optical band gap of a‐STO films was broaden after the deep UV laser treatment. It exploits a new application of deep UV laser in oxide semiconductor.
关键词： oxygen vacancy,amorphous STO thin film,optical band gap,deep ultraviolet laser
更新于2025-09-12 10:27:22
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Mechanistic insights into the phenomena of increasing capacity with cycle number: using pulsed-laser deposited MoO <sub/>2</sub> thin film electrodes
摘要： Lithium ion batteries typically lose capacity or energy storage density (i.e. capacity fading) over the course of extended cycling which can be problematic for applications and appears to be exaggerated when high current rates are used. However, in some cases fluctuations in capacity with cycle number and even increases in capacity with cycle number are noted with predominantly thin film based electrodes. Here we demonstrate the synthesis and in-depth characterisation of laser deposited MoO2 thin film anodes and its unconventional mechanism. A MoO2 electrode shows an initial capacity of 79 mA h g?1 which increases to capacities of 600 mA h g?1 at 15.8 A g?1 after 90 000 cycles. A maximum capacity of 1714 mA h g?1 was achieved in an electrode cycled at 1.5 A g?1 for over 3800 cycles, the highest recorded capacity in MoOx anodes to date. The most intriguing aspects of this work is the fact that capacity is shown to fluctuate and typically increase well above the theoretical capacity of MoO2. A combination of electrochemical cycling, X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, focused ion beam milling and transmission electron microscopy at various states of cycling is used to illustrate a proposed mechanism. The mechanism illustrated is based on exfoliation of layers of MoO2 off the pulsed laser deposition (PLD) grown MoO2 electrodes during cycling that creates additional surface area and easier access for Li-ions to both adsorb to the surface and insert/react with the host material. Further features in the capacity evolution are rationalised by this mechanism and methods to control the capacity evolution are detailed. These results present a rational explanation for when an electrode undergoes a substantial increase in capacity over its extended cycling life.
关键词： pulsed laser deposition,MoO2 thin film anodes,exfoliation mechanism,Lithium ion batteries,capacity increase
更新于2025-09-12 10:27:22
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Characterization of Cr/Ag metal thin films interaction with infra-red laser
摘要： Laser-metal interaction employed greater advantages to the performance of devices for electronics and optoelectronics devices. Silver (Ag) thin films were deposited onto silicon (Si) and glass substrates using direct current (DC) magnetron sputtering system. An under-layer, chromium (Cr) thin films that act as an adhesive layer were deposited on the glass substrate. Laser treatments on the samples were carried out at different laser energy under N2 ambient in a pressure cube. It is found that the electrical, optical and morphological properties improved after laser treatment process. Laser-treated Cr/Ag at 165 mJ shows a low electrical resistivity of 1.21 × 10-6 ?-cm. Optical reflectance and the transmittance increases from 1.675% and 1.636% to 7.256 % and 7.204 % respectively at 470 nm. Meanwhile, surface roughness has shown a value of 5 nm for the sample treated at a maximum laser energy.
关键词： silver,thin film,laser,DC magnetron sputtering,optoelectronic
更新于2025-09-12 10:27:22
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Effect of annealing temperature on silicon-based MoS <sub/>x</sub> thin film solar cells
摘要： A suitable annealing temperature was found by adopting the sol–gel method to prepare silicon-based molybdenum sulfide film heterojunction solar cells. As shown by the results, a change in the efficiency of the solar cells, which was attributed to the fact that as the annealing temperature rises, the degree of crystallization of the film increases continuously, the degree of order of the crystal particles goes up first and then goes down, and the temperature change affects the proportion of Mo in different valence states. By comparison, it was found that when the temperature reached 500 °C, the degree of order of the film was raised and the film was in the initial zone from the amorphous to the microcrystal phase change and the proportion of Mo 6+ was relatively large, increasing the conversion efficiency of the device power to 7.55% and laying a good basis for preparing high-performance solar batteries made in the two-dimensional materials. When the annealing temperature continues to rise, the intergranular defects increase, and the overall degree of order of the film decreases. Furthermore, the highly crystalline thin films and the improvement in the device efficiency can be controlled if we obtained the relationship between the annealing temperature and the layers of the two-dimensional materials.
