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Optimization of back ITO layer as the sandwiched reflector for exploiting longer wavelength lights in thin and flexible (30?μm) single junction c-Si solar cells
摘要： Fabrication of thin and ?exible crystalline silicon solar cells based on single junction concept is reported with detailed investigations on each step of the production ?ow chain. With the aim of minimizing material use/wastage as per the international technology roadmap for photovoltaic (ITRPV), which is also directly related to the device cost, e?orts have been made to introduce thin (~30 μm) c-Si wafers instead of a conventional 180 μm wafer to fabricate single-junction solar cells. Due to the introduction of thin (~30 μm) c-Si wafer, the device becomes ?exible, which is also an additional bene?t towards the development of future roll-to-roll electronics. In order to address better carrier collection in thin silicon as well as light management, measures have been taken by introducing an indium tin oxide (ITO) layer both on top and at the bottom. The in?uence of this ITO layer along with back Al contact toward the cell e?ciency has been discussed. X-ray di?raction (XRD) analysis has been carried out to investigate microstrain and dislocation density related changes in the thin wafer, which are known to have in?uence on the photoconversion e?ciency. Under 1 Sun illumination, current – voltage characteristics and external quantum e?ciency were measured and found to be promising.
关键词： Sandwiched back ITO layer,Theoretical validation,Single junction,Thin silicon solar cells,Monocrystalline Si
更新于2025-09-16 10:30:52
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Performance of thin silicon solar cells with a quasi-monocrystalline porous silicon layer on the rear side
摘要： The present study employs porous silicon (PS) or quasi-monocrystalline porous silicon (QMPS) as a reflector material on the rear side. It presents an analytical model that simulates the performance of n+–p–p+ thin silicon solar cell with a QMPS layer on the rear side. The development of the model involves the formulation of a complete set of equations for the photo-current density that is then solved analytically in the base region, including the photocurrent generated under the effect of the light reflected by QMPS layer. This also takes the contribution of the back p+-region (back surface field) to the generated photocurrent into consideration. The enhancements brought by the thin film QMPS with regard to photovoltaic (PV) parameters are then investigated and compared to those brought by the conventional silicon solar cell. Moreover, the effect of the QMPS layer on the current–voltage characteristics J–V and the internal quantum efficiency (IQE) of thin silicon solar cells are simulated by means of AFORS-HET software. These simulations show that the improvement of the PV parameters is due to an increase in the transport parameters of minority carriers in the p-region.
关键词： porous silicon,thin silicon solar cells,quasi-monocrystalline porous silicon,photovoltaic parameters,AFORS-HET software
更新于2025-09-12 10:27:22