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High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication
摘要： We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10?4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.
关键词： excimer laser doping,4H-SiC,Al thin film,pn junction diode
更新于2025-09-12 10:27:22
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Island growth mode in pulsed laser deposited ferroelectric BaTiO <sub/>3</sub> thin films: The role of oxygen pressure during deposition
摘要： Pulsed laser deposition is widely used to grow BaTiO3 thin films. We investigated the influence of oxygen pressure during growth on the topography, microstructure, and roughness of ferroelectric epitaxial BaTiO3 thin films. It also presented an analysis of the epitaxial growth mode and defects throughout the film thickness using aberration-corrected transmission electron microscopy. Although ferroelastic (twin boundary) domain walls are absent, several misfit dislocations were observed and might be the primary cause of the observed island growth mode.
关键词： barium titanate,Ferroelectric thin film,epitaxial thin film,misfit strain,crystalline defects
更新于2025-09-11 14:15:04
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Pulsed laser deposition with rapid beam deflection by a galvanometer mirror scanner
摘要： A pulsed laser deposition system with rapid beam deflection (RBD-PLD) by a galvanometer mirror scanner has been developed for alternating ablation of multiple targets with a single laser instrument. In this system, the alternating deposition of different target materials is carried out by scanning the laser beam between the positionally fixed targets with a galvanometer mirror instead of mechanically switching the target positions on a fixed optical path of the laser beam as is done in conventional pulsed laser deposition (PLD) systems. Thus, the “wait” time required for switching target materials to be deposited, which typically takes several seconds in a conventional system, can be made as short as a few milliseconds. We demonstrate some of the advantages of this PLD system in several technologically important aspects of thin film synthesis: (1) fast fabrication of binary alloy films, (2) preparation of natural composition spread libraries, (3) effect of the target switching time on the deposition of volatile compounds, (4) control of the degree of mixing of two different materials in a film, and (5) efficient growth of compositionally graded thin films.
关键词： galvanometer mirror scanner,rapid beam deflection,composition spread libraries,volatile compounds,pulsed laser deposition,thin film synthesis,compositionally graded thin films,binary alloy films
更新于2025-09-11 14:15:04
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High-performance p-channel thin-film transistors with lightly doped n-type excimer-laser-crystallized germanium films
摘要： High-performance polycrystalline-germanium (poly-Ge) thin-film transistors (TFTs) fabricated with lightly doped Ge thin films by excimer laser crystallization (ELC) and counter doping (CD) have been demonstrated. High-quality n-type Ge thin films with a grain size as large as 1 μm were fabricated by ELC in the super lateral-growth regime and CD at a dose of 1 × 1013 cm?2 or higher. Consequently, a superior field-effect mobility of 271 cm2 V?1 s?1 and a high on/off current ratio of 2.7 × 103 have been obtained for p-channel Ge TFTs with the channel width and length of both 0.5 μm fabricated by ELC at 300 mJ/cm2 and CD at a dose of 1 × 1013 cm?2. The effects of ELC conditions and CD dose on the electrical characteristics of p-channel Ge TFTs were also investigated.
关键词： field-effect mobility,excimer laser crystallization,thin-film transistors,polycrystalline-germanium,counter doping
更新于2025-09-11 14:15:04
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Antimony‐Doped Tin Oxide as Transparent Back Contact in Cu <sub/>2</sub> ZnSnS <sub/>4</sub> Thin‐Film Solar Cells
摘要： Antimony-doped tin oxide (Sn2O3:Sb, ATO) is investigated as a transparent back contact for Cu2ZnSnS4 (CZTS) thin-film solar cells. The stability of the ATO under different anneal conditions and the effect from ATO on CZTS absorber growth are studied. It is found that ATO directly exposed to sulfurizing anneal atmosphere reacts with S, but when covered by CZTS, it does not deteriorate when annealed at T< 550 °C. The electrical properties of ATO are even found to improve when CZTS is annealed at T= 534 °C. At T= 580 °C, it is found that ATO reacts with S and degrades. Analysis shows repeatedly that ATO affects the absorber growth as large amounts of Sn-S secondary compounds are found on the absorber surfaces. Time-resolved anneal series show that these compounds form early during anneal and evaporate with time to leave pinholes behind. Device performance can be improved by addition of Na prior to annealing. The best CZTS device on ATO back contact herein has an efficiency of 2.6%. As compared with a reference on a Mo back contact, a similar open-circuit voltage and short-circuit current density are achieved, but a lower fill factor is measured.
关键词： antimony-doped tin oxides,sulfurization,thin-film solar cells,transparent back contacts,Cu2ZnSnS4
更新于2025-09-11 14:15:04
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Poly‐GeSn Junctionless Thin‐Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing
摘要： High-performance polycrystalline GeSn (poly-GeSn) junctionless thin-film transistors (JL-TFTs) are proposed and fabricated at low process temperatures. Poly-GeSn thin films with a Sn fraction of 4.8% are prepared using cosputtering and pulsed laser annealing (PLA) techniques. The ultra-rapid nonequilibrium thermodynamic process with 25 ns PLA renders a good crystal GeSn thin film at a low temperature. The ION/IOFF ratio increases by three orders of magnitude with GeSn channel thickness varying from 60 to 10 nm, suggesting that switch-off current is dominated by depletion width. A superior effective mobility of 54 cm2 V-1 s-1 is achieved for the JL-TFT with a 10 nm-thick GeSn film as a consequence of gate/channel interface passivation by oxygen plasma.
