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Role of hydrazine in the enhanced growth of zinc sulfide thin films using chemical bath deposition for Cu(In,Ga)Se2 solar cell application
摘要： We investigated the hydrazine effect on the physical characteristics of zinc sulfide (ZnS) thin films on both the soda-lime glass substrate and the Cu(In,Ga)Se2 (CIGS) absorber layer as a function of its relative content rc with respect to ammonia as well as the deposition time td in the chemical bath deposition. As the rc varied from 0 to 1.39, all the deposited ZnS films using hydrazine as a secondary complexing agent showed nearly identical characteristics of amorphous structure with the composition of [S/(S + O)] ~ 0.32 and the direct energy bandgap of Eg = 3.54–3.75 eV. However, they exhibited a strong dependence of light transmission on the longer deposition times td (≥70 min), due to the enhancement of the areal density of in-plane grains. By applying the ZnS buffer on top of the CIGS, the heterojunction device showed the best solar cell performance with η = 12.03%, Voc = 0.549 V, Jsc = 32.92 mA/cm2, FF = 66.7% from the ZnS buffer grown at rc = 0.28 and td = 30 min. When compared to only ammonia, the relative hydrazine was found to play a key role in the deposition of ZnS to expedite the in-plane grain growth by 6 times accompanied both with a reduction of in-plane grain size and a denser packing density.
关键词： CIGS solar cell,ZnS thin film,Chemical bath deposition,Hydrazine
更新于2025-09-11 14:15:04
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Scientific complications and controversies noted in the field of CdS/CdTe thin film solar cells and the way forward for further development
摘要： Cadmium telluride-based solar cell is the most successfully commercialised thin film solar cell today. The laboratory-scale small devices have achieved ~ 22%, and commercial solar panels have reached ~ 18% conversion efficiencies. However, there are various technical complications and some notable scientific contradictions that appear in the scientific literature published since the early 1970s. This review paper discusses some of these major complications and controversies in order to focus future research on issues of material growth and characterisation, post-growth processing, device architectures and interpretation of the results. Although CdTe can be grown using more than 14 different growth techniques, successful commercialisation has been taken place using close-space sublimation and electrodeposition techniques only. The experimental results presented in this review are mainly based on electrodeposition. Historical trends of research and commercial successes have also been discussed compared to the timeline of novel breakthroughs in this field. Deeper understanding of these issues may lead to further increase in conversion efficiencies of this solar cell. Some novel ideas for further development of thin film solar cells are also discussed towards the end of this paper.
关键词： Scientific complications,CdS/CdTe thin film solar cells,Development,Controversies
更新于2025-09-11 14:15:04
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One-step P2 scribing of organometal halide perovskite solar cells by picosecond laser of visible wavelength
摘要： Perovskite solar cells (PSC) have attracted attention by its unprecedented rise in device efficiency. However, the PSCs were mostly tested for the unit cell of small area, and it is important to upscale to solar modules. Laser scribing has great potential to this end. However, the key challenge identified in one-step P2 laser scribing is to remove film stack including the hole block layer (HBL) without damaging transparent conducting oxide (TCO) based bottom contact and thus to provide interconnecting paths with minimized contact resistance. In this study, we evaluate one-step P2 scribing performance of picosecond laser of 532 nm wavelength for mesoscopic perovskite architecture with the c-TiO2 as the HBL and fluorine doped tin oxide (FTO) as bottom contact. Despite anticipated challenge of low absorption selectivity, c-TiO2 layer could be efficiently removed without FTO damage over wide processing window enabling a self-terminating mechanism. Detailed parametric studies elucidate relevant scribing mechanisms such as layer-by-layer ablation mechanism or lift-off mechanism depending laser illumination direction. It is also revealed that the removal of c-TiO2 is triggered by ablation of upper layers, in particular, the mesoporous TiO2. Module level test is under way in conjunction with investigation of further scribing mechanisms.