关键词： annealing temperature,solar cells,crystallization,sol–gel method,silicon-based MoSx thin film
更新于2025-09-12 10:27:22
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ZnO@TiO2 Core Shell Nanorod Arrays with Tailored Structural, Electrical, and Optical Properties for Photovoltaic Application
摘要： ZnO has prominent electron transport and optical properties, beneficial for photovoltaic application, but its surface is prone to the formation of defects. To overcome this problem, we deposited nanostructured TiO2 thin film on ZnO nanorods to form a stable shell. ZnO nanorods synthesized by wet-chemistry are single crystals. Three different procedures for deposition of TiO2 were applied. The influence of preparation methods and parameters on the structure, morphology, electrical and optical properties were studied. Nanostructured TiO2 shells show different morphologies dependent on deposition methods: (1) separated nanoparticles (by pulsed laser deposition (PLD) in Ar), (2) a layer with nonhomogeneous thickness (by PLD in vacuum or DC reactive magnetron sputtering), and (3) a homogenous thin layer along the nanorods (by chemical deposition). Based on the structural study, we chose the preparation parameters to obtain an anatase structure of the TiO2 shell. Impedance spectroscopy shows pure electron conductivity that was considerably better in all the ZnO@TiO2 than in bare ZnO nanorods or TiO2 layers. The best conductivity among the studied samples and the lowest activation energy was observed for the sample with a chemically deposited TiO2 shell. Higher transparency in the visible part of spectrum was achieved for the sample with a homogenous TiO2 layer along the nanorods, then in the samples with a layer of varying thickness.
关键词： TiO2 thin film,optical properties,ZnO nanorods,chemical deposition,DC reactive magnetron sputtering,pulsed laser deposition,electrical properties,core–shell
更新于2025-09-12 10:27:22
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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
摘要： To serve as an electron transport layer (ETL) or a buffer layer for the third-generation solar cells, a compact and uniform gallium nitride (GaN) thin layer with suitable energy level is needed. Meanwhile, it is also meaningful to explore its low-temperature deposition especially on transparent electrodes. In this work, GaN thin films have been deposited on fluorine-doped tin oxide (FTO) glass substrate for the first time by plasma-enhanced atomic layer deposition (PEALD) technology. 280-300°C is identified as the optimized deposition temperature for forming a compact and uniform n-type GaN layer on FTO substrate. The 50-200 PEALD cycles of GaN layers show an amorphous structure, and their bandgap values ranging from 3.95 eV to 3.58 eV have been displayed. Interestingly, as the GaN thickness increases, Fermi level moves upward obviously along with a reduction of conduction band minimum (CBM) value as well as an increase of valance band maximum (VBM) value. The thickness-dependent band structure is preliminarily explained as the relaxation of compressive stress and increased carrier concentration for a thicker GaN layer. The above situation enables us to regulate the energy level of GaN layer via thickness control, and thus accelerates its future application in new generation solar cells.
关键词： photoelectric properties,FTO glass substrate,GaN thin film,plasma-enhanced atomic layer deposition
更新于2025-09-12 10:27:22
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Numerical study of Cs2TiX6 (X?=?Br?, I?, F? and Cl?) based perovskite solar cell using SCAPS-1D device simulation
摘要： The present work represents the study of numerical simulation of Cesium Titanium (IV) Halide thin film based lead-free Perovskite Solar Cells (PSCs) using Solar Cell Capacitance Simulator (SCAPS). For this study, an alternative inorganic material cell architecture CuSCN/Cs2TiX6/CdS/Si has been proposed, where X is halide like Br, I, F and Cl. The effects of variation in absorbing layer thickness and device working temperature on the solar cell performance were simulated through SCAPS simulator. This simple cell architecture has helped us to study and optimize the device parameters. The 1D optimization for the proposed lead-free Perovskite based solar cell resulted in optimized active layers thickness, device temperature and quantum efficiency for Cs2TiBr6, Cs2TiI6, Cs2TiF6 and Cs2TiCl6 active materials. The study resulted in optimized thickness of 1.0 μm, 1.5 μm, 1.5 μm and 1.5 μm for Cs2TiBr6, Cs2TiI6, Cs2TiF6 and Cs2TiCl6 active materials, respectively. The optimized device temperature was found to be at 80 °C for Cs2TiBr6, 60 °C for Cs2TiI6, 75 °C for Cs2TiF6 and 75 °C for Cs2TiCl6.
关键词： Solar cell,Perovskite,Thin film,Simulation,Optimization,SCAPS-1D
更新于2025-09-12 10:27:22