关键词： pulsed laser annealing,junctionless thin-film transistors,GeSn
更新于2025-09-11 14:15:04
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3.4: Applications of TFE mask‐less technology for foldable AMOLED displays
摘要： Thin-film encapsulation (TFE) for foldable AMOLED display is necessary to have good reliability and excellent bendability. TFE mask induces particles easily and crack occurs in thick TFE layer during panel bending. We developed TFE with Al2O3 layer for high water-proof and very thin thickness, satisfying the requirement of reliability and bendability. The Al2O3 layer in TFE structure was deposited by low temperature atomic layer deposition (ALD) method，and we realized TFE mask-less process through adapting dry-etch parameters for Al2O3 etch, finding that BCl3 has very excellent dry-etch selectivity between inorganic layer (SiOx/SiNx/SiOxNy) and Al2O3. Besides, we also attempted to make the organic layer of TFE acted as etch mask, and it proved to be feasible, indicating that all the TFE masks could be taken out effectively. Moreover, we proved good optic and reliability characteristics of AMOLED display with mask-less TFE structure.
关键词： Atomic Layer Deposition (ALD),mask-less,Thin-Film Encapsulation (TFE),AMOLED
更新于2025-09-11 14:15:04
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Structural and optical properties of nanoparticles of tetraphenyl Porphin cobalt (II) annealed thin films
摘要： optical constant were compared with the other porphyrin derivatives. X-ray diffraction, scanning electron microscope and infrared Spectrum have been used to investigate the structural characterization of CoTPP in crystallite size of CoTPP films, the annealing can modify the morphology of which expose to thermal annealing. The annealing effect on optical energy powder, as deposited and annealed films. The annealing effect on the Some optical constants of CoTPP were studied for as deposited and films electronic transition type is an indirect allowed transition. The values of thin films by controlling the aggregate densification of COTPP thin films. gap, dispersion parameters, imaginary and real parts of dielectric constant. The Organic semiconductors have many applications in organic electronics because of the growing need to some alternative with low cost instead of revolution [1]. Organic semiconductors have feature to conduct electricity and absorb light, these materials can easily to modify by chemical synthesis [2]. silicon, so organic semiconductors offering commercially viable technologies Microelectronics has been developed due to the new electronics
关键词： thin film-X ray-scanning electron microscope.optical constants
更新于2025-09-11 14:15:04
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Polarimetric Three-Dimensional Topological Insulators/Organics Thin Film Heterojunction Photodetectors
摘要： As a state of quantum matter with insulating bulk and gapless surface states, topological insulators (TIs) have huge potential in optoelectronic devices. On the other hand, polarization resolution photoelectric devices based on anisotropic materials have overwhelming advantages in practical applications. In this work, the 3D TIs Bi2Te3/organics thin film heterojunction polarimetric photodetectors with high anisotropic mobility ratio, fast response time, high responsivity, and EQE in broadband spectra are presented. At first, the maximum anisotropic mobility ratio of the Bi2Te3/organics thin film can reach 2.56, which proves that Bi2Te3 can serve as a sensitive material for manufacturing polarization photoelectric devices. Moreover, it is found that the device can exhibit a broad bandwidth and ultrahigh response photocurrent from visible to middle wave infrared spectra (405?3500 nm). The highest responsivity (Ri) of the device can still reach 1.93 AW?1 at 3500 nm. In addition, the ultrahigh external quantum efficiency is 4534% with a fast response time (1.42 ms). Excellent properties mentioned above indicate that TIs/organics heterojunction devices are suitable for manufacturing high-performance photoelectric devices in infrared region.
关键词： polarization resolved,inorganics/organics heterojunction,photodetector,Bi2Te3 thin film,MWIR photodetectors
更新于2025-09-11 14:15:04
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Spin-coated copper(I) thiocyanate as a hole transport layer for perovskite solar cells
摘要： Application of a low-cost and efficient p-type inorganic hole-transporting material, copper thiocyanate (CuSCN), on mesoporous n-i-p-configurated perovskite-based devices was conducted in this study. Diethylsulfide was chosen for the preparation of precursor solution in order to deposit CuSCN layer on perovskite without degrading it. Topographical, elemental, and electrical characterizations of spin-coated CuSCN layers were performed using XRD, AFM, SEM, XPS, UPS, and UV-Vis studies. A power conversion efficiency exceeding 11.02% with an open-circuit voltage of 0.83 V was succeeded in the perovskite solar cells under full sun illumination. Low-temperature solution process used for the deposition of CuSCN and a fast solvent removal method allowed the creation of compact, highly conformal CuSCN layers that facilitate rapid carrier extraction and collection. The differences in series and recombination resistances for CuSCN-free and CuSCN-containing cells were also determined using impedance spectroscopy (IS) analysis. Moreover, the effect of TiO2 layer thickness on the cell performance was studied where these TiO2 layers were used not only for electron extraction and transportation, but also as hole blocking layer in perovskite solar cells. The impedance spectroscopy results were also consistent with the differently configurated cell performances. This work shows a well-defined n-i-p perovskite cell with optimized layers which utilize low-cost and abundant materials for photovoltaic applications.
关键词： Hole transport material,Perovskite solar cells,N-i-p mesoporous structure,Copper thiocyanide thin film
更新于2025-09-11 14:15:04