关键词： picosecond laser,P2 scribing,laser scribing,Perovskite thin film solar cell
更新于2025-09-11 14:15:04
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Enhanced Hybridization and Nanopatterning via Heated Liquid-Phase Infiltration into Self-Assembled Block Copolymer Thin Films
摘要： Organic-inorganic hybrids featuring tunable material properties can be readily generated by applying vapor- or liquid-phase infiltration (VPI or LPI) of inorganic materials into organic templates, with resulting properties controlled by type and quantity of infiltrated inorganics. While LPI offers more diverse choices of infiltratable elements, it tends to yield smaller infiltration amount than VPI, but the attempt to address the issue has been rarely reported. Here, we demonstrate facile temperature-enhanced LPI method to control and drastically increase the quantity and kinetics of Pt infiltration into self-assembled polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer (BCP) thin films. By applying LPI at mildly elevated temperatures (40 – 80 °C), we showcase controllable optical functionality of hybrid BCP films along with conductive three-dimensional (3D) inorganic nanostructures. Structural analysis reveals enhanced metal loading into BCP matrix at higher LPI temperatures, suggesting multiple metal ion infiltration per monomer of P2VP. Combining temperature-enhanced LPI with hierarchical multilayer BCP self-assembly, we generate BCP-metal hybrid optical coatings featuring tunable antireflective properties as well as scalable conductive 3D Pt nanomesh structures. Enhanced material infiltration and control by temperature-enhanced LPI not only enables tunability of organic-inorganic hybrid nanostructure and properties but also expands the application of BCPs for generating uniquely functional inorganic nanostructures.
关键词： self-assembled block copolymers,hybrid thin film,optical coating,Pt nanomesh,Liquid-phase infiltration
更新于2025-09-11 14:15:04
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The phase optimization, optical and electrical properties of kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film prepared by single target RF magnetron sputtering technique for solar cell application.
摘要： Cu2ZnSnS4 (CZTS) thin film was prepared by RF sputtering technique from a single quaternary target by optimizing RF power, in-situ substrate temperature and post deposition annealing temperature. The single phase formation of crystalline CZTS thin film has been verified at a particular optimized condition by characterizing through X-ray diffraction, Raman selected area electron diffraction study. The surface properties such as particle size, shape and roughness and elemental composition of amorphous and crystalline phase of CZTS studied by atomic force microscope, scanning electron microscope and energy dispersive analysis of x-rays. The optical absorption and photoluminescence studies of post-deposition annealed film prove the defect free and single phase CZTS formation. The band gap calculation for crystalline CZTS showed band gap of 1.49eV calculated from the Tauc plot. The electrical properties of optimized CZTS thin film has been studied from Hall effect measurement showing P-type conductivity with better carrier concentration and Hall mobility.
关键词： Optical properties,Electrical properties,Phase optimization without post sulfurization process,Solar cell material,CZTS thin film,Single target RF magnetron sputtering
更新于2025-09-11 14:15:04
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Numerical Simulation of Single Junction InGaN Solar Cell by SCAPS
摘要： The performance of the InGaN single-junction thin film solar cells has been analyzed numerically employing the Solar Cell Capacitance Simulator (SCAPS-1D). The electrical properties and the photovoltaic performance of the InGaN solar cells were studied by changing the doping concentrations and the bandgap energy along with each layer, i.e. n- and p- InGaN layers. The results reveal an optimum efficiency of the InGaN solar cell of ~ 15.32 % at a band gap value of 1.32 eV. It has been observed that lowering the doping concentration NA leads to an improvement of the short circuit current density (Jsc) (34 mA/cm2 at NA of 1016 cm?3). This might be attributed to the increase of the carrier mobility and hence an enhancement in the minority carrier diffusion length leading to a better collection efficiency. Additionally, the results show that increasing the front layer thickness of the InGaN leads to an increase in the Jsc and to the conversion efficiency (????). This has been referred to the increase in the photogenerated current, as well as to the less surface recombination rate.
关键词： Thin film solar cell,SCAPS,InGaN
更新于2025-09-11 14:15:04
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Numerical Optimization of 0.5‐μm‐thick Cu (In1-xGax) Se2 Solar Cell
摘要： This paper presents a numerical simulation of 2D ultra-thin Cu (In1-xGax) Se2 solar cell under drift-diffusion transport across heterojunction interfaces. The validation of the CIGS model is performed by matching the electrical characteristics of the experimental and simulation results. The surface recombination velocity of CdS/CIGS heterojunction interface and element composition Ga/(In+Ga) ratio effect on the optical properties and electrical performances of CIGS absorber are investigated. The thickness dependence and carrier concentration of the semiconductor layers on the cell performance are investigated. The nanostructured Ag, Au, or Cu back mirror is used to replace conventional Mo back contact to improve light absorption in the ultra-thin CIGS layer. Best power conversion efficiency of 21.74 % has been obtained with a thinner absorber of about 0.5‐ μm‐ thick under AM1.5 illumination condition, 300K.
关键词： Efficiency,Ultra-thin film solar cells,Heterostructure,Nanostructured back mirror,TCAD
更新于2025-09-11 14:15:04
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High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process
摘要： Zinc-Tin-Oxide (ZTO) thin films were fabricated using a simple and eco-friendly sol-gel method and their application in thin film transistors (TFTs) was investigated. Annealing temperature has a crucial influence on the structure and electrical properties of sol-gel ZTO thin films. The ZTO thin films annealed at 300-600 (cid:1) revealed smooth and uniform surfaces with amorphous state, in addition, a high optical transparency over 90% of the ZTO films in the visible range was obtained. The electrical performance of ZTO TFTs showed obvious dependence on annealing temperature. The ZTO TFTs annealed at 500 (cid:1) showed a high carrier mobility of 5.9 cm2/Vs, high on/off current ratio (Ion/off) of 106-107, and threshold voltage (Vth) of 1.03V. To demonstrate the application of sol-gel ZTO films in low-power display fields, we also fabricated ZTO TFTs with a solution-processed high-permittivity (high-k) ZrTiOx dielectric layer. The ZTO/ ZrTiOx TFTs showed high mobility of 17.9 cm2/Vs and Ion/off of 105-106 at a low operation voltage of 3 V, indicating that Indium-free ZTO thin films would be potential candidates for low cost, high performance oxide TFT devices.
关键词： oxide semiconductor,sol-gel process,thin-film transistor
更新于2025-09-11 14:15:04
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Broadening the IF band of a THz hot electron bolometer mixer by using a magnetic thin film
摘要： To expand the intermediate frequency (IF) band and improve the sensitivity of a hot electron bolometer mixer (HEBM), we proposed and examined a new HEBM structure using a magnetic thin film. We found that it was possible to suppress the superconductivity of the 5-nm thick niobium nitride (NbN) thin film by the addition of a 1.8-nm thick nickel (Ni) thin film. It was also confirmed that the superconductivity disappeared in the Au (70 nm)/Ni (1.8 nm)/NbN (5 nm) tri-layer for forming the electrodes of the HEBM. By using the magnetic thin film for the electrodes, we suggested that the superconductivity of the HEBM strip would be affected and that hot spots would form near the electrodes. This approach is effective for shortening the hot electron drift length and will lead to the expansion of the IF bandwidth. We think that the new structure lowers the required local oscillator (LO) power and improves the HEBM sensitivity by suppressing the proximity effect under the electrode. The IF bandwidth of the fabricated Ni-HEBMs was evaluated at 1.9 THz. We confirmed that the IF bandwidth expands, and the evaluated bandwidths were in the range of 5.1–5.7 GHz at 4 K. Ni-HEBMs with 0.1 μm strip length were also fabricated and evaluated. The IF bandwidth was about 6.9 GHz at 4 K.
关键词： hot electron bolometer mixer,THz,magnetic thin film,superconductivity,intermediate frequency band
更新于2025-09-11 14:15:04
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Metal Capping on Silicon Indium Zinc Oxide Semiconductor for High Performance Thin Film Transistors Processed at 150 °C
摘要： We fabricated amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) by RF sputtering at the low processing temperature of 150 °C. Metal capping (MC) structure on TFTs showed enhanced performance. Even at low annealing temperature, the field-effect mobility (μFE) showed 21.4 cm2/V s, and Vth shift was only 1.3 V. We attribute the enhancement of mobility to the metal capping layer, which effectively prevents the ambient effect of hydrogen and water vapor.
关键词： SiInZnO,Metal Capping,Thin Film Transistors,Oxide Semiconductor
更新于2025-09-11 14:15:04